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Tronciu V.Z. Yamada M. Ohno T. Ito S. Kawakami T. Taneya M. 《Quantum Electronics, IEEE Journal of》2003,39(12):1509-1514
Room-temperature operation of self-pulsating InGaN lasers was obtained at a wavelength of 395 nm. The laser structure consists of a multiquantum-well InGaN active layer and a p-type InGaN single-quantum-well saturable absorber. The frequency range of the self-pulsation was from 1.6 to 2.9 GHz. The experimental results were well explained with our theoretical analysis. We found that features of the saturable absorber strongly affect the self-pulsation. Influence of device and material parameters on the laser dynamics was also investigated. 相似文献
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