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Yen Thi Hai Pham Mingzu Liu Valery Ortiz Jimenez Zhuohang Yu Vijaysankar Kalappattil Fu Zhang Ke Wang Teague Williams Mauricio Terrones Manh-Huong Phan 《Advanced materials (Deerfield Beach, Fla.)》2020,32(45):2003607
The outstanding optoelectronic and valleytronic properties of transition metal dichalcogenides (TMDs) have triggered intense research efforts by the scientific community. An alternative to induce long-range ferromagnetism (FM) in TMDs is by introducing magnetic dopants to form a dilute magnetic semiconductor. Enhancing ferromagnetism in these semiconductors not only represents a key step toward modern TMD-based spintronics, but also enables exploration of new and exciting dimensionality-driven magnetic phenomena. To this end, tunable ferromagnetism at room temperature and a thermally induced spin flip (TISF) in monolayers of V-doped WSe2 are shown. As vanadium concentration increases, the saturation magnetization increases, which is optimal at ≈4 at% vanadium; the highest doping level ever achieved for V-doped WSe2 monolayers. The TISF occurs at ≈175 K and becomes more pronounced upon increasing the temperature toward room temperature. The TISF can be manipulated by changing the vanadium concentration. The TISF is attributed to the magnetic-field- and temperature-dependent flipping of the nearest W-site magnetic moments that are antiferromagnetically coupled to the V magnetic moments in the ground state. This is fully supported by a recent spin-polarized density functional theory study. The findings pave the way for the development of novel spintronic and valleytronic nanodevices and stimulate further research. 相似文献
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Jinjun Ding Chuanpu Liu Yuejie Zhang Vijaysankar Kalappattil Rui Yu Uppalaiah Erugu Jinke Tang Haifeng Ding Hua Chen Mingzhong Wu 《Advanced functional materials》2021,31(11):2008411
This article reports damping enhancement in a ferromagnetic NiFe thin film due to an adjacent α-Sn thin film. Ferromagnetic resonance studies show that an α-Sn film separated from a NiFe film by an ultrathin Ag spacer can cause an extra damping in the NiFe film that is three times bigger than the intrinsic damping of the NiFe film. Such an extra damping is absent in structures where the α-Sn film interfaces directly with a NiFe film, or is replaced by a β-Sn film. The data suggest that the extra damping is associated with topologically nontrivial surface states in the topological Dirac semimetal phase of the α-Sn film. This work suggests that, like topological insulators, topological Dirac semimetal α-Sn may have promising applications in spintronics. 相似文献
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