全文获取类型
收费全文 | 90篇 |
免费 | 0篇 |
专业分类
化学工业 | 7篇 |
机械仪表 | 5篇 |
矿业工程 | 2篇 |
石油天然气 | 5篇 |
无线电 | 41篇 |
一般工业技术 | 25篇 |
冶金工业 | 2篇 |
原子能技术 | 3篇 |
出版年
2020年 | 4篇 |
2019年 | 4篇 |
2018年 | 3篇 |
2017年 | 1篇 |
2016年 | 4篇 |
2015年 | 2篇 |
2014年 | 2篇 |
2013年 | 1篇 |
2012年 | 2篇 |
2011年 | 3篇 |
2009年 | 7篇 |
2007年 | 1篇 |
2006年 | 1篇 |
2005年 | 2篇 |
2004年 | 2篇 |
2003年 | 1篇 |
2002年 | 2篇 |
2001年 | 2篇 |
2000年 | 3篇 |
1999年 | 3篇 |
1998年 | 5篇 |
1997年 | 1篇 |
1995年 | 2篇 |
1993年 | 1篇 |
1992年 | 1篇 |
1988年 | 2篇 |
1986年 | 3篇 |
1984年 | 2篇 |
1983年 | 3篇 |
1982年 | 3篇 |
1981年 | 1篇 |
1980年 | 3篇 |
1979年 | 1篇 |
1978年 | 1篇 |
1977年 | 3篇 |
1976年 | 1篇 |
1974年 | 1篇 |
1970年 | 2篇 |
1969年 | 1篇 |
1968年 | 2篇 |
1958年 | 1篇 |
排序方式: 共有90条查询结果,搜索用时 93 毫秒
1.
M. O. Petrushkov M. A. Putyato I. B. Chistokhin B. R. Semyagin E. A. Emel’yanov M. Yu. Esin T. A. Gavrilova A. V. Vasev V. V. Preobrazhenskii 《Technical Physics Letters》2018,44(7):612-614
An original technology of zinc diffusion into InP via a narrow gap is described, which allows reproducible formation of p–n junctions with preset depth of doping and retained surface morphology of the doped layers. Using the proposed method, desired charge carrier distribution profiles in Zn-doped InP layers were obtained. It has been experimentally confirmed that the method of cross-sectional scanning electron microscopy allows to precision measure of the zinc diffusion depth. 相似文献
2.
3.
P. N. Brunkov A. A. Gutkin A. K. Moiseenko Yu. G. Musikhin V. V. Chaldyshev N. N. Cherkashin S. G. Konnikov V. V. Preobrazhenskii M. A. Putyato B. R. Semyagin 《Semiconductors》2004,38(4):387-392
Electron traps in GaAs grown by MBE at temperatures of 200–300°C (LT-GaAs) were studied. Capacitance deep level transient
spectroscopy (DLTS) was used to study the Schottky barrier on n-GaAs, whose space-charge region contained a built-in LT-GaAs layer ∼0.1 μm thick. The size of arsenic clusters formed in
LT-GaAs on annealing at 580°C depended on the growth temperature. Two new types of electron traps were found in LT-GaAs layers
grown at 200°C and containing As clusters 6–8 nm in diameter. The activation energy of thermal electron emission from these
traps was 0.47 and 0.59 eV, and their concentration was ∼1017 cm−3, which is comparable with the concentration of As clusters determined by transmission electron microscopy. In LT-GaAs samples
that were grown at 300°C and contained no arsenic clusters, the activation energy of traps was 0.61 eV. The interrelation
between these electron levels and the system of As clusters and point defects in LT-GaAs is discussed.
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 4, 2004, pp. 401–406.
Original Russian Text Copyright ? 2004 by Brunkov, Gutkin, Moiseenko, Musikhin, Chaldyshev, Cherkashin, Konnikov, Preobrazhenskii,
Putyato, Semyagin. 相似文献
4.
