[110]-surface strained-SOI CMOS devices

We have newly developed [110]-surface strained-silicon-on-insulator (SOI) n- and p-MOSFETs on [110]-surface relaxed-SiGe-on-insulator substrates with the Ge content of 25%, fabricated by applying the Ge condensation technique to SiGe layers grown on [110]-surface SOI wafers. We have demonstrated that the electron and the hole mobility enhancement of [110]-surface strained-SOI devices amounts to 23% and 50%, respectively, against the mobilities of [110]-surface unstrained MOSFETs. As a result, the electron and the hole mobility ratios of [110]-surface strained-SOI MOSFETs to the universal mobility of (100)-surface bulk-MOSFETs increase up to 81% and 203%, respectively. Therefore, the current drive imbalance between n- and p-MOS can be reduced. Moreover, both the electron and the hole mobilities of the [110]-surface strained-SOIs strongly depend on the drain current flow direction, which is qualitatively explained by the anisotropic effective mass characteristics of the carriers on a [110]-surface Si. As a result, the [110]-surface strained-SOI technology with optimization of the current flow directions of n- and p-MOS is promising for realizing higher speed scaled CMOS.     

Intramolecular triplet energy migration in poly(2-vinylnaphthalene) and poly(naphthylalkyl methacrylate)s in solid solution: Effects of side chain length

Summary The effect of side chain length on intramolecular triplet energy migration of naphthalene containing polymers was investigated by a delayed fluorescence (DF) spectroscopy for the solid solution of the polymers. The degree of triplet energy migration depends strongly on whether the chromophores are directly attached to the main chain or not.     

Temperature and pressure effects on supercritical CO2 extraction of tomato seed oil

Tomato seed oil was extracted with supercritical carbon dioxide in a semibatch-flow extractor within the temperature range 313–343 K and the pressure range 10.8–24.5MPa. The extraction rates increased with pressure, but decreased with temperature increase because of the variation in solvent density and resultant differences in oil solubility. The fatty acid composition of the extracted oil was similar to that of soybean oil.     

Occurrence of heterogeneity of N-linked oligosaccharides attached to sycamore (Acer pseudoplatanus L.) laccase after excretion

The N-linked oligosaccharide moieties of sycamore (Acer pseudoplatanus L.) laccase are known to be highly heterogeneous. We confirmed that this oligosaccharide heterogeneity was caused not only during the oligosaccharide biosynthesis in Golgi apparatus, but also after the excretion of laccase protein into a culture medium. The culture medium for the sycamore cells (Acer pseudoplatanus L.) contained beta-galactosidase, alpha-L-fucosidase, beta-N-acetylglucosaminidase, alpha-mannosidase and beta-xylosidase activities. We showed that the largest sugar chain in laccase, oligosaccharide F, [formula: see text] was degraded to [formula: see text] by a crude exoglycosidase mixture in the culture medium.     

High-performance polymer alloys of polybenzoxazine and bismaleimide

Two series of high-performance polymer alloys were prepared by mixing typical benzoxine monomers, 3-phenyl-3,4-dihydro-2H-1,3-benzoxazine (P-a) or 6,6-(1-methylethyliden)-bis-(3,4-dihydro-3-phenyl-2H-1,3-benzoxazine) (B-a), with a typical bismaleimide, 4,4-bismaleimidodiphenyl methane by various ratios followed by thermal treatment up to 240 °C. DSC and IR of the alloys were examined to follow the curing reaction. These analyses showed that the obtained polymer alloys are AB co-cross-linked polymer networks through the formation of ether linkage between the hydroxyl group of polybenoxazine and the double bond of bismaleimide. Viscoelastic analysis and softening temperature measurement revealed that the polymer alloys have much higher glass transition temperatures than those of each homopolymer. The thermal stability also increased with the increase of bismaleimide content as evidenced by TGA.     

Monolithic rat-race mixers for millimeter waves

In this paper, we report on fully monolithic millimeter-wave Schottky-barrier diode (SBD) down-converters with an IF amplifier using heterojunction bipolar transistors (HBT's). A rat-race circuit is used for the mixer, and is analyzed using a harmonic-balance simulator. The measured conversion gain and the isolation are 7.1 and 29 dB in the V-band design, and 8.0 and 25 dB in the W-band design, respectively. The conversion gains are matched well with the circuit simulation