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1.
The lateral modes of broad area lasers are investigated theoretically. The nonlinear interaction between optical field and effective refractive index leads to a saturable nonlinearity in the governing field equation, so that self-modulated solutions are found to be stable with increased current injection above saturation intensity. We derive approximate analytical solutions for traveling wave fields within the broad area laser. The field amplitude consists of a small ripple superimposed on a large dc value. Matching fields at the boundary determines the modulation depth and imparts an overall phase curvature to the traveling wave mode. There are multiple lateral modes for a given set of operating conditions, and modes with successively more lobes in the ripple have greater overall phase curvature. In contrast to the linear problem, several lateral modes can achieve the same modal gain, for a given injected current density, by saturating the gain to different extent. Thus, these modes would exhibit slightly different optical powers.  相似文献   
2.
The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate. Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials. Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore, we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth.  相似文献   
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In 2007, samples of treated effluent were collected at point of discharge to the environment from 39 wastewater treatment plants (WWTPs) located across Victoria, Australia grouped by treatment type. Sample genotoxicity was assessed with a high-throughput luminescent umu test method using Salmonella typhimurium TL210 strain, with and without addition of a commercially available metabolic activation system. Samples were also screened using a gas chromatographic-mass spectrometric mass-structure database recognition method. A genotoxic response was observed in half of the samples tested without metabolic activation system (相似文献   
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The authors present the results of an education investigation of knowledge retention. The programs of Dermatology and Psychiatry were studied, comparing the marks obtained in the fourth and fifth years. The examinations had the same content but were not identical and the fifth year's examination was applied in the first day of the training program. The losses of knowledge observed (average +/- standard error) were 20.0 +/- 2% for Dermatology and 27.0 +/- 3% for Psychiatry. These losses were not influenced by the time between the two examinations, by student's sex or race (oriental or not), or by the fact that the student had studied the contents of the disciplines out of the University program (hidden curriculum).  相似文献   
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A directional coupler formed by two Bragg reflection waveguides (BRWs) with a common finite periodic region between them is analyzed. The coupling coefficient is a sensitive function of the index difference in the periodic coupling section. This feature can lead to a novel kind of electrooptic switch. In addition, the BRW directional coupler exhibits dispersion properties characteristic of the periodic bounding media, which can be used to implement a narrowband wavelength filter and a TE polarizer  相似文献   
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Griffonia simplicifolia leaf lectin II (GSII), a plant defense protein against certain insects, consists of an N-acetylglucosamine (GlcNAc)-binding large subunit with a small subunit having sequence homology to class III chitinases. Much of the insecticidal activity of GSII is attributable to the large lectin subunit, because bacterially expressed recombinant large subunit (rGSII) inhibited growth and development of the cowpea bruchid, Callosobruchus maculatus (F). Site-specific mutations were introduced into rGSII to generate proteins with altered GlcNAc binding, and the different rGSII proteins were evaluated for insecticidal activity when added to the diet of the cowpea bruchid. At pH 5.5, close to the physiological pH of the cowpea bruchid midgut lumen, rGSII recombinant proteins were categorized as having high (rGSII, rGSII-Y134F, and rGSII-N196D mutant proteins), low (rGSII-N136D), or no (rGSII-D88N, rGSII-Y134G, rGSII-Y134D, and rGSII-N136Q) GlcNAc-binding activity. Insecticidal activity of the recombinant proteins correlated with their GlcNAc-binding activity. Furthermore, insecticidal activity correlated with the resistance to proteolytic degradation by cowpea bruchid midgut extracts and with GlcNAc-specific binding to the insect digestive tract. Together, these results establish that insecticidal activity of GSII is functionally linked to carbohydrate binding, presumably to the midgut epithelium or the peritrophic matrix, and to biochemical stability of the protein to digestive proteolysis.  相似文献   
10.
The transport properties of two-dimensional electron gas (2-DEG) at the AlGaN/GaN interface were studied by characterizing the 2-DEG mobility dependence on carrier concentration, n/sub s/, and temperature. High-quality AlGaN/GaN heterostructures were grown, and heterostructure field effect transistors (HFETs) using a Fat FET geometry were fabricated. Measurements of 2-DEG mobility were performed by magnetoresistance and capacitance-conductance. In order to understand the dominant transport factors, the mobility was modeled using different scattering mechanisms and compared to our results. It is found that mobility dependence on n/sub s/ shows a bell-shape behavior over the whole temperature range. For low n/sub s/ the mobility is dominated by Coulomb interaction from interface charge, and at high n/sub s/ the mobility is dominated by interface roughness. Using previously reported experimental values of interface charge and interface roughness in our modeling, we show good agreement with mobility measurement results. Scattering from interface states in AlGaN/GaN heterostructures, seems to be related to the high polarization field in the heterointerface. At temperatures higher than 200K polar optical phonon scattering dominates the transport, yet both interface charge and roughness affect the mobility at the low and high n/sub s/, respectively.  相似文献   
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