Development of 170 GHz/500 kW gyrotron

A development of 170GHz/500kW level gyrotron was carried out as R&D work of ITER. The oscillation mode is TE_31,8. In a short pulse experiment, the maximum power of 750kW was achieved at 85kV/40A. The efficiency was 22%. In the depressed collector operation, 500kW/36%/50ms was obtained. The maximum efficiency of 40% was obtained at P_RF=470kW whereas the power decrease by the electron trapping was observed. Pulse extension was done up to 10s at P_RF=170kW with the depressed collector operation. The power was limited by the temperature increase of the output window.     

RTCB Complex Regulates Stress-Induced tRNA Cleavage

Under stress conditions, transfer RNAs (tRNAs) are cleaved by stress-responsive RNases such as angiogenin, generating tRNA-derived RNAs called tiRNAs. As tiRNAs contribute to cytoprotection through inhibition of translation and prevention of apoptosis, the regulation of tiRNA production is critical for cellular stress response. Here, we show that RTCB ligase complex (RTCB-LC), an RNA ligase complex involved in endoplasmic reticulum (ER) stress response and precursor tRNA splicing, negatively regulates stress-induced tiRNA production. Knockdown of RTCB significantly increased stress-induced tiRNA production, suggesting that RTCB-LC negatively regulates tiRNA production. Gel-purified tiRNAs were repaired to full-length tRNAs by RtcB in vitro, suggesting that RTCB-LC can generate full length tRNAs from tiRNAs. As RTCB-LC is inhibited under oxidative stress, we further investigated whether tiRNA production is promoted through the inhibition of RTCB-LC under oxidative stress. Although hydrogen peroxide (H₂O₂) itself did not induce tiRNA production, it rapidly boosted tiRNA production under the condition where stress-responsive RNases are activated. We propose a model of stress-induced tiRNA production consisting of two factors, a trigger and booster. This RTCB-LC-mediated boosting mechanism may contribute to the effective stress response in the cell.     

High Efficiency Mode Converter for Low-Frequency Gyrotron

A high efficiency quasi-optical (QO) mode converter for high-power, low-frequency gyrotron have been designed and tested. For low-frequency gyrotrons, the scales of the mode converter are comparatively small on the wavelength scale, thus causing significant diffraction losses. Over-1 MW power gyrotron with TE_8,3 cavity at 28 GHz have been developed, which has a high efficiency mode converter designed by the use of numerical methods for launcher optimization. This calculation is sufficiently optimized to maximize the fractional Gaussian content of the far field. The total transmission efficiency from the mode converter to output window is 94.7%. For the experimental result of first tube, the output power of more than 1 MW has been obtained with about 40% efficiency and output burn pattern agrees fairly with the calculated profiles, which imply the design appropriateness. Besides, the frequency dependence for diffraction loss is discussed, and these results give the guiding design principle of the mode converter for high-power, low-frequency and long-pulse gyrotrons.     

ESD robustness improvement for integrated DMOS transistors —the different gate‐voltage dependence of It2 between VDMOS and LDMOS transistors

This paper presents the device‐level electrostatic discharge (ESD) robustness improvement for integrated vertical double‐diffused MOS (VDMOS) and lateral double‐diffused MOS (LDMOS) transistors by changing device structure. The ESD robustness of VDMOS transistor was improved by preventing current concentration and that of LDMOS transistor was improved by relaxing the electric field under the LOCOS oxide. We found the different gate‐voltage dependence of the second breakdown current (I_t2) between VDMOS and LDMOS transistors. © 2011 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Analysis of Snapback Phenomena in VDMOS Transistor having the High Second Breakdown Current: A High ESD Mechanism Analysis

We proposed the balanced vertical double - diffused MOS (B-VDMOS) transistor. The B-VDMOS transistor is not destroyed by avalanche breakdown and acquires the high second breakdown current. Owing to the high second breakdown current, the B-VDMOS transistor has high electrostatic discharge (ESD) robustness. This paper presents the mechanism of the snapback phenomena and clarifies the cause that the B-VDMOS transistor has the high second breakdown current. We find the cause that current does not become concentrated even after avalanche breakdown in the B-VDMOS transistor. Copyright © 2009 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Selection of features for signature verification using the genetic algorithm

This paper presents a new method to select features of handwritten signatures using the genetic algorithm. In the proposed method, the features are determined by chromosomes. The genotypes are modified by the genetic algorithm with a local improvement mechanism. A new crossover method is also proposed to determine the number of features used for signature verification. Furthermore, the moving traces of the pen in the air above the tablet are also included in the candidate strokes. Experiments are done to show the effectiveness of the new method.     

