Design and Biopharmaceutical Evaluation of Nitrofurantoin-Loaded Eudragit RS100 Micropellets

Nitrofurantoin, a synthetic bactericidal drug, was encapsulated with Eudragit RS 100 polymer by a coacervation phase separation technique using variable proportions of polyisobutylene (0% to 3%) as a protective colloid. The micropellets were evaluated by scanning electron microscopy (SEM), particle size distribution, wall thickness, and loss of wall polymer were determined. The in vitro release experiments were carried out over the entire pH range of the gastrointestinal tract, the data obtained from the dissolution profiles were compared in the light of different kinetic models, and the regression coefficients were compared. The in vivo studies were performed on female human volunteers. A linear correlation was obtained from in vitro-in vivo studies.     

Charge sheet model of a polysilicon thin-film transistor

A simple analytical model for the current–voltage characteristics of a poly-Si thin-film transistor (TFT) using charge sheet analysis has been developed. An effective doping due to the presence of trap levels at grain boundaries and the effect of diffusion current is considered. The model also takes into account the charge sharing factor, necessary to explain the characteristics of a short channel device. The results so obtained for both long- and short-channel lengths were compared with the experimental data and good agreement was found. The transconductance and the drain conductance were also evaluated.     

A complete analytical model of GaN MESFET for microwave frequency applications

A simple physics-based analytical model for a non-self-aligned GaN MESFET suitable for microwave frequency applications is presented. The model includes the effect of parasitic source/drain resistances and the gate length modulation. The model is then extended to evaluate I–V and C–V characteristics, transconductance, cut-off frequency, transit time, RC time constant, optimum noise figure and maximum power density. The transconductance of about 21 mS/mm is obtained for GaN MESFET using the present theory in comparison to 23 mS/mm of the reported data. The cut-off frequency of more than 1 GHz, optimum noise figure of 6 dB and maximum output power density of more than 1 W/mm are predicted.