PID Control of Planar Nonlinear Uncertain Systems in the Presence of Actuator Saturation

This paper investigates PID control design for a class of planar nonlinear uncertain systems in the presence of actuator saturation. Based on the bounds on the growth rates of the nonlinear uncertain function in the system model, the system is placed in a linear differential inclusion. Each vertex system of the linear differential inclusion is a linear system subject to actuator saturation. By placing the saturated PID control into a convex hull formed by the PID controller and an auxiliary linear feedback law, we establish conditions under which an ellipsoid is contractively invariant and hence is an estimate of the domain of attraction of the equilibrium point of the closed-loop system. The equilibrium point corresponds to the desired set point for the system output. Thus, the location of the equilibrium point and the size of the domain of attraction determine, respectively, the set point that the output can achieve and the range of initial conditions from which this set point can be reached. Based on these conditions, the feasible set points can be determined and the design of the PID control law that stabilizes the nonlinear uncertain system at a feasible set point with a large domain of attraction can then be formulated and solved as a constrained optimization problem with constraints in the form of linear matrix inequalities (LMIs). Application of the proposed design to a magnetic suspension system illustrates the design process and the performance of the resulting PID control law.      

Enhanced strains of Nb-doped BNKT-4ST piezoelectric ceramics via phase boundary and domain design

A strategy that constructs the morphotropic phase boundary and manipulates the domain structure has been used to design the component of 0.96[Bi_0.5(Na_0.84K_0.16)_0.5Ti_(1-x)Nb_xO₃]-0.04SrTiO₃ (BNKT-4ST-100xNb) to enhance the strain properties for actuator application. Non-equivalent Nb⁵⁺ donor doping modulates the phase transition from the mixture of rhombohedral and tetragonal phases to the pseudocubic phase and results in the coexistence of multiple phases. Moreover, the high-resolution TEM confirms the existence of polar nano regions that contribute to the macroscopic relaxor behaviour. The size of the domains is reduced with increasing Nb⁵⁺, resulting in an enhanced relaxor behaviour. The ferroelectric-relaxor transition temperature decreases from 85 to below 30 °C, implying a non-ergodic to ergodic relaxor transition. An improved strain of 0.56% and a giant normalized strain of 1120 pm/V were achieved for BNKT-4ST-1.5Nb, which were attributed to the unique domain structure in which nanodomains are embedded in an undistorted cubic matrix. Ferroelectric, antiferroelectric, and relaxor phases coexist. As the electric field is large enough, a reversible phase transition occurs. Furthermore, good temperature stability was obtained due to the stability of the nanodomains, and no degradation in strains was observed even after 10⁴ cycles, which may originate from the reversible phase transition and dynamic domain wall. The results show that this design strategy offers a reference way to improve the strain behaviour and that BNKT-4ST-100xNb ceramics could be a potential material for high-displacement actuator applications.     

Real-time molecular characterization of air pollutants in a Hong Kong residence: Implication of indoor source emissions and heterogeneous chemistry

Due to the high health risks associated with indoor air pollutants and long-term exposure, indoor air quality has received increasing attention. In this study, we put emphasis on the molecular composition, source emissions, and chemical aging of air pollutants in a residence with designed activities mimicking ordinary Hong Kong homes. More than 150 air pollutants were detected at molecular level, 87 of which were quantified at a time resolution of not less than 1 hour. The indoor-to-outdoor ratios were higher than 1 for most of the primary air pollutants, due to emissions of indoor activities and indoor backgrounds (especially for aldehydes). In contrast, many secondary air pollutants exhibited higher concentrations in outdoor air. Painting ranked first in aldehyde emissions, which also caused great enhancement of aromatics. Incense burning had the highest emissions of particle-phase organics, with vanillic acid and syringic acid as markers. The other noteworthy fingerprints enabled by online measurements included linoleic acid, cholesterol, and oleic acid for cooking, 2,5-dimethylfuran, stigmasterol, iso-/anteiso-alkanes, and fructose isomers for smoking, C₂₈-C₃₄ even n-alkanes for candle burning, and monoterpenes for the use of air freshener, cleaning agents, and camphor oil. We showed clear evidence of chemical aging of cooking emissions, giving a hint of indoor heterogeneous chemistry. This study highlights the value of organic molecules measured at high time resolutions in enhancing our knowledge on indoor air quality.     

荧光显示管直丝氧化物阴极有效逸出功的计算

阴极的逸出功是表征阴极发射能力的物理量，求定荧光显示管直丝氧化物阴极有效逸出功时，因其零场发射电流密度难于准确取值，温度无法直接测量，显得困难，须予解决，为此提出了一种计算阴极有产逸出功的办法，对某显示管的发射欠佳和“低温高效”的两种氧化物阴极的有效逸出功进行计算，有效逸出功率是靠测量相关物理量再同计算得出，精度不很高，文中所用办法也不例外，但所得结果能反映阴极发射能力，所需仪器少，是实用方法。     

包气带中不同示踪源层条件下核素迁移对比试验

为研究不同示踪源层材料对水份运移和核素迁移的影响，开展了以石英砂和黄土分别为示踪源层载体时Sr、Nd、Ce在包气带中迁移的对比试验。试验历时470d，在两种源层条件下各取土芯样4次。试验结果表明：在喷淋强度为5mm/h、3h/d条件下，Nd和Ce无论在石英砂示踪源层还是黄土示踪源层中浓度峰位均没有明显向下迁移；对于Sr，在黄土示踪源层中，470d后其峰位向下迁移约15cm(按质心计算为10cm左右)，而从石英砂示踪源层中向下迁移不明显（按质心计算，迁移约2.7cm），只是峰位有些展宽。上述结果表明，极薄（7mm）的细石英砂层也能对非饱和入渗水产生明显屏流作用，使得核素从石英砂示踪源层中向下迁移速度减慢。     

振动筛合金篦条磨损机理及抗磨损技术

分析了山西焦化股份有限公司振动筛合金篦条磨损情况，对合金篦条磨损机理进行了研究，提出控制磨蚀和提高材料耐磨洼的方法。     

A Novel Body-tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode

A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current (I_DS-V_DS) curves, substrate resistance effect on the I_DS-V_DS curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits.     

利用最小熵法预测高频拓宽频带

本根据最小熵观点给出了预测高频成分拓宽频带的方法，实际效果表明，该方法是一种拓宽频带的有效方法。