p‐Type Optoelectronic and Transparent Conducting Oxide Properties of Delafossite CuAl1/2Fe1/2O2

CuAl_1/2Fe_1/2O₂ delafossite was prepared using a solid‐state reaction method to investigate its optical and electronic transport properties. CuAl_1/2Fe_1/2O₂ formed a hexagonal delafossite structure with an Rm space group. The positive Seebeck coefficient and the direct optical gap of 3.6 eV confirmed that the CuAl_1/2Fe_1/2O₂ delafossite in a p‐type transparent conducting oxide. The fluorescence emission at 390 nm (green emission) confirmed that CuAl_1/2Fe_1/2O₂ has a direct transition band gap. Thermogravimetric analysis indicated a weight loss of 1.2%, caused by the intercalation of O atoms, which produced hole carriers from the different ionic radii at the B sites. The electric conductivity at room temperature was thermally activated, as predicted by the small‐polaron hopping mechanism, with an activation energy of 75 meV and a charge transport energy of 61 meV. CuAl_1/2Fe_1/2O₂ delafossite exhibited p‐type optoelectronic behavior and is a transparent conducting oxide, which may be crucial in the p‐type photonic and electrode industries.     

Impact of high-κ dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory

A methodology to simulate memory structures with metal nanocrystal islands embedded as floating gate in a high-κ dielectric material for simultaneous enhancement of programming speed and retention time is presented. The computational concept is based on a model for charge transport in nano-scaled structures presented earlier, where quantum mechanical tunneling is defined through the wave impedance that is analogous to the transmission line theory. The effects of substrate-tunnel dielectric conduction band offset and metal work function on the tunneling current that determines the programming speed and retention time is demonstrated. Simulation results confirm that a high-κ dielectric material can increase programming current due to its lower conduction band offset with the substrate and also can be effectively integrated with suitable embedded metal nanocrystals having high work function for efficient data retention. A nano-memory cell designed with silver (Ag) nanocrystals embedded in Al₂O₃ has been compared with similar structure consisting of Si nanocrystals in SiO₂ to validate the concept.     

Fuzzy logic control of an active power line conditioner

Fuzzy logic and active power line conditioners (APLC) are two tools that are being increasingly applied to power quality problems. In this paper, a switch-mode APLC that uses fuzzy logic to control the semiconductor switches is described. Frequency-domain analysis is used to determine the desired compensation current, and a rule-based piecewise-linear fuzzy proportional-integral controller (FPIC) provides the appropriate switching pattern of the APLC to generate the actual compensation current. MATLAB simulations and experimental measurements on a low-power (700 VA), digital signal processor-based, hardware prototype show that the APLC produces excellent results despite the use of a relatively low switching frequency, which is necessary to minimize semiconductor switching losses. The simulations and measurements are in good agreement and show that the APLC/FPIC system can significantly improve line current total harmonic distortion and power factor during both steady-state and transient operating conditions.