Formation and Properties of an Oxide Film on an Si3N4Surface under Thermal Oxidation

The formation mechanism, composition, and properties of an oxide film that grows on an Si₃N₄ mask during the LOCOS process are studied experimentally. The effect of the HF etching of the mask oxide film on the profile of the bird's beak is investigated for different etching conditions.     

Testing the electromigration resistance of Al metallization patterns by electrical-resistance measurement

The results are presented of an experimental evaluation of electromigration resistance for two types of Al metallization pattern used in the ICs of the 1554TBM and 1594T series. The experimental procedure is based on electrical-resistance measurements. Gamma-percent lifetime is calculated.     

Improved multistep method of ion implantation into silicon for IC manufacture

This paper reports on an experimental evaluation of an improved multistep method for ion implantation in the case of boron-doped silicon. The new method is compared with the standard one in terms of the electrical performance of test devices (vertical npn and horizontal pnp bipolar transistors and diodes) and chip yield.