n-AlGaAs/GaAs/n-AlGaAs double quantum wells with an AlAs barrier: Relating the cladding doping level to structural and transport properties

Double quantum wells in the form of an AlGaAs/GaAs/AlGaAs heterostructure with an AlAs barrier a few monolayers thick are fabricated by MBE. Their structural and compositional characterization is carried out by double-crystal XRD and SIMS. Electron mobility is evaluated by Hall-effect measurements for different quantum-well thicknesses. Conditions are identified under which electron mobility can be enhanced by introduction of an ultrathin barrier into a single quantum well. The findings are analyzed from the viewpoint of interface structural quality.Translated from Mikroelektronika, Vol. 34, No. 2, 2005, pp. 98–109.Original Russian Text Copyright © 2005 by Vasilevskii, Galiev, Ganin, Imamov, Klimov, Lomov, Mokerov, Saraikin, Chuev.     

Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate

Semiconductors - On the basis of data on X-ray structural analysis performed by the method of reciprocal-space mapping and investigations using secondary-ion mass spectrometry and transmission...     

Elastic waves in a medium with a block structure

Institute of Mining, Siberian Branch, Academy of Sciences of the USSR, Novosibirsk. Translated from Fiziko-Tekhnicheskie Problemy Razrabotki Poleznykh Iskopaemykh, No. 1, pp. 14–21, January–February, 1988.     

Investigation of the thermal stability of metastable GeSn epitaxial layers

A stack of five elastically strained metastable GeSn layers with a thickness of 200 nm each separated by Ge spacer layers with a thickness of 20 nm is grown on a (001) Si/Ge virtual substrate. The molar fraction of Sn in the GeSn layers is 0.005, 0.034, 0.047, 0.072, and 0.10. After growth the structure is subjected to thermal annealing for 2 min at a temperature of 400°C. It is demonstrated that during the course of annealing the GeSn alloy, along with plastic relaxation, undergoes phase separation; this phase separation begins before the end of plastic relaxation. The structural degradation of the GeSn layers increases with increasing concentration of Sn accumulated on the structure surface in the form of an amorphous layer.