Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon

Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelength range for both active and barrier regions. The technology proposed opens up new possibilities for the integration of direct-band III–V materials on silicon.     

Composite system based on CdSe/ZnS quantum dots and GaAs nanowires

The possibility of fabricating a composite system based on colloidal CdSe/ZnS quantum dots and GaAs nanowires is demonstrated and the structural and emission properties of this system are investigated by electron microscopy and photoluminescence spectroscopy techniques. The good wettability and developed surface of the nanowire array lead to an increase in the surface density of quantum dots and, as a consequence, in the luminosity of the system in the 600-nm wavelength region. The photoluminescence spectrum of the quantum dots exhibits good temperature stability in the entire range 10–295 K. The impact of surface states on energy relaxation and the role of exciton states in radiative recombination in the quantum dots are discussed.     

MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first time. The diameter of these NWs is smaller than that of similar NWs grown on a silicon substrate. In particular, the minimum diameter is less than 10 nm for InAs NWs. In addition, it was assumed on the basis of photoluminescence measurements that, when AlGaAs NWs are grown on these substrates, a complex structure is formed due to the self-organized formation of AlGaAs quantum dots with a lower content of aluminum, embedded in the NWs.     

Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate

The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.     

Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate

Semiconductors - We present the results of photoluminescence measurements of AlxGa1 – xAs nanowires, together with the transmission electron microscopy structural analysis....     

Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts

Technical Physics Letters - Arrays of GaN nanowires (NWs) and nanotubes (NTs) have been grown by metalorganic vapor phase epitaxy using a gold–nickel film as the catalyst. The simultaneous...     

The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires

Technical Physics Letters - We have studied the role of EL2 centers in formation of the photoelectric response of an array of radial n-type GaAs/AlxGa1 –xAs (x = 0.3) nanowires (NWs) grown by...     

MBE-Grown InxGa1 –xAs Nanowires with 50% Composition

Semiconductors - In a particular case of Au-catalyzed InxGa1 –xAs nanowires, wide compositional tuning has been obtained using metal organic vapor-phase epitaxy, which remains difficult for...     

Photovoltaic properties of GaAs:Be nanowire arrays

Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.