Precise Measurements of the Vapor-Liquid Equilibria (VLE) of HFC-32/134a Mixtures Using a New Apparatus

A new apparatus for precise measurements of the vapor-liquid equilibria of mixtures by the circulation method has been developed. This apparatus has two special components: a high-stability temperature control system and a helium pressurization system. The temperature in the liquid bath surrounding the sample cell is kept constant within ±0.5mK. The helium pressurization system increases the pressure of the sampled mixture when measuring the compositions at low temperatures by gas chromatography. With these components, the uncertainty in measuring the vapor-liquid equilibria has been reduced. Using this apparatus, the vapor-liquid equilibria of HFC-32/134a mixtures were measured in a temperature range of 263.15 to 293.15K. These results are in good agreement with the calculated results from REFPROP (Ver. 6.01) with a relative pressure difference of about 2%.     

Microwave low-noise AlGaAs/InGaAs HBT's with p+-regrownbase contacts

This paper reports low-noise AlGaAs/InGaAs heterojunction bipolar transistors (HBT's) with p⁺-regrown base contacts. To reduce the thermal and shot noises, we have reduced R_B by using a p ⁺-regrown base contact and have reduced τ_B by using a compositionally-graded thin base layer. As a result, F_min values of 0.9, 1.1, 1.2, and 1.6 dB were obtained at 2, 6, 12, and 18 GHz, respectively. These low-noise characteristics of our HBT's show high potential for low-noise application     

Fabrication of Liquid Helium-Free Superconducting Magnet for Millimeter Wave Gyrotron

A liquid helium free superconducting magnet was designed and fabricated and for an application to a millimeter wave gyrotron and a peniotron. The magnet generates a magnetic field of 5T in a 100mm room temperature bore and has been continuously working for more than 5,400 hours without troubles. The magnet system was applied to the millimeter wave gyrotron experiments to confirm the stability of the magnet. In the experiments, stable operations of the gyrotron were achieved in the frequency range of 30 - 133GHz.     

Characterization of current-induced degradation in Be-doped HBTsbased in GaAs and InP

The changes in the device characteristics under high-bias conditions are investigated for InAlAs/InGaAs and AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with heavily Be-doped base lasers, focusing on the base current and 1/f noise characteristics. It is shown that the ideality factor of the surface recombination base current provides information on the Be movement accompanying the degradation. For stress current densities up to 1.5×10⁵ A/cm², the Be movement in the InAlAs/InGaAs HBTs is estimated to be no more than a small fraction of the 5 nm setback layer. The 1/f noise measurement highlight the effect of current stressing on the surface recombination in the HBTs. A characteristic spectral shape is found in the noise spectra for the current-stressed AlGaAs/GaAs HBT, possibly originating from the degradation-induced carrier traps. Although both HBTs have similar electronic properties, these results illustrate the striking difference in their stress current behaviors     

Design considerations for millimeter-wave power HBTs based on gainperformance analysis

Critical design issues involved in optimizing millimeter-wave power HBTs are described. Gain analysis of common-emitter (CE) and common-base (CB) HBTs is performed using analytical formulas derived based on a practical HBT model. While CB HBT's have superior maximum-gain at very high frequencies, their frequency limit is found to be determined by the carrier transit time delay. Thus, to fully exploit the potential gain in a CB HBT, it is essential to maintain a high f_T even at high collector voltages. The advantage of using CB HBT's in a multifingered device geometry is also discussed. Unlike CE HBTs, CB HBTs are capable of maintaining a high gain even if the device size is scaled up by increasing the number of emitter-fingers. Moreover, it is found that reducing the wire parasitic capacitance allows emitter ballasting resistance to be used without affecting the gain. Fabrication of HBTs based on these design considerations led to excellent power performance in a CB unit-cell HBT at 25-26 GHz, featuring output power of 740 mW and power-added efficiency of 42%     

Space harmonic peniotron in a magnetron waveguide resonator

The paper describes both simulated and experimental results observed in high cyclotron harmonic peniotron oscillators with magnetron waveguide resonators and discusses the operation modes of the oscillation. We made the modes clear by considering interactions between an axis encircling electron beam and the space harmonic components of the respective modes generated in the magnetron waveguides. To make it possible to operated at higher frequencies, we introduced a new concept for designing high cyclotron harmonic tubes based on a space harmonic of the 2 π mode interaction. We then presented design parameters for a number of peniotron tubes operable up to 300 GHz with relatively low magnetic field     

Stress current behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT's withpolyimide passivation

InAlAs/InGaAs and AlGaAs/GaAs HBTs, with heavily Be-doped base layers, have been fabricated and their reliability under excessive forward current tested. To understand the HBT material difference, a common process based on a polyimide planarization method is applied to the fabrication. While short-term degradation induced by stress current is observed for AlGaAs/GaAs HBTs, InAlAs/InGaAs HBTs are stable up to a current density of 1.5×10⁵ A/cm², indicating the absence of substantial Be diffusion. An analysis of base current has shown a striking contrast between the HBTs in terms of the stressing effect on the surface recombination along emitter junction periphery     

A 40-Gb/s preamplifier using AlGaAs/InGaAs HBTs with regrown basecontacts

A preamplifier for 40-Gb/s optical transmission systems incorporating AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) with p⁺ regrown extrinsic base layers is described. The HBTs have a heavily doped regrown p⁺-GaAs layer in the extrinsic base regions and a thin graded InGaAs strained layer for the intrinsic base. Their measured peak f_max is above 200 GHz. The developed preamplifier provides a bandwidth of 38.4 GHz and a transimpedance gain of 41.1 dB Ω. Moreover, the frequency response as an optical receiver has a bandwidth of 32 GHz. These characteristics make the preamplifier suitable for use in a 40-Gb/s optical receiver. These results show that AlGaAs/InGaAs HBTs with p⁺ regrown extrinsic base layers are very promising for use in 40-Gb/s optical transmission systems     

Vapor-Liquid Equilibria of HFC-32/n-Butane Mixtures

The vapor-liquid equilibria of HFC-32 and n-butane mixtures were measured in a temperature range of 283.15 to 313.15 K using a circulation method. The experimental standard uncertainties of temperature, pressure, and composition measurements were estimated to be within 10 mK, 2 kPa, and 0.2% in mole fraction, respectively. The measured data were correlated with the Peng–Robinson (PR) equation of state using Wong and Sandler mixing rules. The relative deviations of the measured bubble-point pressure from the calculated bubble-point pressure as a function of the measured bubble-point pressure were found to be less than 2.5%.     

High-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBT's with p/sup +//p regrown base contacts

The present paper describes a new approach to fabricating high performance HBT's with low base resistance. Their base contact resistance is reduced by using MOMBE selective growth in the extrinsic base region-a key process in the fabrication of high-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBT's. A p/sup +//p regrown base structure, which consists of a 40-nm-thick graded InGaAs strained layer and a heavily C-doped regrown contact layer, is used for the AlGaAs/InGaAs HBT's to reduce both their base transit time and base resistance, while preventing aluminum oxide incorporation at the regrowth interface. An h/sub fe/ of 93, an f/sub T/ of 102 GHz, and an f/sub max/ of 224 GHz are achieved for a 1.6-/spl mu/m/spl times/4.6-/spl mu/m HBT, together with reduced base push-out effects and improved reliability. AlGaAs/GaAs HBT's with an 80-nm-thick uniform base layer that have high f/sub max/ values ranging from 140-216 GHz are also fabricated using the selective growth technique. These results confirm the high potential of the proposed HBT's, especially for microwave and millimeter-wave applications.<>