排序方式： 共有1条查询结果，搜索用时 15 毫秒
1
1.
Sprotte A. Buckhorst K. Brockherde W. Hosticka B.J. Bosch D. 《Solid-State Circuits, IEEE Journal of》1994,29(8):1002-1005
A magnetic-field sensor system integrated in CMOS technology with additional processing steps necessary for sensor fabrication is presented. The system contains a magnetoresistive permalloy microbridge acting as a sensor, temperature compensation circuitry, programmable readout electronics, reference voltage bias, and clock generation. It features maximum magnetic flux sensitivity of 70 mV/μT (corresponds to the magnetic-field sensitivity of 88.2 mV/(A/m) at μr=1) and its temperature gain is below 260 ppm/°C in the range between -50°C and +100°C 相似文献
1