Effect of inhomogeneous line broadening on gain and differential gain of quantum dot lasers

Detailed theoretical analysis of the size fluctuation in InAs-GaAs quantum dot (QD) lasers is presented. Analytical expressions for the inhomogeneous line broadening and the optical gain are derived for a Gaussian size fluctuation distribution. The effect of size fluctuations on the QD carrier density, modal gain, and differential gain is studied. Red shifts in the gain peak is observed when size fluctuations increases. The energy detuning between the gain peak and the differential gain peak for a pyramidal quantum dot system having an average base length of 130 /spl Aring/ and standard deviation of 7 /spl Aring/ is about 12 meV.     

A new physical model of the light amplifying optical switch (LAGS)

A new physical model of determining the static I-V curve of the light amplifying optical switch (LAOS) is derived. The model is based on deriving the currents of the HPT and the feedback current of the LAOS. The feedback currents for optical and/or electrical feedback are determined by solving the continuity equation in the collector and the base of the HPT. A negative resistance region in the I-V curve is obtained and controlled by varying the feedback coefficient of the device and the Early effect coefficient. The main factors affecting the negative resistance region are the feedback coefficient, Early effect, the recombination currents in the emitter-base space-charge region, and the ratio of the collector to base doping. The switching voltage of the device is also calculated for different parameters     

Novel Closed-Form Model for Multiple-State Quantum-Dot Semiconductor Optical Amplifiers

Novel closed-form model for multiple-state quantum-dot semiconductor optical amplifiers (QD-SOAs) is derived. The model takes into account the effect of the ground state, excited state and the wetting layer. The model is simple, accurate and exhibits negligible computational time compared with numerical simulation. In addition, the derived model is valid for arbitrary applied current and input photon density and is interesting for device design and optimization. Analytical expressions for the optical gain, effective saturation density, maximum output density and the transparency current are also derived. Our model revealed that the effective saturation density of QD-SOAs strongly depends on the photon density and the applied current.     

Theory of four-wave mixing wavelength conversion in quantum dot semiconductor optical amplifiers

Detailed theoretical analysis of four-wave mixing (FWM) wavelength conversion in quantum dot semiconductor optical amplifier (QD-SOA) is presented. The model takes into account the effect of the multidiscrete QD energy levels and the wetting layer. Good agreement between calculated and experimental data is obtained. Because of the discreteness of the energy levels, QD-SOAs demonstrate high FWM conversion efficiencies at high detuning frequency. Our calculations show that carrier escape from the ground state significantly affects the performance of the amplifier.     

Optical gain and saturation characteristics of quantum-dot semiconductor optical amplifiers

Detailed theoretical analysis of the gain characteristics of quantum-dot semiconductor optical amplifiers (QD-SOA) is presented. An analytical expression for the optical gain is derived from the quantum dot and wetting layer rate equations. Due to the better confinement of carriers in the quantum dots, our calculation shows that large unsaturated optical gain can be obtained at low operating current. Also, we found that the output saturation intensity of QD-SOA is higher than the output saturation intensity of bulk-SOA. This fact lends itself to the design of efficient low-power SOAs.     

Electroabsorption and electrooptic effect in SiGe-Si quantum wells:realization of low-voltage optical modulators

We have calculated the behavior of the band-to-band absorption coefficient in square, coupled, and graded bandgap Si_0.6Ge _0.4-Si quantum wells as a function of the transverse electric field. It is seen that due to the weak confinement of the electrons (ΔE_c⩽20 meV) the absorption of photons with energy equal to the interband transition energy can be reduced at very small values of the transverse electric field. This phenomenon lends itself to the design of efficient amplitude modulators. In addition, the resulting change in the refractive index is also large and the corresponding linear electrooptic coefficient is calculated to be as large as 1.9×10^-10 m/V in square wells. This effect could prove to be the basis for the realization of efficient Si-based electrooptic modulators. Device designs are discussed     

Analytical Model for Cross-Gain Modulation and Crosstalk in Quantum-Well Semiconductor Optical Amplifiers

An analytical model of the dynamic characteristics of a quantum-well (QW) semiconductor optical amplifier (SOA) is developed. Closed-form expressions for the optical gain and cross-gain modulation (XGM) for arbitrary input pulses are derived. The model takes into account the carrier capture and escape transitions between the QW and the continuum states. This model is also used to derive a closed-from expression for interchannel XGM crosstalk in multichannel SOA systems. The model/analysis provides insight into the effect of the SOA parameters on the performance of a wavelength-division multiplexed system. We found that crosstalk in a multichannel SOA system can be reduced by reducing the escape lifetime.     

High-speed modulation and switching characteristics ofIn(Ga)As-Al(Ga)As self-organized quantum-dot lasers

The dynamic characteristics, and in particular the modulation bandwidth, of high-speed semiconductor lasers are determined by intrinsic factors and extrinsic parameters. In particular, carrier transport through the heterostructure and thermalization, or quantum capture in the gain region, tend to play an important role. We have made a detailed study of carrier relaxation and quantum capture phenomena in In(Ga)As-Al(Ga)As self-organized quantum dots (QD's) and single-mode lasers incorporating such dots in the gain region through a variety of measurements. The modulation bandwidth of QD lasers is limited to 5-6 GHz at room temperature and increases to ~30 GHz only upon lowering the temperature to 100 K. This behavior is explained by considering electron-hole scattering as the dominant mechanisms of electron relaxation in QD's and the scattering rate seems to decrease with increase of temperature. The switching of the emission wavelength, from the ground state to an excited state, has been studied in coupled cavity devices. It is found that the switching speed is determined intrinsically by the relaxation time of carriers into the QD states. Fast switching from the ground to the excited state transition is observed. The electrooptic coefficients in the dots have been measured and linear coefficient τ=2.58×10^-11 m/V. The characteristics of electrooptic modulators (EOM's) are also described     

Electrically injected single-defect photonic bandgapsurface-emitting laser at room temperature

An electrically injected defect-mode photonic bandgap microcavity surface-emitting laser at room temperature is demonstrated for the first time. 931 nm lasing is observed under pulsed excitation conditions. With a threshold current of 300 μA. Near- and far-field modal characteristics of the emission confirm lasing from the defect-related microcavity in the photonic bandgap crystal     

Particle/cell separation on microfluidic platforms based on centrifugation effect: a review

Particle/cell separation in heterogeneous mixtures including biological samples is a standard sample preparation step for various biomedical assays. A wide range of microfluidic-based methods have been proposed for particle/cell sorting and isolation. Two promising microfluidic platforms for this task are microfluidic chips and centrifugal microfluidic disks. In this review, we focus on particle/cell isolation methods that are based on liquid centrifugation phenomena. Under this category, we reviewed particle/cell sorting methods which have been performed on centrifugal microfluidic platforms, and inertial microfluidic platforms that contain spiral channels and multi-orifice channels. All of these platforms implement a form of centrifuge-based particle/cell separation: either physical platform centrifugation in the case of centrifugal microfluidic platforms or liquid centrifugation due to Dean drag force in the case of inertial microfluidics. Centrifugal microfluidic platforms are suitable for cases where the preparation step of a raw sample is required to be integrated on the same platform. However, the limited available space on the platform is the main disadvantage, especially when high sample volume is required. On the other hand, inertial microfluidics (spiral and multi-orifice) showed various advantages such as simple design and fabrication, the ability to process large sample volume, high throughput, high recovery rate, and the ability for multiplexing for improved performance. However, the utilization of syringe pump can reduce the portability options of the platform. In conclusion, the requirement of each application should be carefully considered prior to platform selection.