排序方式: 共有26条查询结果,搜索用时 15 毫秒
1.
R. M. Balagula M. Ya. Vinnichenko I. S. Makhov A. N. Sofronov D. A. Firsov L. E. Vorobjev 《Semiconductors》2017,51(3):363-366
The modulation of polarized radiation by GaAs/AlGaAs structures with tunnel-coupled double quantum wells in a strong lateral electric field is studied. The spectra of the variation in the refractive index under a lateral electric field in the vicinity of the intersubband resonance are experimentally investigated. 相似文献
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L. E. Vorobjev M. Ya. Vinnichenko D. A. Firsov V. L. Zerova V. Yu. Panevin A. N. Sofronov P. Thumrongsilapa V. M. Ustinov A. E. Zhukov A. P. Vasiljev L. Shterengas G. Kipshidze T. Hosoda G. Belenky 《Semiconductors》2010,44(11):1402-1405
Carrier heating in GaAs/AlGaAs quantum wells (QWs) under optical interband pumping in the spontaneous-emission mode has been studied. The electron temperature was determined as a function of the pumping intensity. The effect of the electric field on the photoluminescence spectrum was examined. The change in the carrier concentration with the drive current in the spontaneous- and stimulated-emission modes in InGaAsSb/InAlGaAsSb QWs was determined from electroluminescence spectra. The rise in the temperature of hot carriers, which results in the increase in the carrier concentration with the drive current, was roughly estimated. 相似文献
3.
Babichev A. V. Pashnev D. A. Gladyshev A. G. Kurochkin A. S. Kolodeznyi E. S. Karachinsky L. Ya. Novikov I. I. Denisov D. V. Boulley L. Firsov D. A. Vorobjev L. E. Pikhtin N. A. Bousseksou A. Egorov A. Yu. 《Technical Physics Letters》2019,45(11):1136-1139
Technical Physics Letters - Spectral redistribution of the intensity of short- and long-wavelength emission components within gain bandwidth of a 7- to 8-μm quantum-cascade laser under the... 相似文献
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L. E. Vorobjev D. A. Firsov V. A. Shalygin V. Yu. Panevin A. N. Sofronov A. I. Yakimov A. V. Dvurechenskii A. A. Tonkikh P. Werner 《Semiconductors》2012,46(12):1529-1533
The results of studies of the optical absorption spectra in Ge/Si quantum dot structures in the mid-infrared region are reported. Two types of structures different in terms of the method used for quantum dot formation and in terms of barrier layer thickness are explored. The photoinduced absorption associated with the nonequilibrium population of hole states and optical absorption in structures doped to different levels are investigated. Specific features that are associated with occupation of the ground and excited states of quantum dots and exhibit a polarization dependence are observed. From the experimental data, the energy spectrum of holes is determined for structures of both types. 相似文献
6.
Vorobjev G Sokolov A Thorn A Herfurth F Kester O Quint W Stöhlker T Zschornack G 《The Review of scientific instruments》2012,83(5):053302
For the first time, a small room-temperature electron beam ion trap (EBIT), operated with permanent magnets, was successfully used for charge breeding experiments. The relatively low magnetic field of this EBIT does not contribute to the capture of the ions; single-charged ions are only caught by the space charge potential of the electron beam. An over-barrier injection method was used to fill the EBIT's electrostatic trap with externally produced, single-charged potassium ions. Charge states as high as K(19+) were reached after about a 3 s breeding time. The capture and breeding efficiencies up to 0.016(4)% for K(17+) have been measured. 相似文献
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D. A. Firsov V. A. Shalygin V. Yu. Panevin G. A. Melentyev A. N. Sofronov L. E. Vorobjev A. V. Andrianov A. O. Zakhar’in V. S. Mikhrin A. P. Vasil’ev A. E. Zhukov L. V. Gavrilenko V. I. Gavrilenko A. V. Antonov V. Ya. Aleshkin 《Semiconductors》2010,44(11):1394-1397
Terahertz emission spectra in a longitudinal electric field and lateral photoconductivity spectra under terahertz illumination have been studied in structures with GaAs/AlGaAs quantum wells (QWs). It is shown that the spectra contain features associated with electron transitions involving resonant impurity states related to the second quantum-well subband. Calculations of the energy spectrum of impurity states and matrix elements of optical transitions made by taking into account various positions of the impurity relative to the QW center confirm the assumptions made. 相似文献
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A. V. Babichev A. Bousseksou N. A. Pikhtin I. S. Tarasov E. V. Nikitina A. N. Sofronov D. A. Firsov L. E. Vorobjev I. I. Novikov L. Ya. Karachinsky A. Yu. Egorov 《Semiconductors》2016,50(10):1299-1303
The room-temperature generation of multiperiod quantum-cascade lasers (QCL) at a wavelength of 5.8 μm in the pulsed mode is demonstrated. The heterostructure of a quantum-cascade laser based on a heterojunction of InGaAs/InAlAs alloys is grown by molecular-beam epitaxy and incorporates 60 identical cascades. The threshold current density of the stripe laser 1.4 mm long and 22 μm wide is ~4.8 kA/cm2 at a temperature of 303 K. The maximum power of the optical-radiation output from one QCL face, recorded by a detector, is 88 mW. The actual optical-power output from one QCL face is no less than 150 mW. The results obtained and possible ways of optimizing the structure of the developed quantum-cascade lasers are discussed. 相似文献
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S. A. Tarasenko E. L. Ivchenko V. V. Bel''kov S. D. Ganichev D. Schowalter P. Schneider M. Sollinger W. Prettl V. M. Ustinov A. E. Zhukov L. E. Vorobjev 《Journal of Superconductivity》2003,16(2):419-422
It is shown that absorption of circularly polarized infrared radiation achieved by inter-subband and intra-subband (Drude-like) transitions results in a monopolar spin orientation of free carriers. The monopolar spin polarization in zinc-blende-based quantum wells (QWs) is demonstrated by the observation of the spin-galvanic and circular photogalvanic effects. It is shown that monopolar spin orientation in n-type QWs becomes possible if an admixture of valence band states to the conduction band wave function and the spin–orbit splitting of the valence band are taken into account. 相似文献
10.
R. M. Balagula M. Ya. Vinnichenko I. S. Makhov D. A. Firsov L. E. Vorobjev 《Semiconductors》2016,50(11):1425-1430
The effect of a lateral electric field on the mid-infrared absorption and interband photoluminescence spectra in double tunnel-coupled GaAs/AlGaAs quantum wells is studied. The results obtained are explained by the redistribution of hot electrons between quantum wells and changes in the space charge in the structure. The hot carrier temperature is determined by analyzing the intersubband light absorption and interband photoluminescence modulation spectra under strong lateral electric fields. 相似文献