排序方式: 共有1条查询结果,搜索用时 0 毫秒
1
1.
Rabinzohn P.D. Usagawa T. Mizuta H. Yamaguchi K. 《Electron Devices, IEEE Transactions on》1991,38(2):222-231
The bipolar/FET characteristics of the 2DEG-HBT are analyzed extensively by a two-dimensional numerical simulator based on a drift-diffusion model. For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f T is determined mainly by the collector transit time of holes and by the charging time of the extrinsic base-collector capacitance C bcEXT. The charging times of the emitter and base regions and the base transit time are shown to be negligible. A high cutoff frequency F T (88 GHz) and current gain h FE (760) are obtained for an emitter size of 1×10 μm2, and undoped collector thickness of 150 nm, and a collector current density J c of 105 A/cm2. The FET operation of the same 2DEG-HBT structure shows a threshold voltage V th of 0.74 V, the transconductance G mmax of 80 mS/mm, and maximum cutoff frequency F Tmax of 15 GHz. The dependence of the device performance on material parameters is analyzed extensively from a device design point of view 相似文献
1