Ultra-broadband 20.5-31 GHz monolithically-integrated CMOS power amplifier

A fully monolithically-integrated power amplifier with a bandwidth (-3 dB) from 20.5 to 31 GHz was realised in a 0.13 /spl mu/m standard CMOS technology. A maximum power added efficiency of 13% with a corresponding output power of 13 dBm was achieved at 25.7 GHz with 1.5 V supply voltage.     

Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology

In this paper, two fully integrated voltage-controlled oscillators (VCOs) in a 200-GHz f/sub T/ SiGe bipolar technology are presented. The oscillators use on-chip transmission lines at the output for impedance transformation. One oscillator operates up to 98 GHz and achieves a phase noise of -85dBc/Hz at an offset frequency of 1 MHz. It can be tuned from 95.2 to 98.4 GHz and it consumes 12 mA from a single -5-V supply. The second oscillator operates from 80.5 GHz up to 84.8 GHz with a phase noise of -87dBc/Hz at 1-MHz offset frequency. The output power of both circuits is about -6dBm.     

A high-IP3 RF receiver chip set for mobile radio base stations upto 2 GHz

We present a monolithically integrated high third-order intercept point (IP3) radio frequency (RF) receiver chip set for mobile radio base stations up to 2 GHz, in a 25-GHz f_T Si bipolar production technology. The chip set consists of a RF preamplifier, active mixer circuits, and an intermediate frequency (IF) limiter. The preamplifier gain is 12 dB, the noise figure is 5.5 dB at 900 MHz, and the output (OIP3) is up to +24 dBm depending on supply voltage. The two different mixers provide a conversion gain of 1.5 dB up to 3 dB, an OIP3 in the range of +21 dBm up to +29 dBm, and a minimal single sideband (SSB) noise figure of 13 dB. The IF limiter shows an excellent limiting characteristic at 10 dBm output power and has a high bandwidth of more than 1 GHz     

Comparison of 24 GHz receiver front-ends using active and passive mixers in CMOS

This study compares the key parameters of two integrated receiver front-end architectures: low noise amplifier (LNA) with active mixer against LNA with passive mixer. The authors discuss the differences in the performance and their impact on system characteristics for radar applications. A low-IF down-conversion receiver implementation is considered. The results are compared in measurement for two 24 GHz receiver front-end chips realised in a 0.13 mm digital CMOS process. Both circuits have been characterised over automotive temperature range -40 to 125°C. The front-end with an active mixer offers lower LO power dependence and exhibits better temperature stability, whereas the front-end with a passive mixer has the advantage of better input-referred linearity and lower flicker noise.     

Ultraviolet laser beam and confocal microscopy - A system for rapid patterned photolysis

Fluorescence microscopy is generally used for the research of biology, medical sciences and other life science fields. Especially, recent advances in laser technologies and in optical engineering have made it possible to investigate the nanoscale mechanisms of physiological and molecular biological processes and thus to extend its application to pathological and clinical investigations in therapeutic sciences. Furthermore, quantitative measurements of the small molecules, ions and proteins participated into the processes in living tissues, in vivo and in vitro, its movements, and locations can be observed with these optical technologies. Among them, the confocal microscopy was firstly invented for the purpose of visualization of such small-scale observations by using proper fluorescent molecules together with laser beams. Although contrast and resolution are degraded by strong scattering of the tissue preparations in the wide field conventional fluorescence microscope, the development of the confocal microscope can overcome some of the effects of scattering, since the detector pinhole rejects fluorescence from off-focus locations     

5-6.5 GHz LTCC power amplifier module with 0.3 W at 2.4 V in Si-bipolar

A fully integrated 5.5 /spl times/ 8.1 mm/sup 2/ low temperature cofired ceramic (LTCC) power amplifier module for 5-6.5 GHz has been realised in a 40 GHz-f/sub T/-BiCMOS technology. No external components are required. At 1 to 2.4 V supply voltages output powers of 17.5 to 24.8 dBm are achieved at 5.9 GHz. The respective power added efficiency is 28 to 36%. The small-signal gain is 23 dB.     

An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology

This paper reports on the design, fabrication, and characterization of a lumped broadband amplifier in SiGe bipolar technology. The measured differential gain is 20 dB with a 3-dB bandwidth of more than 84 GHz, which is the highest bandwidth reported so far for broadband SiGe bipolar amplifiers. The resulting gain bandwidth product (GBW) is more than 840 GHz. The amplifier consumes a power of 990 mW at a supply of -5.5 V.     

Artemin, a novel member of the GDNF ligand family, supports peripheral and central neurons and signals through the GFRalpha3-RET receptor complex

The glial cell line-derived neurotrophic factor (GDNF) ligands (GDNF, Neurturin [NTN], and Persephin [PSP]) signal through a multicomponent receptor system composed of a high-affinity binding component (GFRalpha1-GFRalpha4) and a common signaling component (RET). Here, we report the identification of Artemin, a novel member of the GDNF family, and demonstrate that it is the ligand for the former orphan receptor GFRalpha3-RET. Artemin is a survival factor for sensory and sympathetic neurons in culture, and its expression pattern suggests that it also influences these neurons in vivo. Artemin can also activate the GFRalpha1-RET complex and supports the survival of dopaminergic midbrain neurons in culture, indicating that like GDNF (GFRalpha1-RET) and NTN (GFRalpha2-RET), Artemin has a preferred receptor (GFRalpha3-RET) but that alternative receptor interactions also occur.     

A fully integrated 5.3-GHz 2.4-V 0.3-W SiGe bipolar power amplifier with 50-/spl Omega/ output

A radio frequency power amplifier for 4.8-5.7 GHz has been realized in a 0.35-/spl mu/m SiGe bipolar technology. The balanced two-stage push-pull power amplifier uses two on-chip transformers as input-balun and for interstage matching. Further, it uses three coils for the integrated LC-output balun and the RF choke. Thus, the power amplifier does not require any external components. At 1.0-V, 1.5-V, and 2.4-V supply voltages, output powers of 17.7 dBm, 21.6 dBm, and 25 dBm are achieved at 5.3 GHz. The respective power-added efficiencies (PAE) are 15%, 22%, and 24%. The small-signal gain is 26 dB. The output 1-dB compression point at 2.4 V is 22 dBm with a PAE of 14%.     

A monolithic transformer coupled 5-W silicon power amplifier with59% PAE at 0.9 GHz

This paper presents the circuit design and application of a monolithically integrated silicon radio-frequency power amplifier for 0.8-1 GHz. The chip is fabricated in a 25-GHz-f_T silicon bipolar production technology (Siemens B6HF). A maximum output power of 5 W and maximum efficiency of 59% is achieved. The chip is operating from 2.5 to 4.5 V. The linear gain is 36 dB. The balanced two-stage circuit design is based fundamentally on three on-chip transformers. The driver stage and the output stage are connected in common-emitter configuration. The input signal can be applied balanced or single-ended if one input terminal is grounded. One transformer at the input acts as balun as well as input matching network. Two transformers acts as interstage matching network