Electron traps created in gate oxides by Fowler–Nordheim injections

Two types of electron traps, donor-like and acceptor-like, are created in the gate oxide of metal-oxide-semiconductor capacitors by Fowler–Nordheim electron injections. Electrical properties (areal density, capture cross-section, centroid) of each type of trap are determined by using the avalanche electron injection method and by combining capacitance–voltage and current–voltage measurements. These properties are measured with regard to the Fowler–Nordheim fluence up to breakdown and for both injection modes (electrons injected either from the gate or from the substrate of capacitors).     

Alterations in Serum Polyunsaturated Fatty Acids and Eicosanoids in Patients with Mild to Moderate Chronic Obstructive Pulmonary Disease (COPD)

Smoking is a major risk factor for several diseases including chronic obstructive pulmonary disease (COPD). To better understand the systemic effects of cigarette smoke exposure and mild to moderate COPD—and to support future biomarker development—we profiled the serum lipidomes of healthy smokers, smokers with mild to moderate COPD (GOLD stages 1 and 2), former smokers, and never-smokers (n = 40 per group) (ClinicalTrials.gov registration: {"type":"clinical-trial","attrs":{"text":"NCT01780298","term_id":"NCT01780298"}}NCT01780298). Serum lipidome profiling was conducted with untargeted and targeted mass spectrometry-based lipidomics. Guided by weighted lipid co-expression network analysis, we identified three main trends comparing smokers, especially those with COPD, with non-smokers: a general increase in glycero(phospho)lipids, including triglycerols; changes in fatty acid desaturation (decrease in ω-3 polyunsaturated fatty acids, and an increase in monounsaturated fatty acids); and an imbalance in eicosanoids (increase in 11,12- and 14,15-DHETs (dihydroxyeicosatrienoic acids), and a decrease in 9- and 13-HODEs (hydroxyoctadecadienoic acids)). The lipidome profiles supported classification of study subjects as smokers or non-smokers, but were not sufficient to distinguish between smokers with and without COPD. Overall, our study yielded further insights into the complex interplay between smoke exposure, lung disease, and systemic alterations in serum lipid profiles.     

Nanometer-scale organic thin film transistors from self-assembled monolayers

A survey of the most interesting results on nanometer-scale organic thin film transistors (nano-OTFT) is presented. Additionally, we discuss our recent results on the properties of end-group functionalized organic self-assembled monolayers and on their use in the fabrication of nanometer-scale field-effect transistors. Nanometer-scale organic transistors (channel length 30 nm) were fabricated, with a self-assembled monolayer as gate insulator. The carrier transport in these transistors, as a function of the channel length, was investigated, and a transition from a dispersive to a ballistic transport at a channel length of 200 nm was observed. On a molecular scale, alkyl monolayers functionalized at their omega-ends by aromatic moieties were prepared. A high anisotropic conductivity in molecular insulator/semiconductor heterostructures of monolayer thickness was observed. These molecular architectures provide a basis for the building blocks of molecular transistors.     

Low‐Operating‐Voltage Organic Transistors Made of Bifunctional Self‐Assembled Monolayers

Self‐assembled monolayers (SAMs) are molecular assemblies that spontaneously form on an appropriate substrate dipped into a solution of an active surfactant in an organic solvent. Organic field‐effect transistors are described, built on an SAM made of bifunctional molecules comprising a short alkyl chain linked to an oligothiophene moiety that acts as the active semiconductor. The SAM is deposited on a thin oxide layer (alumina or silica) that serves as a gate insulator. Platinum–titanium source and drain electrodes (either top‐ or bottom‐contact configuration) are patterned by using electron‐beam (e‐beam) lithography, with a channel length ranging between 20 and 1000 nm. In most cases, ill‐defined current–voltage (I–V) curves are recorded, attributed to a poor electrical contact between platinum and the oligothiophene moiety. However, a few devices offer well‐defined curves with a clear saturation, thus allowing an estimation of the mobility: 0.0035 cm² V^–1 s^–1 for quaterthiophene and 8 × 10^–4 cm² V^–1 s^–1 for terthiophene. In the first case, the on–off ratio reaches 1800 at a gate voltage of –2 V. Interestingly, the device operates at room temperature and very low bias, which may open the way to applications where low consumption is required.     

A coupled study by floating-gate and charge-pumping techniques ofhot carrier-induced defects in submicrometer LDD n-MOSFET's

The creation of defects by hot-carrier effect in submicrometer (0.85-μm) LDD n-MOSFETs is analyzed by the floating-gate and the charge-pumping techniques. It is emphasized that the floating-gate technique is an attractive tool for characterizing the oxide traps located in the drain-gate overlap region, near the oxide spacer of the LDD structures. This work gives new insight into the creation of acceptorlike oxide traps which are electrically active only after electron injection phases. These defects are generated in the whole stress gate bias range (from V_d/8 to V_d) by hot-hole and/or hot-electron injections, and their generation rates (10^-9 and 10^-2 for electron and hole injections, respectively) are one decade greater than for the interface state generation. Two-dimensional simulations show that they are mainly responsible for the I_d-V_g degradation of the LDD MOSFETs, and that the trap concentrations deduced from charge-pumping experiments are consistent with the I _d-V_g degradation     

Self-assembled monolayers for electrode fabrication and efficient threshold voltage control of organic transistors with amorphous semiconductor layer

In this paper we show that thiolated self-assembled monolayers (SAMs) can be used to anchor source–drain gold electrodes on the substrate, leading to excellent electrical performances of the organic field-effect transistor (OFET) on a par with those using a standard electrode process. Using an amorphous semiconductor and a gate dielectric functionalized with SAMs bearing different dipole moments, we demonstrate that we can tune the threshold voltage alone, while keeping nearly unchanged the other electrical properties (hole carrier mobility, I_on/I_off ratio, subthreshold swing). This differs from previous studies for which SAMs functionalization induced significant changes in all the OFET electrical performances. This result opens doors to design organic circuits using reproducible amorphous semiconductor based OFETs for which only the threshold voltage can be tuned on demand.     

Nanotube transistors as direct probes of the trap dynamics at dielectric-organic interfaces of interest in organic electronics and solar cells

The high sensitivity of nanotube transistors is used for the first time as a probe to study charge dynamics at a dielectric/polymer (polythiophene) interface, an inorganic/organic junction of particular importance for organic solar cells, and organic field effect transistors (OFETs). A carbon nanotube field effect transistor is coated with a thin film of a photoconductive polymer and photoexcited so as to generate carriers in the structure. Comparison between devices using SiO2 and TiO2 as gate dielectric reveals the critical role of the dielectric and clearly elucidates the relative contributions of the polymer and the dielectric layers on the separation, trapping, and relaxation of photogenerated charges.