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An InP/InGaAsP/InGaAs avalanche photodiode with an effective guard-ring structure has been successfully fabricated. The diode has a planar structure with an n-InP layer buried by n?-InP in the multiplication region The structure has been grown on a (111)A-oriented InP substrate by two-step growth of liquid-phase epitaxy. Prior to the second growth of n?-InP a meltback technique was used to reduce dark current. 相似文献
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InGaAsP l.e.d.s emitting at 1.24 ?m are fabricated. Their characteristics at 100 mA are as follows: output power coupled into the fibre of 77 ?W, a spectral halfwidth of 0.1 ?m and a cutoff frequency of 70 MHz. The cutoff frequencies are proportional to the square root of the bias current. The recombination coefficient is estimated to be 5 × 10?10cm3/s 相似文献
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