High-speed multiple-quantum-well optical power amplifier

A multiple-quantum-well optical amplifier is used at 8 Gb/s with high input power such that the average gain is compressed by 2.6 dB. Under these conditions, the output signal level is 35 mW and there is negligible intersymbol interference (ISI) penalty at the receiver. This is possible because of a rapid (7 ps) gain recovery process in the amplifier. A conventional semiconductor amplifier operating at a similar level of gain compression shows 2 dB ISI penalty     

Cross-phase modulation in a semiconductor laser amplifierdetermined by a dispersive technique

Cross-phase modulation in a semiconductor laser diode amplifier is reported. A simple expression for the chirp imparted on a weak signal pulse by the action of a strong pump pulse is derived. A novel dispersive technique for characterizing the resulting nonlinear chirp is introduced and used in the present experiment. A maximum frequency excursion of 16 GHz, due to the cross-phase modulation, was measured. A value of 6 was found for α_xpm, which is a factor for characterizing the cross-phase modulation in a similar manner to the conventional linewidth enhancement factor α     

Intermodulation distortion in a multiple-quantum-well semiconductor optical amplifier

The measurement of intermodulation distortion (IMD) induced by carrier-density modulation in a multiple-quantum-well (MQW) semiconductor amplifier is reported. The results show that MQW amplifiers have 15 dB less IMD than conventional buried-heterostructure semiconductor amplifiers. The IMD is dependent on the output power of the amplifiers, which confirms that the carrier-density modulation is the dominant nonlinear mechanism in MQW amplifiers. In addition, the results show that, unlike conventional buried-heterostructure amplifiers, MQW amplifiers have at least two time constants (200-250 ps and <10 ps) for the gain recovery process.<>     

Optical demultiplexing at 6 Gb/s using a semiconductor laser amplifier as an optical gate

A semiconductor laser amplifier (SLA) has been employed successfully for optical demultiplexing in two-channel optical time division multiplexed system experiments at 6 and 2 Gb/s. Demultiplexing of 6-Gb/s (2-Gb/s) signals was demonstrated with a power penalty of 1.6 dB (3.0 dB) at bit error rates of 10/sup -9/. It is also shown that a reduction of the generated amplified spontaneous emission can be obtained by optical gating/demultiplexing for systems incorporating inline amplifiers. A 0.5-dB improvement in sensitivity was achieved as a result of using an SLA for demultiplexing from 2.0 to 1.0 Gb/s in a system with one inline Er/sup 3+/-doped fiber amplifier.<>