The World robot summit disaster robotics category – achievements of the 2018 preliminary competition

The World Robot Summit is a robot Olympics and aims to be held in a different country every four years from 2020. The concept of the Plant Disaster Prevention challenge is daily inspections, checks, and emergency response in industrial plants, and in this competition, robots must carry out these types of missions in a mock-up plant. The concept of the Tunnel Disaster Response and Recovery challenge is emergency response to tunnel disasters, and is a simulation competition whereby teams compete to show their ability to deal with disasters, by collecting information and removing debris. The Standard Disaster Robotics challenge assesses, in the form of a contest, the standard performance levels of a robot that are necessary for disaster prevention and emergency response. The World Robot Summit Preliminary Competition was held at Tokyo Big Sight in October 2018, and 36 teams participated in the Disaster Robotics Category. UGVs and UAVs contended the merits of new technology for solving complex problems, using core technologies such as mobility, sensing, recognition, performing operations, human interface, autonomous intelligence etc., as well as system integration and implementation of strategies for completing missions, gaining high-level results.     

Active sites of Cu-ZSM-5 for the decomposition of acrylonitrile

The catalytic decomposition of acrylonitrile (AN) over Cu-ZSM-5 prepared with various Cu loadings was investigated. AN conversion, during which the nitrogen atoms in AN were mainly converted to N₂, increased as Cu loading increased. N₂ selectivities as high as 90–95% were attained. X-ray diffraction measurements (XRD) and temperature-programmed reduction by H₂ (H₂-TPR) showed the existence of bulk CuO in Cu-ZSM-5 with a Cu loading of 6.4 wt% and the existence of highly dispersed CuO in Cu-ZSM-5 with a Cu loading of 3.3 wt%. Electron spin resonance measurements revealed that Cu-ZSM-5 contains three forms of isolated Cu²⁺ ions (square-planar, square-pyramidal, and distorted square-pyramidal). The H₂-TPR results suggested that in Cu-ZSM-5 with a Cu loading of 2.9 wt% and below, Cu⁺ existed even after oxidizing pretreatment. The activity of AN decomposition over Cu/SiO₂ suggested that CuO could form N₂, but, independent of the CuO dispersion, nitrogen oxides (NO_x) were formed above 350 °C. Cu⁺ and the square-pyramidal and distorted square-pyramidal forms of Cu²⁺ showed low activity for AN decomposition. Temperature-programmed desorption of NH₃ suggested that N₂ formation from NH₃ proceeded on Cu²⁺, resulting in the formation of Cu⁺. The Cu⁺ ions were oxidized to Cu²⁺ at around 300 °C. Thus, high N₂ selectivity over Cu-ZSM-5 with a wide range of temperature was probably attained by the reaction over the square-planar Cu²⁺, which can be reversibly reduced and oxidized.     

A new write/erase method to improve the read disturbcharacteristics based on the decay phenomena of stress leakage currentfor flash memories

This paper describes a new write/erase method for flash memory to improve the read disturb characteristics by means of drastically reducing the stress leakage current in the tunnel oxide. This new write/erase operation method is based on the newly discovered three decay characteristics of the stress leakage current. The features of the proposed write/erase method are as follows: 1) the polarity of the additional pulse after applying write/erase pulse is the same as that of the control gate voltage in the read operation; 2) the voltage of the additional pulse is higher than that of a control gate in a read operation, and lower than that of a control gate in a write operation; and 3) an additional pulse is applied to the control gate just after a completion of the write/erase operation. With the proposed write/erase method, the degradation of the read disturb life time after 10⁶ write/erase cycles can be drastically reduced by 50% in comparison with the conventional bipolarity write/erase method used for NAND type flash memory. Furthermore, the degradation can he drastically reduced by 90% in comparison with the conventional unipolarity write/erase method fur NOR-, AND-, and DINOR-type flash memory. This proposed write/erase operation method has superior potential for applications to 256 Mb flash memories and beyond     

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (R_s) to increase at large drain bias voltages. The increase in R_s can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (R_d) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of R_s should be considered. It is also found that a deep gate recess suppresses the increase in R_d after long-term stressing.     

