trans-2-phenylcyclopropylamine is a substrate for and inactivator of horseradish peroxidase

Horseradish peroxidase (HRP) is well known for mediating the electron-transfer oxidation of electron-rich aromatic 'donors' such as phenols and anilines, but has not been described to oxidize aliphatic amines. We here confirm the inability of HRP to oxidize typical aliphatic amines, even those which would exist significantly as free bases at the operative pH. In contrast, trans-2-phenylcyclopropylamine (2-PCPA) is both a substrate (turnover product is cinnamaldehyde) and a time-dependent inactivator of HRP. These activities of 2-PCPA are consistent with either a concerted or rapid sequential one-electron-oxidation/ring-opening to give an intermediate capable of covalent binding to the enzyme. 2-PCPA is the first known example of a simple aliphatic amine which serves as a substrate for HRP under turnover conditions.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Reduced skin tumor development in cyclin D1-deficient mice highlights the oncogenic ras pathway in vivo

Cyclin D1 is part of a cell cycle control node consistently deregulated in most human cancers. However, studies with cyclin D1-null mice indicate that it is dispensable for normal mouse development as well as cell growth in culture. Here, we provide evidence that ras-mediated tumorigenesis depends on signaling pathways that act preferentially through cyclin D1. Cyclin D1 expression and the activity of its associated kinase are up-regulated in keratinocytes in response to oncogenic ras. Furthermore, cyclin D1 deficiency results in up to an 80% decrease in the development of squamous tumors generated through either grafting of retroviral ras-transduced keratinocytes, phorbol ester treatment of ras transgenic mice, or two-stage carcinogenesis.     

Interference-based micromechanical spectral equalizers

Dynamic gain equalization filters (DGEFs) are important for high-performance wavelength division multiplexed (WDM) communications. One of the first demonstrated DGEF used a micromechanical etalon filter array illuminated with free-space spectral demultiplexing optics. Here, we present subsequent research on etalon-based dynamic spectral filters, including vertical device structures which linearize and reduce the drive voltage from 70 to 40 V, and spatially-segmented etalons which allow channelized spectral equalization and further reduce drive voltage. We describe a prototype using a simplified cylindrical optomechanical package with a 104-nm broadband spectral response, 7.5-dB insertion loss and less than 16-V operation voltage. Finally, we show the use of a 42-nm bandwidth DGEF prototype with feedback stabilization to more than double the number of channels and operating bandwidth of a conventional Erbium-doped fiber amplifier while maintaining < 1-dB power uniformity.     

The commercial currency of construction framework agreements

A critique is presented of construction client–main contractor framework agreements. In the midst of an unpredictable and volatile construction environment, the commercial currency of collaborative working practice, and by extension framework agreements, is being put under increasing management scrutiny. Drawing on a literature review, the guiding principles of framework agreements are examined. A dramatic downturn in construction demand has created considerable surplus in supply. Under such conditions the buyer–supplier interdependencies become imbalanced and commercial relationships fraught. Reports by construction industry analysts demonstrate a number of private sector clients rejecting framework agreements in favour of traditional competitive procurement practices. Drawing upon a neoclassical lens, three guiding principles embedded within economic orthodoxy are employed to examine business-to-business tensions within construction framework agreements, namely, individualism, instrumentalism and equilibrium. This neoclassical interpretation of construction framework agreements reveals a potential relational management bias within mainstream rhetoric. Notably, providing a complementary account of framework agreements practice should not be construed as a rejection of collaborative working practices. An alternative account of framework agreements is presented that does not rely upon the mainstream behavioural model of contemporary contracting.     

Molecular beam epitaxial HgCdTe material characteristics and device performance: Reproducibility status

Extensive material, device, and focal plane array (FPA) reproducibility data are presented to demonstrate significant advances made in the molecular beam epitaxial (MBE) HgCdTe technology. Excellent control of the composition, growth rate, layer thickness, doping concentration, dislocation density, and transport characteristics has been demonstrated. A change in the bandgap is readily achieved by adjusting the beam fluxes, demonstrating the flexibility of MBE in responding to the needs of infrared detection applications in various spectral bands. High performance of photodiodes fabricated on MBE HgCdTe layers reflects on the overall quality of the grown material. The photodiodes were planar p-on-n junctions fabricated by As ion-implantation into indium doped, n-type, in situ grown double layer heterostructures. At 77K, diodes fabricated on MBE Hg_1−xCd_xTe with x ≈ 0.30 (λ_co ≈ 5.6 μm), x ≈ 0.26 (λ_co ≈ 7 μm), x ≈ 0.23 (λ_co ≈ 10 μm) show R₀A products in excess of 1 x 10⁶ ohm-cm², 7 x 10⁵ ohm-cm², and 3 x 10² ohm-cm², respectively. These devices also show high quantum efficiency. As a means to assess the uniformity of the MBE HgCdTe material, two-dimensional 64 x 64 and 128 x 128 mosaic detector arrays were hybridized to Si multiplexers. These focal plane arrays show an operability as high as 97% at 77K for the x ≈ 0.23 spectral band and 93% at 77K for the x ≈ 0.26 spectral band. The operability is limited partly by the density of void-type defects that are present in the MBE grown layers and are easily identified under an optical microscope.     

