Straightforward modeling of dynamic I–V characteristics for microwave FETs

This work presents a straightforward approach aimed at modeling the dynamic I–V characteristics of microwave active solid‐state devices. The drain‐source current generator represents the most significant source of nonlinearity in a transistor and, therefore, its correct modeling is fundamental to predict accurately the current and voltage waveforms under large‐signal operation. The proposed approach relies on using a small set of low‐frequency time‐domain waveform measurements combined with numerical optimization‐based estimation of the nonlinear model parameters. The procedure is applied to a gallium nitride HEMT and silicon FinFET. The effectiveness of the modeling procedure in terms of prediction accuracy and generalization capability is demonstrated by validation of the extracted models under operating conditions different than the ones used for the parameters estimation. Good agreement between measurements and model simulations is achieved for both technologies and in both low‐ and high‐frequency range. © 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:109–116, 2014.     

Analogue VLSI primitives for perceptual tasks in machine vision

A variety of computational tasks in early vision can be formulated through lattice networks. The cooperative action of these networks depends upon the topology of interconnections, both feedforward and recurrent ones. The Gabor-like impulse response of a 2nd-order lattice network (i.e. with nearest and next-to-nearest interconnections) is analysed in detail, pointing out how a near-optimal filtering behaviour in space and frequency domains can be achieved through excitatory/inhibitory interactions without impairing the stability of the system. These architectures can be mapped, very efficiently at transistor level, on VLSI structures operating as analogue perceptual engines. The hardware implementation of early vision tasks can, indeed, be tackled by combining these perceptual agents through suitable weighted sums. Various implementation strategies have been pursued with reference to: (i) the algorithm-circuit mapping (current-mode and transconductor approaches); (ii) the degree of programmability (fixed, selectable and tunable); and (iii) the implementation technology (2 and 0.8 gate lengths). Applications of the perceptual engine to machine vision algorithms are discussed.     

Neural approach for temperature‐dependent modeling of GaN HEMTs

Gallium nitride high electron‐mobility transistors have gained much interest for high‐power and high‐temperature applications at high frequencies. Therefore, there is a need to have the dependence on the temperature included in their models. To meet this challenge, the present study presents a neural approach for extracting a multi‐bias model of a gallium nitride high electron‐mobility transistors including the dependence on the ambient temperature. Accuracy of the developed model is verified by comparing modeling results with measurements. Copyright © 2014 John Wiley & Sons, Ltd.     

Investigation on the non‐quasi‐static effect implementation for millimeter‐wave FET models

The present article analyzes in detail different intrinsic small‐signal models for transistors. Particular attention is devoted to the non‐quasi‐static effects, which play a crucial role at microwave and millimeter‐wave frequencies. The advantages and disadvantages of these different equivalent circuit topologies are analyzed from both theoretical and experimental standpoints. This study clearly proves that best choice among these model representations depends on the specific device technology besides the investigated frequency range. © 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010.     

Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime

Electron device degradation, although not directly accounted for, represents a key issue in microwave circuit design. This is especially true when the particular applications involved (e.g., satellite, military, consumer) do not allow or strongly discourage any kind of maintenance. As a matter of fact, in order to account for device degradation in circuit design, a suitable electron device model is needed which is able to predict the performance degradation as a function of the actual electrical regime involved in the device operation. Such a kind of model is not available in literature. In this paper, quantitative results are provided for device degradation indicators which correlate DC and RF stress experiments. These results can be considered an important step toward the definition of a nonlinear model accounting for device degradation.     

Real-time foetal ECG extraction with JADE on floating point DSP

Foetal ECG extraction by means of ICA is a well-known solution, but the quality of on-line algorithms is often inadequate compared to the batch ones. A block-on-line version of the JADE algorithm aimed to follow the variations in the mixing process, avoiding traces permutation in this application domain, is presented jointly with its real-time implementation on a TMS320C6713 floating-point DSP. The results on a common benchmark are comparable with those achievable with the original batch algorithm, opening the possibility to develop a realtime diagnostic device.     

Artificial visual orientation map implemented as an inhomogeneous active resistor mesh

Active resistor meshes, characterised by an inhomogeneous anisotropic pattern of local interconnections, present node voltage responses to current impulses at the nodes that efficiently emulate signal processing functions of visual cortex neurons, organised into orientation maps. Experiments with artificial and natural textured images validated the approach.<>     

Dynamic strain aging in carbide-strengthened molybdenum alloys

A study was made of the dynamic strain aging processes in carbide strengthened molybdenum alloys. Strengthening due to dynamic strain aging was observed in the temperature range 1500° to 2400°F. The strengthening is believed to arise from the pinning of mobile dislocations by metal-carbon pairs or clusters and/or carbide precipitates. This immobilization of the dislocations led to a high work hardening rate and the observed strengthening.