Noise modeling for RF CMOS circuit simulation

The RF noise in 0.18-/spl mu/m CMOS technology has been measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the drain current noise for short-channel MOSFETs. The gate current noise on the other hand is more significantly enhanced, which is explained by the effects of the gate resistance. The experimental results are modeled with a nonquasi-static RF model, based on channel segmentation, which is capable of predicting both drain and gate current noise accurately. Experimental evidence is shown for two additional noise mechanisms: 1) avalanche noise associated with the avalanche current from drain to bulk and 2) shot noise in the direct-tunneling gate leakage current. Additionally, we show low-frequency noise measurements, which strongly point toward an explanation of the 1/f noise based on carrier trapping, not only in n-channel MOSFETs, but also in p-channel MOSFETs.     

Noise figure of saturated 1310-nm polarization insensitive multiple-quantum-well optical amplifiers

The noise figure degradation due to saturation by amplified spontaneous emission of high-gain 1310-nm polarization insensitive multiple-quantum-well optical amplifiers has been investigated systematically by studying amplifiers of different lengths. It is found that the intrinsic noise figure of 4 dB of a device with 20-dB single-pass gain is degraded to about 5 dB for a device having 36-dB single-pass gain. This degradation in noise figure is very modest, compared to results reported earlier for semiconductor optical amplifiers with bulk-gain media, illustrating the benefits of using a quantum-well gain medium in semiconductor optical amplifiers.     

An industrial view on compact modeling

Compact modeling is an area that gets more and more mature. Collaborations and standardization efforts have emerged. In this paper we present some special requirements that are important when constructing physics-based compact models. We will substantiate our statements on two recent examples, an inductor model and a MOSFET model.     

Low-Loss Patterned Ground Shield Interconnect Transmission Lines in Advanced IC Processes

In this paper, we provide an extensive experimental and theoretical study of the benefits of patterned ground shield interconnect transmission lines over more conventional layouts in advanced integrated-circuit processes. As part of this experimental work, we present the first comparative study taken on truly differential transmission line test structures. Our experimental results obtained on transmission lines with patterned ground shields are compared against a predictive compact equivalent-circuit model. This model employs exact closed-form expressions for the inductances, and describes key performance figures such as characteristic impedance and attenuation loss with excellent accuracy     

A single-pass single-amplifier polarization-insensitivesemiconductor laser amplifier configuration

A novel single-pass single-amplifier polarization-insensitive optical amplifier configuration is proposed and used to solve the inherent polarization sensitivity of a compressively strained multiple-quantum-well (MQW) laser amplifier. The polarization-independent operation is obtained by single-passing the light with the preferred polarization through the amplifier chip. Therefore the light is decomposed into two mutually orthogonal polarizations and sent in opposite directions through the semiconductor laser amplifier. An analysis is presented that shows that the residual gain ripple and polarization sensitivity are sufficiently reduced when the residual facet reflectivities of the traveling-wave semiconductor laser amplifier are in the range below 10^-4     

High-performance λ=1.3 μm InGaAsP-InP strained-layerquantum well lasers

Compressively and tensile strained InGaAsP-InP MQW Fabry-Perot and distributed feedback lasers emitting at 1.3-μm wavelength are reported. For both signs of the strain, improved device performance over bulk InGaAsP and lattice-matched InGaAsP-InP MQW lasers was observed. Tensile strained MQW lasers show TM polarized emission, and with one facet high reflectivity (HR) coated the threshold currents are 6.4 and 12 mA at 20 and 60°C, respectively. At 100°C, over 20-mW output power is obtained from 250-μm-cavity length lasers, and HR-coated lasers show minimum thresholds as low as 6.8 mA. Compressively strained InGaAsP-InP MQW lasers show improved differential efficiencies, CW threshold currents as low as 1.3 and 2.5 mA for HR-coated single- and multiple quantum well active layers, respectively, and record CW output powers as high as 380 mW for HR-AR coated devices. For both signs of the strain, strain-compensation applied by oppositely strained barrier and separate confinement layers, results in higher intensity, narrower-linewidth photoluminescence emissions, and reduced threshold currents. Furthermore, the strain compensation is shown to be effective for improving the reliability of strained MQW structures with the quantum wells grown near the critical thickness. Linewidth enhancement factors as low as 2 at the lasing wavelength were measured for both types of strain. Distributed feedback lasers employing either compressively or tensile strained InGaAsP-InP MQW active layers both emit single-mode output powers of over 80 mW and show narrow linewidths of 500 kHz     

27-dB gain unidirectional 1300-nm polarization-insensitive multiplequantum well laser amplifier module

An unidirectional polarization-insensitive multiple quantum well laser amplifier module for the 1300-nm window with a record high gain of 27 dB and a 3-dB saturation output power of 13 dBm is demonstrated. The module gain has a 3-dB width exceeding 60 nm and shows a typical polarization sensitivity and gain ripple as low as 0.3 dB. To provide immunity for backscattered or reflected light, polarization independent optical isolators were inserted in the input and output coupling optics of the package. A practical optical amplifier module for the 1300-nm window is very desirable, because most of the presently installed fiber has its zero dispersion wavelength around 1310 mm, while much of the older fiber often only can be operated around this wavelength     

1310-nm DBR-type MQW gain-clamped semiconductor optical amplifiers with AM-CATV-grade linearity

A 1310-nm gain clamped semiconductor optical amplifier with amplitude modulation CATV-grade linearity at an output power of 8 mW is demonstrated for the first time. The InGaAsP multiquantum-well laser amplifier is equipped with distributed Bragg reflectors at each end to supply the feedback necessary for gain clamping. The TE optical gain of 21.3 dB is measured to be constant within 0.1 dB up to 25-mW signal output power. Electrical signal distortion experiments are presented to demonstrate the linearity of the device.     

RF capacitance-voltage characterization of MOSFETs with high leakage dielectrics

We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.     

Test structure design considerations for RF-CV measurements on leaky dielectrics

We present an MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.