I. L. Drichko A. M. D’yakonov I. Yu. Smirnov Yu. M. Gal’perin V. V. Preobrazhenskii A. I. Toropov 《Semiconductors》2004,38(6):702-711
The complex high-frequency conductivity of GaAs/Al0.3Ga0.7As heterostructures that are δ-doped and modulation-doped with silicon was investigated by acoustic methods under conditions of the integer quantum Hall effect. Both the real (σ1) and imaginary (σ2) parts of the complex conductivity σ(ω, H)=σi?iσ2 were determined from the dependences of the absorption and velocity of surface acoustic waves on magnetic field. It is shown that, in the heterostructures with electron density ns=(1.3–7)×1011 cm?2 and mobility μ=(1–2)×105 cm2/(V s), the high-frequency conductivity near the centers of the Hall plateau is due to electron hopping between localized states. It is established that, with filling numbers 2 and 4, the conductivity of the Al0.3Ga0.7As:Si layer efficiently shunts the high-frequency hopping conductivity of the two-dimensional interface layer. A method of separating the contributions of the interface and Al0.3Ga0.7As:Si layers to the hopping conductivity σ(ω, H) is developed. The localization length of electrons in the interface layer is determined on the basis of the nearest neighbor hopping model. It is shown that, near the centers of the Hall plateau, both σ(ω, H) and ns depend on the cooling rate of a GaAs/Al0.3Ga0.7As sample. As a result, the sample “remembers” the cooling conditions. Infrared light and static strain also change both σ(ω, H) and ns. We attribute this behavior to the presence of two-electron defects (so-called DX? centers) in the Al0.3Ga0.7As:Si layer. 相似文献
5.
I. A. Bobrovnikova M. D. Vilisova I. V. Ivonin L. G. Lavrent’eva V. V. Preobrazhenskii M. A. Putyato B. R. Semyagin S. V. Subach S. E. Toropov 《Semiconductors》2003,37(9):1047-1052
The effect of dopant concentration and growth-surface crystallographic orientation on the incorporation of Si into Ga and As sublattices was investigated during GaAs molecular-beam epitaxy. The epitaxial layers (epilayers) were grown on GaAs substrates with (100), 2°(100), 4°(100), and 8°(100) orientations at a temperature of 520°C and with (111)A, 2°(111)A, 2°(111)A, 5°(111)A, 6°(111)A, and 8°(111)A (where A = Ga) orientations at a temperature of 480°C. The Sidopant concentration was varied within 1017–1019 cm?3. Through electrical and photoluminescent methods of investigation, the Si impurity was found to occur at the sites of both GaAs-layer sublattices not only as simple donors and acceptors (SiGa and SiAs), but also as SiGa-SiAs, SiGa-VGa, and SiAs-VAs complexes. The concentration of Si impurity in various forms depends on the doping level of the layers and on the growth-surface orientation. Amphoteric properties of Si manifest themselves more prominently on the (111)A face than on the (100) one. It is shown that impurity defects form at the stage of layer crystallization and depend on the growth-surface structure. 相似文献
6.
7.
8.
9.
E. A. Emel’yanov D. F. Feklin A. V. Vasev M. A. Putyato B. R. Semyagin A. P. Vasilenko O. P. Pchelyakov V. V. Preobrazhenskii 《Optoelectronics, Instrumentation and Data Processing》2011,47(5):452-458
The interaction of the GaSb(001) surface with fluxes of As2, As4, and Sb4 molecules is studied using reflection high-energy electron diffraction. It is shown that As2 molecules interact with a GaSb surface predominantly by an exchange mechanism, and As4 molecules by the vacancy mechanism. It is established that for the reproducible generation of In-Sb heterointerfaces in InAs/GaSb
superlattices, one needs to use a flux of As4 molecules rather than As2 molecules. 相似文献
10.
V. V. Chaldyshev A. E. Kunitsyn V. V. Tret’yakov N. N. Faleev V. V. Preobrazhenskii M. A. Putyato B. R. Semyagin 《Semiconductors》1998,32(7):692-695
X-ray spectral microanalysis, optical transmission measurements at near-infrared wavelengths, and x-ray diffractometry are
used to show that the isovalent indium doping of gallium arsenide during molecular-beam epitaxy at low temperatures leads
to an increase in the concentration of excess arsenic trapped in the growing layer.
Fiz. Tekh. Poluprovodn. 32, 778–781 (July 1998) 相似文献