Zinc Diffusion into InP via a Narrow Gap from a Planar Zn<Subscript>3</Subscript>P<Subscript>2</Subscript>-Based Source

An original technology of zinc diffusion into InP via a narrow gap is described, which allows reproducible formation of p–n junctions with preset depth of doping and retained surface morphology of the doped layers. Using the proposed method, desired charge carrier distribution profiles in Zn-doped InP layers were obtained. It has been experimentally confirmed that the method of cross-sectional scanning electron microscopy allows to precision measure of the zinc diffusion depth.     

Reasons of Crystallite Formation during the Self-Catalyzed GaAs Nanowire Growth

Semiconductors - During the self-catalyzed GaAs nanowire growth formation of parasitic GaAs crystallites is observed. The reasons for crystallite formation are explained on the base of Monte Carlo...     

Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

Semiconductors - The &nbsp;possibility &nbsp;of forming a strained pseudomorphous quantum well (QW) consisting of a InxGa1 – xAsyP1 – y quaternary alloy upon the deposition of...     

Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy

The interaction of the GaSb(001) surface with fluxes of As₂, As₄, and Sb₄ molecules is studied using reflection high-energy electron diffraction. It is shown that As₂ molecules interact with a GaSb surface predominantly by an exchange mechanism, and As₄ molecules by the vacancy mechanism. It is established that for the reproducible generation of In-Sb heterointerfaces in InAs/GaSb superlattices, one needs to use a flux of As₄ molecules rather than As₂ molecules.     

A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates

Technical Physics Letters - GaAs nanowires (NWs) were generated on the surface of GaAs(111)B and GaAs(100) substrates from molecular fluxes by the self-catalytic growth method. A mask for NW growth...     

Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

The influence of dislocation filters based on low-temperature layers (LT) of GaAs and postgrowth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of threading dislocations and surface roughness. Post-growth annealing at a temperature of 650 °C reduces the concentration of nonradiative recombination centers in GaAs/Si layers to a level close to the level in GaAs layers grown on a matched substrate.     

Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates

Semiconductors - GaSb films are grown by molecular-beam epitaxy using AlSb/As/Si transition layers on vicinal Si(001) substrates miscuted by 6° in (111) plane direction. The effect of GaSb...     

The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy

Semiconductors - The effect of a substrate misorientation degree from a singular face on the composition and morphology of layers of InAsxSb1 –x solid solutions obtained by molecular-beam...     

Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing

Semiconductors - The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined...