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Microstrip stepped impedance resonator bandpass filter with an extended optimal rejection bandwidth 总被引:2,自引:0,他引:2
Bandpass filters with an optimal rejection bandwidth are designed using parallel-coupled stepped impedance resonators (SIRs). The fundamental (f/sub o/) and higher order resonant harmonics of an SIR are analyzed against the length ratio of the high-Z and low-Z segments. It is found that an optimal length ratio can be obtained for each high-Z to low-Z impedance ratio to maximize the upper rejection bandwidth. A tapped-line input/output structure is exploited to create two extra transmission zeros in the stopband. The singly loaded Q(Q/sub si/) of a tapped SIR is derived. With the aid of Q/sub si/, the two zeros can be independently tuned over a wide frequency range. When the positions of the two zeros are purposely located at the two leading higher order harmonics, the upper rejection band can be greatly extended. Chebyshev bandpass filters with spurious resonances up to 4.4f/sub o/, 6.5f/sub o/, and 8.2f/sub o/ are fabricated and measured to demonstrate the idea. 相似文献
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Three distinct stages of kink band formation and propagation exist in ductile matrix composites subjected to compressive loading. These stages are called incipient kinking, transient kinking and kink band broadening. Each stage involves a different deformation mode. The mechanics governing each stage are discussed. Incipient kinking, where the peak load is attained, and kink band broadening, where the load attains a steady-state, are important in structural design. Two design philosophies are presented. References to pertinent literature are made throughout. 相似文献
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Ming-Jer Jeng Jenn-Gwo Hwu 《Electron Device Letters, IEEE》1996,17(12):575-577
Anodic oxidation at room temperature with pure deionized water as electrolyte and then followed by high-temperature rapid thermal densification was used to prepare high breakdown endurance thin-gate oxides with thicknesses of about 50 Å. It was observed that the oxides prepared by anodic oxidation followed by rapid thermal densification (AOD) show better electrical characteristics than those grown by rapid thermal oxidation (RTO) only. The AOD oxides have a very low midgap interface trap density, Ditm, of smaller than 1×1010 eV-1 cm-2 and negative effective oxide trapped charge. From the smaller leakage currents observed during staircase ramp voltage time-zero dielectric breakdown (TZDB) and constant field time-dependent dielectric breakdown (TDDB) testings, it is supposed that the uniform interfacial property and the pretrapped negative charges in AOD oxides are responsible for the improved characteristics 相似文献
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Streit D.C. Hafizi M.E. Umemoto D.K. Velebir J.R. Tran L.T. Oki A.K. Kim M.E. Wang S.K. Kim C.W. Sadwick L.P. Hwu R.J. 《Electron Device Letters, IEEE》1991,12(5):194-196
The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×1019 cm-3 at the emitter edge to 5×1018 cm-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×1019 cm-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40% 相似文献
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Chao-Chi Hong Jenn-Gwo Hwu 《Electron Device Letters, IEEE》2003,24(6):408-410
The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports. 相似文献
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The interfacial stress intensity factors for three types of sandwich specimens: the single edge crack tensile specimen, the three point bend specimen and the four point shear specimen were obtained by the finite element analysis and compared with the asymptotic solutions. The results show that the geometric effect for mode II specimen is larger than mode I specimen. The limit curves for geometry factor equal to 1.05 were obtained to indicate the usable range of validity of the asymptotic solution. 相似文献
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2-D dopant profiling in VLSI devices using dopant-selectiveetching: an atomic force microscopy study
We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method 相似文献
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