Observations of high-field domains in GaxIn1 ? xSb Gunn diodes

The properties of high-field domains in GaxIn1-xSb Gunn diodes (0.4 < x < 0.82) have been studied by measuring the surface potential on the diodes. The domain velocities vary with the Ga composition x, 5.3?6.1×106 cm/s for0.8 > x > 0.55 and 10×106 cm/s for x = 0.4, but they are almost independent of the applied voltage, even if the electron concentration is increased by the impact ionisation in the domain at high applied voltages for the small-x samples.     

Estrogen Stimulates Proliferation and Differentiation of Neural Stem/Progenitor Cells through Different Signal Transduction Pathways

Our previous study indicated that both 17β-estradiol (E2), known to be an endogenous estrogen, and bisphenol A (BPA), known to be a xenoestrogen, could positively influence the proliferation or differentiation of neural stem/progenitor cells (NS/PCs). The aim of the present study was to identify the signal transduction pathways for estrogenic activities promoting proliferation and differentiation of NS/PCs via well known nuclear estrogen receptors (ERs) or putative membrane-associated ERs. NS/PCs were cultured from the telencephalon of 15-day-old rat embryos. In order to confirm the involvement of nuclear ERs for estrogenic activities, their specific antagonist, ICI-182,780, was used. The presence of putative membrane-associated ER was functionally examined as to whether E2 can activate rapid intracellular signaling mechanism. In order to confirm the involvement of membrane-associated ERs for estrogenic activities, a cell-impermeable E2, bovine serum albumin-conjugated E2 (E2-BSA) was used. We showed that E2 could rapidly activate extracellular signal-regulated kinases 1/2 (ERK 1/2), which was not inhibited by ICI-182,780. ICI-182,780 abrogated the stimulatory effect of these estrogens (E2 and BPA) on the proliferation of NS/PCs, but not their effect on the differentiation of the NS/PCs into oligodendroglia. Furthermore, E2-BSA mimicked the activity of differentiation from NS/PCs into oligodendroglia, but not the activity of proliferation. Our study suggests that (1) the estrogen induced proliferation of NS/PCs is mediated via nuclear ERs; (2) the oligodendroglial generation from NS/PCs is likely to be stimulated via putative membrane-associated ERs.     

Synthesis of N‐Hydroxycinnamides Capped with a Naturally Occurring Moiety as Inhibitors of Histone Deacetylase

Histone deacetylase (HDAC) inhibitors are regarded as promising therapeutics for the treatment of cancer. All reported HDAC inhibitors contain three pharmacophoric features: a zinc‐chelating group, a hydrophobic linker, and a hydrophobic cap for surface recognition. In this study we investigated the effectiveness of osthole, a hydrophobic Chinese herbal compound, as the surface recognition cap in hydroxamate‐based compounds as inhibitors of HDAC. Nine novel osthole‐based N‐hydroxycinnamides were synthesized and screened for enzyme inhibition activity. Compounds 9 d , 9 e , 9 g exhibited inhibitory activities (IC₅₀=24.5, 20.0, 19.6 nM ) against nuclear HDACs in HeLa cells comparable to that of suberoylanilide hydroxamic acid (SAHA; IC₅₀=24.5 nM ), a potent inhibitor clinically used for the treatment of cutaneous T‐cell lymphoma (CTCL). While compounds 9 d and 9 e showed SAHA‐like activity towards HDAC1 and HDAC6, compound 9 g was more selective for HDAC1. Compound 9 d exhibited the best cellular effect, which was comparable to that of SAHA, of enhancing acetylation of either α‐tubulin or histone H3. Molecular docking analysis showed that the osthole moiety of compound 9 d may interact with the same hydrophobic surface pocket exploited by SAHA and it may be modified to provide class‐specific selectivity. These results suggest that osthole is an effective hydrophobic cap when incorporated into N‐hydroxycinnamide‐derived HDAC inhibitors.     

Measurements of the electron accumulation on two Schottky diodes connected metal to metal

Electron accumulation on the metal sides of two Schottky diodes connected metal to metal was observed as a result of the temporary variation of bias between the semiconductor sides of both diodes. The potential of the metals was found to be predictable by a theory based on a property of the Schottky diode.     

Gunn-effect high-speed carry finding device for 8 bit binary adder

A high-speed carry finding device consisting of seven inhibitors, each an integrated Schottky electrode-triggered Gunn device and an m.e.s.f.e.t., was fabricated monolithically. The device could find and store carry signals of all digits in 330 ps at the worst logic case. The anode-voltage margin was 11%     

Compatibilization and elastomer toughening of polyamide‐6 (PA6)/poly(phenylene ether) (PPE) blends

In the elastomer‐modified (polyamide‐6/poly(phenylene ether) (PA6/PPE) = 50/50 blends, poly(styrene‐co‐maleic anhydride) (SMA) was demonstrated to be an efficient reactive compatibilizer. The G1651 elastomer was shown to be an effective impact modifier to result in superior toughness and heat‐deflection temperature (HDT) than is the 1901X elastomer for the SMA‐compatibilized blends because G1651 particles exclusively reside within the dispersed PPE phase but 1901X particles tend to distribute in the PA6 matrix and/or along the interface. The apparent average diameter of the dispersed PPE phase is insignificantly dependent on the elastomer content in the G1651‐modified blend, whereas it increases with increase of the elastomer content in the 1901X‐modified blend. Moreover, there exists a critical elastomer content, 15 phr, for the ductile–brittle transition of the G1651‐modified SMA‐modified PA6/PPE blends. © 1999 John Wiley & Sons, Inc. J Appl Polym Sci 74: 23–32, 1999     

Gunn-effect memory device using the charge accumulation on a Schottky-trigger electrode

A new Gunn-effect memory device using the charge accumulation on a Schottky-trigger electrode is proposed and its operation demonstrated with a monolithically fabricated device. Theoretical calculations show that the device could be modified into a static memory device if the Schottky electrode potential is chosen as the output.     

Superhydrophobic films of UV‐curable fluorinated epoxy acrylate resins

Photopolymerization processes are often used in industrial applications because of their solvent‐free formulations and various advantages over conventional thermal processes. Fluorinated monomers and oligomers yield coatings of great interest because of the peculiar characteristics of fluorine atoms: these coatings show hydrophobicity, chemical stability, weathering resistance, etc. Novel UV‐curable fluorinated epoxy acrylate oligomers were synthesized from 1H,1H‐perfluorohexan‐1‐ol, 1,6‐hexamethylene diisocyanate (HDI) and epoxy acrylate (EA). The HDI plays the role of a spacer group in the side chain between the EA backbone chain and the fluorinated segment. This new spacer containing a urethane moiety with long alkyl groups can exhibit a self‐organization effect through the formation of strong hydrogen bonding. This resulted in a stiffening of the whole HDI urethane–perfluoalkyl chain to form nanostructure surface segregation. The designed fluorinated EA with fluoroalkyl (C₅F₁₁) units in the side chain exhibited a contact angle of about 151°, which is in the superhydrophobic range. Copyright © 2010 Society of Chemical Industry