Fracture toughness measurement with fatigue-precracked single edge-notched beam specimens of WC-Co hard metal

The plain-strain fracture toughness of WC-8%Co hard metal, K _IC, was measured using single edge-notched beam (SENB) specimens with fatigue precrack. The fatigue precrack was introduced with compressive fatigue cycling in four-point bending at room temperature. Since stable fatigue-crack propagation was obtained from the notch tip, it was easy to control the fatigue-precrack length. A reasonable K _IC value of 13.3 MPa m^1/2 was obtained with the fatigue-precracked SENB specimens in four-point bending. The compressive fatigue-precracking technique in four-point bending was simple and convenient, and is therefore applicable to precracking in a variety of brittle materials prior to fracture-toughness measurements.     

Sinterability and properties of Ti(N1−x,O x ) y -(V,Ta)C-Ni sintered alloys having a golden colour

The effect of oxygen and carbide addition on the sinterability of TiN _y (0.42<y<1)-Ni alloys, in which part of the nitrogen is replaced by oxygen was investigated. It was found that sinterability increased as the oxygen and carbide content increased, but the strength of the resultant sintered alloys was significantly reduced due to the presence of Ni₃Ti and Ti₂O₃ phases when the oxygen content exceeded 50 mol %. The sintered alloy with the highest hardness was found whenx=0.7,y=0.78 and the (V,Ta)C content was 18% by weight and this alloy was characterized by having a low density, good corrosion resistance and the colour of gold.     

Granular Reasoning Using Zooming In & Out: Part 2. Aristotle's Categorical Syllogism

The concept of granular computing is applied to Aristotle's categorical syllogism. Such kind of reasoning is called granular reasoning in this paper. For the purpose, two operations called zooming in & out are introduced to reconstruct granules of possible worlds.     

Skew simulation of a paper transferred by rubber rollers in printers

A skew of a paper transferred by rubber rollers in printers is simulated by FEM software. Effects of an imbalance of preload, an imbalance distribution of coefficient of friction and a front tension on the paper skew are investigated and how to determine the skew direction are shown. A simulation model is composed of a feed roller, a preload roller and a paper. The feed roller is rotated forcibly by a certain degree at every calculation step and a deformation, displacement and strain of the paper and rollers are calculated. A series of calculation results is shown as a motion simulation. The results show that the paper skews to the smaller preload side, to the smaller coefficient of friction side, or to the opposite side of the front tension. Further, effects of a skew prevention guide plate is simulated.     

NiCoFe/C cathode electrocatalysts for direct ethanol fuel cells

A direct ethanol fuel cell (DEFC), which is less prone to ethanol crossover, is reported. The cell consists of PtRu/C catalyst as the anode, Nafion^® 117 membrane, and Ni–Co–Fe (NCF) composite catalyst as the cathode. The NCF catalyst was synthesized by mixing Ni, Co, and Fe complexes into a polymer matrix (melamine-formaldehyde resins), followed by heating the mixture at 800 °C under inert atmosphere. TEM and EDX experiments suggest that the NCF catalyst has alloy structures of Ni, Co and Fe. The catalytic activity of the NCF catalyst for the oxygen reduction reaction (ORR) was compared with that of commercially available Pt/C (CAP) catalyst at different ethanol concentrations. The decrease in open circuit voltage (V_oc) of the DEFC equipped with the NCF catalysts was less than that of CAP catalyst at higher ethanol concentrations. The NCF catalyst was less prone to ethanol oxidation at cathode even when ethanol crossover occurred through the Nafion^®117 film, which prevents voltage drop at the cathode. However, the CAP catalyst did oxidize ethanol at the cathode and caused a decrease in voltage at higher ethanol concentrations.     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.