Single fundamental-mode output power exceeding 6 mW from VCSELs with a shallow surface relief

A single fundamental-mode output power of 6.5 mW was achieved from an 850-nm vertical-cavity surface-emitting laser (VCSEL) with a shallow surface relief, the highest single-mode power ever reported using this technique. The VCSELs were fabricated from epitaxial material grown to yield an antiphase reflection from the topmost layer. A circular surface relief, acting as a mode discriminator, was etched in the center to reduce the mirror loss for the fundamental mode. This "inverted" surface-relief technique offers relaxed etch depth control and, therefore, improves reproducibility and yield.     

Grazing-incidence iridescence from a butterfly wing

The Troides magellanus butterfly exhibits a specialized iridescence that is visible only when its hind wings are both illuminated and viewed at near-grazing incidence. The effect is due to the presence of a constrained bigrating structure in its wing scales that has been previously observed in only one other species of butterfly (Ancyluris meliboeus). However, whereas the Ancyluris presents wide-angle flickering iridescence, the Troides butterfly uses pigmentary coloration at all but a narrow tailored range of angles, producing a characteristic effect.     

A 0.2-W Heterostructure Barrier Varactor Frequency Tripler at 113 GHz

We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. The HBV device topology was designed for efficient thermal dissipation and high efficiency. To verify simulations, the device was flip-chip soldered onto embedding microstrip circuitry on an aluminum nitride substrate. This hybrid circuit was then mounted in a waveguide block without any movable tuners. From the resulting RF measurements, the maximum output power was 195 mW at 113 GHz, with a conversion efficiency of 15%. The measured 3-dB bandwidth was 1.5%     

Autoimmunity develops in lupus-prone NZB mice despite normal T cell tolerance

NZB mice spontaneously develop an autoimmune disease characterized by production of anti-RBC, -lymphocyte, and -ssDNA Abs. Evidence suggests that the NZB mouse strain has all of the immunologic defects required to produce lupus nephritis but lacks an MHC locus that allows pathogenic anti-dsDNA Ab production. The capacity to produce diverse autoantibodies in these mice raises the possibility that they possess a generalized defect in self-tolerance. To determine whether this defect is found within the T cell subset, we backcrossed a transgene encoding bovine insulin (BI) onto the NZB background. In nonautoimmune BALB/c mice, the BI transgene induces a profound but incomplete state of T cell tolerance mediated predominantly by clonal anergy. Comparison of tolerance in NZB and BALB/c BI-transgenic mice clearly demonstrated that NZB T cells were at least as tolerant to BI as BALB/c T cells. NZB BI-transgenic mice did not spontaneously produce anti-BI Abs, and following antigenic challenge, BI-specific Ab production was comparably reduced in both BI-transgenic NZB and BALB/c mice. Further, in vitro BI-specific T cell proliferation and cytokine secretion were appropriately decreased for primed lymph node and splenic T cells derived from NZB BI-transgenic relative to their nontransgenic counterparts. These data indicate that a generalized T cell tolerance defect does not underlie the autoimmune disease in NZB mice. Instead, we propose that the T cell-dependent production of pathogenic IgG autoantibodies in these mice arises from abnormal activation of T cells in the setting of normal but incomplete tolerance.     

Intramedullary tuberculoma: a case report

A fifty-year-old Portuguese man presented with a six-month history of low back pain, which initially was mechanical and slowly became inflammatory. Secondarily, he complained of right atypical sciatalgia. He did not report any fever, loss of weight, cough nor personal or familial history of tuberculosis. General examination was normal. Neurologic examination showed weakness of the extensors of the right leg, with a symmetric increased reflexes of the lower extremities suggesting a pyramidal syndrome without Babinski's sign. Laboratory data were normal as well as chest radiographs. Dorsolumbar gadolinium enhanced MRI revealed an intramedullary ringlike enhancing mass at T12 level. Lumbar puncture showed 11 WBC/mm3 (95 p. 100 lymphocytes), a normal protein and glucose content. PCR and culture for Mycobacterium tuberculosis were negative. Within a few days, he developed meningoencephalitis with fever, CSF examination revealed then 360 WBC/mm3 (65 p. 100 lymphocytes and 17 p. 100 neutrophils), a protein content of 7 g/l and a glucose level of 1.7 mmol/l. The clinical picture was then suggestive of tuberculosis and a specific therapy with rifampin, izoniazid, pyrazinamid, ethambutol and steroids was started. Clinical improvement and a second CSF culture that revealed one month later Mycobacterium tuberculosis complex confirmed this diagnosis. Ten months later, the patient was asymptomatic with a normal MRI. To our knowledge, this is the first total recovery of an intramedullary tuberculoma on medical therapy alone, confirmed by MRI normalization. We reviewed also 19 recent cases of tuberculomas in the literature, intending a therapeutic attitude when discovering an intramedullary ringlike enhancing mass on MRI.     

