A system-level design method for RF receiver front-end with low power consumption

Analog Integrated Circuits and Signal Processing - Due to wireless communication’s rapid growth, the need for low power integrated transceivers is increasing. The receiver power is a major...     

Synthesis of new phosphate derivative of benzothiazole and its inhibiting effect on two series of human neuroblastoma cell growth

The sodium salt of di ((1-hydroxy-2-benzothiazolium-1-yl) ethyliden-1,1-H-bisphosphonic acid) orthophosphate was synthesized and its toxicity and viability effects screened on two different human neuroblastoma cell lines. This novel derivative of benzothiazole provides a new compound in connection with research and therapeutic application for tumor cell growth inhibition. Benzothiazole was alkylated in reaction with bromoacetic acid and then converted to its H-bisphosphonic acid derivative in presence of H₃PO₃/POCl₃. The procedure led to formation of two molecules of corresponding H-bisphosphonic acid which attached together via a phosphate bridge. The investigated compound exhibits activities (IC₅₀ value) ranging from 14–23 μM (corresponding to human neuroblastoma SK-BE (2) and SK-NM-C cells).     

Low-power high-speed phase frequency detector based on carbon nano-tube field effect transistors

A phase frequency detector (PFD) with a very low dead zone is proposed which is based on a configuration adaptable to both CMOS or carbon nano-tube transistors (CNTFETs). In the first step the proposed configuration is designed using CMOS transistors, and then CNTFETs are substituted to improve the speed and reduce the propagation delay. The proposed PFD in addition to very low dead zone, has low power consumption and high frequency range of operation, which are achieved as a result of the elimination of the reset path. The simulation results based on 32 nm technology for CNTFET and 180 nm technology for CMOS, illustrate that CNTFET-based proposed circuit dissipates 2 µW and has frequency of operation up to 30 GHz, and the dead zone equal to 1 ps. Compared to the conventional PFD based on CMOS technology, its dead zone and power consumption are lower. In addition, the effects of blocks’ parameters including the phase detector, which affect the operation of the phase locked loop, or delay locked loop, are systematically analyzed.