Surface Segregation Mechanisms in Ferroelectric Thin Films

Reliability issues have hampered the adoption of ferroelectric thin films by the microelectronics industry. One of these is imprint, an important problem affecting the performance of ferroelectric non-volatile memories. This paper presents the effects of the low temperature pyrolysis step on the chemical and physical properties of SrBi₂Ta₂O₉ films. A comparison of the hysteretic properties and composition profiles shows that control of the oxidising conditions during pyrolysis is critical to the dielectric properties. Data from this work and from the literature have been used to construct a model that explains the origin of surface depletion and segregation, self poling and as-grown imprint in ferroelectric films.     

Anomalous off-current mechanisms in N-channel poly-Si thin film transistors

The anomalous off-current (I_off) in polysilicon thin film transistors (polysilicon TFTs) is one of the major problems preventing a wide use of these devices in active matrix liquid crystal displays. While previous investigations have focused on the temperature range above 300 K, in this study we have investigated the behaviour of I_off over a wide range of temperatures, namely 180–400 K. The data have been analysed by combining 2D simulations and existing analytic models. By this approach we have identified a pure trap-to-band tunnelling mechanism in polysilicon TFTs and deduced, by a simple procedure, the physical constants. The temperature and bias dependence of the off-current has been explained quantitatively in terms of phonon-assisted tunnelling. The number of generating centres, the dominant trap energy and the thermal capture cross section are deduced from this analysis.     

Efficient designs for studying synergistic drug combinations

Distinguishing between pharmacologically additive and synergistic drug combinations requires experimental designs and statistical analyses that often require appreciable numbers of animals and much experimenter time. The current study employed a design in which individual dose-effect data from each drug were translated into theoretically additive total dose combinations, in a fixed drug proportion, in order to produce a composite additive dose-effect relation that could be compared with that of an actual mixture having the same proportion. Results from this approach, using a combination of intrathecal doses of morphine and clonidine, were virtually identical to those using isobolographic analysis of the same data set. Both analyses showed significant synergism for this combination and, in each method, it was not necessary to constrain the drug regression lines to parallelism. In contrast to the isobole approach, the use of the composite additive dose-effect relation also allows observation of the interaction over a range of effects while reducing the size of the data sets needed.     

Effects of annealing temperature and surface preparation on the formation of cobalt silicide interconnects

Cobalt silicide films have been prepared by rapid thermal annealing of cobalt layers sputter deposited on silicon substrates. We report on the evolution of silicide phases, surface and interface roughness as a function of the annealing temperature and silicon surface preparation. The characterizations are carried out by atomic force microscopy, X-ray diffraction, X-ray reflectivity, Raman spectroscopy, and transmission electron microscopy. The cleaning procedure of the silicon substrate affects the interface roughness and the silicide thickness, whereas little effects are found on the surface. On the other hand, surface roughness increases with annealing temperature.     

Antivasoconstrictor and antiaggregatory activities of picotamide unrelated to thromboxane A2 antagonism

Picotamide is a dual thromboxane (Tx) A2 receptor antagonist/Tx synthase inhibitor although some observations suggest an anti-vasoconstrictor effect independent of TxA2 inhibition/antagonism. The aim of our study was to assess whether picotamide antagonises vascular contractions induced by different vasoactive substances in vitro. Picotamide inhibited competitively the contraction of rabbit aortic rings induced by the TxA2 mimetic U46619 (pA2 = 3.59) but also the contractions induced by phenylephrine (pA2 = 3.93) and serotonin (5-HT) (pA2 = 5.81) although in a not competitive way. Picotamide did not inhibit potassium-induced contractions, thus excluding aspecific effects on vascular smooth muscle. Picotamide inhibited 5-HT-induced platelet aggregation in vitro with an IC50 (212 microM) similar to that found when other aggregating stimuli are used, but it did not affect shape change (IC50 > 1 mM) suggesting that the effects of picotamide can not be ascribed to 5-HT2-receptor antagonism; in the same experimental conditions neither a Tx-receptor antagonist (BM13.177) nor a dual Tx-receptor antagonist/synthase inhibitor (ridogrel) affected 5-HT-induced platelet responses. Our studies demonstrate that picotamide exerts antivasoconstrictor and platelet inhibitory effects unrelated to TxA2 antagonism. This activity may contribute to the anti-thrombotic/anti-ischaemic effects of the drug in vivo.     

Transient loss of dopamine autoreceptor control in the presence of highly potent dopamine agonists

The concentrations of endogenous ligands generally remain in a bounded range around a basal level, a manifestation of control. The dopaminergic system is an excellent example of a control system in which a negative feedback signal is associated with receptor occupancy of a D2-like dopamine autoreceptor. A consequence of the control theory is that autoreceptor occupancy by an agonist results in dopamine levels below the basal, whereas similar stimulation by a dopamine competitive antagonist results in an increase of dopamine to levels above the basal. These consequences of control theory were tested and verified in the rat striatum by infusing graded doses of either the agonist, quinpirole, or the antagonist, sulpiride, into the rat striatum via a microdialysis probe and sampling dopamine and metabolite levels at various times after the start of infusion. Control was maintained even at the very highest doses of these compounds, i.e., striatal dopamine concentration rose in response to the antagonist and fell in response to the agonist. In contrast, administration of each of two high affinity dopamine agonists, 7-OH-DPAT and PPHT showed dose-dependent control only up to certain doses. Above these doses the dopamine concentration actually increased to levels well above basal, an indication of loss of control. These findings suggest that the control of this endogenous ligand does not extend to the very highest levels of autoreceptor occupancy.     

New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

We report on the fabrication of Schottky diodes based on n-type zinc oxide (ZnO) grown by atomic layer deposition (ALD) at low temperature (100 °C). These structures are suitable as selector elements in highly integrated non volatile memories based on crossbar architecture. The junctions are fully realized by optical lithography and the smallest investigated structures are 3 × 3 μm² area. Several metals have been tested to single out the most suitable ohmic and Schottky contact materials. The electrical characterisation shows good properties with a forward current above 10⁴ A/cm² and a rectifying ratio of 10⁵.     

Al-oxynitrides as a buffer layer for Pr2O3/SiC interfaces

We elaborate the possibility of combining high-k dielectrics with wide band gap semiconductors, i.e. Pr₂O₃ on SiC. The thermal stability of interfacial aluminum oxynitride (AlON) layers between Pr-oxide and SiC has been investigated by synchrotron radiation photoemission spectroscopy (SRPES). The interface of Pr₂O₃ with SiC is reactive. Such reaction is successfully prevented by utilizing a stable interlayer derived from AlON. No elemental carbon is observed in detectable amount after Pr-Oxide deposition on AlON covered 3C-SiC and subsequent vacuum annealing. After vacuum annealing at 500 °C AlON transformed to AlN and Pr-aluminate with a small amount of CN close to the SiC surface which were thermally stable even at 900 °C. AlON hence provides a good diffusion barrier between Pr-oxide dielectric and 3C-SiC.