Performance characteristics of buried heterostructure VCSELs usingsemi-insulating GaInP:Fe regrowth

We have fabricated GaAs-AlGaAs buried heterostructure vertical cavity surface emitting lasers, emitting at 850 mm, using semi-insulating GaInP:Fe regrowth and investigated their static properties. Lasers of different size (10-21 μm) have threshold currents in the range 2.8-7.0 mA, and produce a maximum output power of 1.7-6.0 mW at room temperature. The variation of threshold current with device size shows that the leakage current at the regrowth interface accounts for a significant part of the injection current. In spite of this, a differential quantum efficiency in the range 20%-30% is obtained which indicates that the regrowth interface is smooth and does not introduce any significant scattering loss. Studies of the transverse mode properties suggest that the GaInP provides weak guiding, resulting in single mode operation up to an output power of 0.7 mW and a beam divergence of only 60 for lasers as large as 10 μm     

Fabrication and characterization of diffractive optical elements in InP for monolithic integration with surface-emitting components

We report on the fabrication and subsequent characterization of binary diffractive optical elements (DOE's) in InP for operation at 1.3 mum. Fresnel lenses of different focal lengths and a DOE that splits and focuses an incident beam into a 1 x 4 array of spots (optical fan-out) were fabricated. We realized the surface reliefs by patterning resist, using electron-beam lithography and etching with a chemically assisted ion beam, which produced well-defined patterns with smooth sidewalls and little if no surface roughness. The measured efficiency for the lenses was 36%. For the fan-out element the efficiency and the uniformity error were 26% and 30%, respectively. Spot sizes as small as 16 mum were measured.     

Sculpted-multilayer optical effects in two species of Papilio butterfly

The wing-scale microstructures associated with two species of Papilio butterfly are described and characterized. Despite close similarities in their structures, they do not exhibit analogous optical effects. With Papilio palinurus, deep modulations in its multilayering create bicolor reflectivity with strong polarization effects, and this leads to additive color mixing in certain visual systems. In contrast to this, Papilio ulysses features shallow multilayer modulation that produces monocolor reflectivity without significant polarization effects.     

Monolithic integration of continuous-relief diffractive structures with vertical-cavity surface-emitting lasers

In this work, we have studied the transfer of diffractive optical elements (DOEs), originally made in resist, into GaAs for monolithic integration with vertical-cavity surface-emitting lasers (VCSELs). The DOEs are blazed gratings and Fresnel lenses, and have been fabricated on the back surface of bottom emitting VCSELs using electron-beam lithography or replication by hot embossing in resist followed by a quick-dry etch step. Diffraction efficiency was measured to be 81% in the first order of diffraction for the blazed grating.     

Thermal constraints for heterostructure barrier varactors

Current research on heterostructure barrier varactors (HBVs) devotes much effort to the generation of very high power levels in the millimeter wave region. One way of increasing the power handling capacity of HBVs is to stack several barriers epitaxially. However, the small device dimensions lead to very high temperatures in the active layers, deteriorating the performance. We have derived analytical expressions and combined those with finite element simulations, and used the results to predict the maximum effective number of barriers for HBVs. The thermal model is also used to compare the peak temperature and power handling capacity of GaAs and InP-based HBVs. It is argued that InP-based devices may be inappropriate for high-power applications due to the poor thermal conductivity of the InGaAs modulation layers.