Hybrid Devices by Selective and Conformal Deposition of PtSe2 at Low Temperatures

2D materials display very promising intrinsic material properties, with multiple applications in electronics, photonics, and sensing. In particular layered platinum diselenide has shown high potential due to its layer-dependent tunable bandgap, low-temperature growth, and high environmental stability. Here, the conformal and area selective (AS) low-temperature growth of layered PtSe₂ is presented defining a new paradigm for 2D material integration. The thermally-assisted conversion of platinum which is deposited by AS atomic layer deposition to PtSe₂ is demonstrated on various substrates with a distinct 3D topography. Further the viability of the approach is presented by successful on-chip integration of hybrid semiconductor devices, namely by the manufacture of a highly sensitive ammonia sensors channel with 3D topography and fully integrated infrared-photodetectors on silicon photonics waveguides. The presented methodologies of conformal and AS growth therefore lay the foundation for new design routes for the synthesis of more complex hybrid structures with 2D materials.     

Frequency analysis of the electrocardiogram with maximum entropymethod for identification of patients with sustained ventriculartachycardia

Late potentials in the terminal phase of the QRS-complex during sinus rhythm have been proposed to identify a subgroup of patients with myocardial infarction at risk of ventricular tachycardia (VT). Frequency analysis of the ECG with Fourier transform (FFT) has been applied for detection of these microvolt level signals, but is limited by poor frequency resolution of short data segments and spectral leakage. We therefore developed frequency analysis using the maximum entropy method (MEM) based on an autoregressive (AR) model. Orthogonal electrocardiograms were recorded from the body surface of patients with and without VT, and healthy persons after low noise, high-gain amplification. Multiple 40 ms segments (time intervals 2 ms, AR-parameters tapered) were analyzed (spectrotemporal mapping): low-frequency components were eliminated by building difference spectra with optimal high order and fixed low order. The MEM-spectra revealed high frequency components (40-200 Hz) in the terminal phase of the QRS-complex and in the ST-section in 26/38 patients with VT, but only in 2/20 without VT and in 1/20 healthy persons (p less than 0.05). Unlike FFT, MEM allowed localization of late potentials by the analysis of short data segments. Thus, MEM offers promise for noninvasive identification of patients with sustained VT after myocardial infarction and detailed analysis of late potentials.     

Electromagnetic radiation from hot carriers in FET-devices

We report on the emission of light from si MOS and GaAs MES devices. Processes involving band-to-band transitions and a Bremsstrahlung-continuum below the band-gap are shown to exist. Spatially nonuniform emission from the MESFETs is observed. The GaAs results are compared with Monte Carlo simulations.     

The “LED-version” of the electron gun

We report on our progress to develop and optimize electron sources for practical applications. A simple fabrication process is introduced based on a wafer dicing saw and a wet chemical etch step without the need for a clean room. Due to the formation of crystal facets the samples show a homogeneous geometry throughout the array. Characterization techniques are developed to systematically compare various arrays. A very defined measurement procedure based on current controlled IV-sweeps as well as lifetime measurements at various currents is proposed. To investigate the current distribution in the array a commercial CMOS detector is used and shows the potential for in depth analysis of the arrays. Finally, a compact hermetically sealed housing is presented enabling electron generation in atmospheric pressure environments.