Vitrification of nuclear waste with low heat generation

Analyses of thermal processes in the glass melter and storage container are given for vitrification of defense waste.     

Variable temperature hall effect on p-Hg1−xCdxTe grown on CdTe and sapphire substrates by liquid phase epitaxy

Variable temperature Hall effect measurements have been made down to 9–10K on p-type Hg_1−xCd_xTe grown by liquid phase epitaxy on both CdTe and sapphire substrates. Carrier freeze-out was usually observed throughout the measured temperature range. For most samples, the hole mobility was well-behaved and exhibited a maximum at ˜ 35K. Values of acceptor ionization energy E_A and donor concentration N_D were estimated from the data, using a model assuming significant compensation, which provided a good fit to the low temperature data. In addition, values of N_D were also estimated from an analysis of the low temperature mobility using the hole effective mass as a parameter to provide reasonable agreement between the N_D values calculated from the Hall coefficient and mobility data. The measured carrier concentration is a result of close compensation between stoichiometric acceptors and donors, with N_D usually in the low-10¹⁷ cm⁻³ range. Average values of E_A for as-grown, undoped x = 0.32 layers on CdTe and sapphire substrates are 7.4 and 6.6 meV, respectively. An activation energy of 0.84 meV was determined for a Cu-doped x = 0.32 layer that was annealed in Hg vapor to reduce the number of Hg vacancies. The average E_A for undoped Hg-annealed x = 0.22 layers on CdTe substrates is 2.35 meV. Layers with x = 0.32 grown on sapphire substrates have average carrier concentrations of 2.92 (σ = 0.54) × 10¹⁶ cm⁻³, compared with 4.64 (θ = 1.26) × 10¹⁶ cm⁻³ for the same composition layers grown on CdTe substrates.     

Shallow-Etch Mesa Isolation of Graded-Bandgap “W”-Structured Type II Superlattice Photodiodes

Shallow-etch mesa isolation (SEMI) of graded-bandgap “W”-structured type II superlattice (GGW) infrared photodiodes provides a powerful means for reducing excess dark currents due to surface and bulk junction related processes, and it is particularly well suited for focal-plane array fabrication. In the n-on-p GGW photodiode structure the energy gap is increased in a series of steps from that of the lightly p-type infrared-absorbing region to a value typically two to three times larger. The wider gap levels off about 10 nm short of the doping-defined junction, and continues for another 0.25 μm into the heavily n-doped cathode before the structure is terminated by an n ⁺-doped InAs top cap layer. The increased bandgap in the high-field region near the junction helps to strongly suppress both bulk tunneling and generation–recombination (G–R) current by imposing a much larger tunneling barrier and exponentially lowering the intrinsic carrier concentration. The SEMI approach takes further advantage of the graded structure by exposing only the widest-gap layers on etched surfaces. This lowers surface recombination and trap-assisted tunneling in much the same way as the GGW suppresses these processes in the bulk. Using SEMI, individual photodiodes are defined using a shallow etch that typically terminates only 10 nm to 20 nm past the junction, which is sufficient to isolate neighboring pixels while leaving the narrow-gap absorber layer buried 100 nm to 200 nm below the surface. This provides for separate optimization of the photodiode’s electrical and optical area. The area of the junction can be reduced to a fraction of that of the pixel, lowering bulk junction current, while maintaining 100% optical fill factor with the undisturbed absorber layer. Finally, with the elimination of deep, high-aspect-ratio trenches, SEMI simplifies array fabrication. We report herein results from SEMI-processed GGW devices, including large-area discrete photodiodes, mini-arrays, and a focal-plane array. Current–voltage data show strong suppression of side-wall leakage relative to that for more deeply etched devices, as well as scaling of dark current with junction area without loss of quantum efficiency.     

Transgenic animals in toxicology

Recent advances have been made in the characterization of a number of transgenic animal models. These animal models have provided a powerful toxicological tool for studying in vivo chemical effects and have increased our understanding of the role of specific genetic alterations as predisposing factors for chemical carcinogenesis. The goal of this symposium was to introduce the development of transgenic animals and the utilization of transgenics in toxicology research focusing on understanding tissue-specific mutation, chemical effects, and cancer. The production of transgenic animals, including gene insertions and gene knockouts, and the utilization of transgenic technology for studying multistage carcinogenesis and tumor suppressor genes are described. Data on the application and implications of transgenics as a genetic endpoint are also discussed. The use of transgenic animals in toxicology should improve our understanding of the role of specific genetic alterations in the carcinogenic process and lead to improved estimations of human health risks.