Nuclear spin-lattice relaxation in a Kondo superconductor

The nuclear spin-lattice relaxation rate R _s in a Kondo superconductor has been calculated numerically in the framework of the Müller-Hartmann-Zittartz depairing theory. The calculations have been performed in the case of the usual Korringa mechanism for certain concentrations of magnetic impurities and some typical values of T _K/T _c0, where T _K is the Kondo temperature and T _c0 is the superconducting transition temperature in the absence of magnetic impurities. The temperature variation of R _s shows very interesting behavior for values of T _K/T _c0corresponding to the reentrance behavior of superconductivity. Results are compared with the experimental data on the La(Ce)Al₂ system obtained by MacLaughlin, Alloul, and Daugherty. Other possible relaxation mechanisms in the La(Gd, Ce)Al₂ systems are also discussed.     

Development of 28?GHz and 77?GHz, Mega-Watt Gyrotrons for Fusion Devices

A 28 GHz 1 MW with TE_8,3 cavity for GAMMA10 tandem mirror and a 77 GHz 1.5 MW gyrotron with TE_18,6 for Large Helical Device (LHD) have been developed to upgrade their Electron Cyclotron Heating (ECH) systems. In the 28 GHz gyrotron, the maximum power of 1.05 MW was obtained, which is in agreement with its design target value. And the high efficiency of 40% without collector potential depression (CPD) was obtained with 0.8 MW. In the first and second 77 GHz gyrotrons, 0.8 MW 3.6 sec., 0.3 MW 60 sec operations have been achieved, but several issues due to the stray RF and velocity dispersion have been found, too. In consideration of these, the design improvement was performed to aim at 1.5 MW in the third tube. In the short pulse test, the maximum output power of 1.6 MW and the maximum total efficiency of 49.4% with CPD were obtained. In the long pulse test, the pulse length extended to 5 sec with 1 MW, 1800 sec with 0.1 MW, 1.6 sec with 1.5 MW. Total injection power of 3.1 MW to LHD plasma has been achieved. It is shown that the electron beam pitch factor ?? decreases with increasing of beam current, comparing with the experimental and calculation results.     

Fabrication of a Flexible Bismuth Telluride Power Generation Module Using Microporous Polyimide Films as Substrates

In this study, we investigated the effect of the structure of microporous p-type (Bi_0.4Te₃Sb_1.6) and n-type (Bi_2.0Te_2.7Se_0.3) BiTe-based thin films on their thermoelectric performance. High-aspect-ratio porous thin films with pore depth greater than 1 μm and pore diameter ranging from 300 nm to 500 nm were prepared by oxygen plasma etching of polyimide (PI) layers capped with a heat-resistant block copolymer, which acted as the template. The cross-plane thermal conductivities of the porous p- and n-type thin films were 0.4 W m^?1 K^?1 and 0.42 W m^?1 K^?1, respectively, and the dimensionless figures of merit, ZT, of the p- and n-type BiTe films were estimated as 1.0 and 1.0, respectively, at room temperature. A prototype thermoelectric module consisting of 20 pairs of p- and n-type strips over an area of 3 cm × 5 cm was fabricated on the porous PI substrate. This module produced an output power of 0.1 mW and an output voltage of 0.6 V for a temperature difference of 130°C. The output power of the submicrostructured module was 1.5 times greater than that of a module based on smooth BiTe-based thin films. Thus, the thermoelectric performance of the thin films was improved owing to their submicroscale structure.