Ab<Emphasis Type="Italic"> initio</Emphasis> investigation of boron diffusion paths in germanium

Boron is observed to diffuse very slowly in germanium, as opposed to its behaviour in silicon where it exhibits Transient Enhanced Diffusion effects in implanted samples. As a result of this slow diffusion, boron is a very stable dopant, allowing devices to be created with very well-defined doping regions. To understand this superior performance, calculations were performed on a variety of boron diffusion paths, within vacancy and interstitial mediated methods. It was found that the vacancy mediated diffusion which is associated with the fast diffusion of many other species in germanium exhibits a total barrier of 5.8 eV. Interstitial-mediated diffusion had a total barrier for migration of 3.4 eV in the neutral and singly negative charge states, 3.2 eV for the positive charge state, but a formation barrier of 4.1 eV. Thus the barrier for interstitial-mediated diffusion is dominated by the formation energy of the self-interstitial.     

Kinetics of Zn and Pb evaporation from liquid iron

The evaporation kinetics of Zn and Pb from liquid iron at 1600°C were studied under argon pressure 0.1 to 50 bar in an induction furnace. It was found that the limiting step of evaporation under p_Ar < 1 bar is diffusion in the melt. Diffusion in the gas phase becomes rate-determining with increasing argon pressure. The phase boundary reaction has no effect on the evaporation of Zn and Pb. The evaporation of Zn can evidently be reduced by increasing argon pressure above 1 bar, while the evaporation of Pb is not significantly effected by changes of argon pressure.     

High-Temperature Electrical Properties in the ThO2-Rich Region of ThO2-RE2O3 Systems

In the present study the n -type electronic conduction in terms of the parameter p e, and the phase relations in several ThO₂-RE2O₃ systems were examined. Large fluorite solid solution regions exist at elevated temperatures. It was demonstrated that RE₂O₃-doped thoria compositions feature lower parameters p e, and higher chemical stability than the conventional stabilized ZrO2 electrolytes. The results are given in terms of the characteristic parameter p e, in the temperature range from 1000° to 1600°C. The experimental investigations were made using a new thermodynamic measuring system.     

Accidents, mileage, and the exaggeration of risk

The usual interpretation of accidents per mile as a measure of risk exaggerates the apparent risk of low-mileage groups--for example, teenagers and the elderly. The assumption of a linear proportional relationship between mileage and accidents is shown not to fit obtained data. Neither would it be expected to fit hypothetical data derived from a "standard driver" or a group of equally competent drivers driving different numbers of miles. People driving low mileages tend to accumulate much of their mileage on congested city streets with two-way traffic and no restriction of access, while high-mileage drivers typically accumulate most of those miles on freeways or other divided multilane highways with limited access. Because the driving task is simpler, the accident rate per mile is much lower on freeways, and beyond a certain point, a person driving half as many miles as another would be expected to have considerably more than half as many accidents. This and other considerations lead to the suggestion that an induced exposure approach would be a more valid method of correcting accident rates for mileage.     

Coherent Phonon-Induced Modulation of Charge Transfer in 2D Hybrid Perovskites

Electron–phonon interactions play an essential role in charge transport and transfer processes in semiconductors. For most structures, tailoring electron–phonon interactions for specific functionality remains elusive. Here, it is shown that, in hybrid perovskites, coherent phonon modes can be used to manipulate charge transfer. In the 2D double perovskite, (AE2T)₂AgBiI₈ (AE2T: 5,5“-diylbis(amino-ethyl)-(2,2”-(2)thiophene)), the valence band maximum derived from the [Ag_0.5Bi_0.5I₄]^2– framework lies in close proximity to the AE2T-derived HOMO level, thereby forming a type-II heterostructure. During transient absorption spectroscopy, pulsed excitation creates sustained coherent phonon modes, which periodically modulate the associated electronic levels. Thus, the energy offset at the organic–inorganic interface also oscillates periodically, providing a unique opportunity for modulation of interfacial charge transfer. Density-functional theory corroborates the mechanism and identifies specific phonon modes as likely drivers of the coherent charge transfer. These observations are a striking example of how electron–phonon interactions can be used to manipulate fundamentally important charge and energy transfer processes in hybrid perovskites.     

Thermochemische Kennwerte für die Reaktion,Mo + O2 ⇌ MoO2 sowie in Eisenschmelzen

Zusammenstellung von Schrifttumsangaben für die Änderung der freien Standardenthalpien der Reaktionen , Mo + O₂ ? MoO₂ und in Eisenschmelzen. Neubestimmung der Temperaturabhängigkeiten der Größen ΔG^oCr₂O₃, ΔG^oMoO₂ und ΔG^o_O im Eisen bei Temperaturen zwischen 1460 bzw. 1530 und 1725 °C. Nachweis der Anwendbarkeit der neu ermittelten thermodynamischen Funktionen durch EMK-Parallelmessungen an ThO₂ (Y₂O₃)- und ZrO₂ (MgO)-Festelektrolytzellen mit Cr-Cr₂O₃- und Mo-MoO₂-Referenzelektroden in Reineisenschmelzen bei 1600 °C. Ermittlung des Parameters p_e′ der Elektronenteilleitfähigkeit für einen teilstabilisierten ZrO₂-Festelektrolyten mit einem Stoffmengengehalt von 5% MgO.     

Recursive identification of continuous-time Wiener systems

Recursive algorithms to identify both subsystems of a continuous-time Wiener system are presented. The system is driven and disturbed by Gaussian white random signals. The impulse response of the linear dynamic subsystem is recovered with a correlation method. It is shown that the inverse of the non-linear characteristic of the other subsystem is a regression function. Then, to recover the inverse, two estimates are presented. The algorithms converge to the unknown impulse response, and the inverse of the characteristic, respectively. Convergence rates are presented. Moreover, results of simulation examples are given.     

Comparison of analysis methods for package-induced stresses on moulded Hall sensors

Due to the piezoresistive and the piezo-Hall effect in semiconductor materials, Hall sensors show a strong temperature dependency and also a drift when subjected to temperature cycles Manic et al. (2000). Four factors mainly influence the mechanical stress in the sensitive layer. These are the geometry of the device, the differences of the coefficients of thermal expansion of the package materials, the temperature-dependent material properties and the time-dependent, viscous material properties. The objective of this investigation was to determine the mechanical stress in a moulded Hall sensor during the packaging process by finite-element simulation in comparison to experimental methods. It is shown that after each process-step the mechanical stress in the sensitive layer changes over time depending on the absolute value and the rate of the temperature change. Measurements of the inverse bending radius of glued and moulded chips show good agreement to the simulations.