Effects of genotype and treatment on the antioxidant activity of sweet potato in Taiwan

Six genotypes of sweet potato commercially available in Taiwan, including TNG57, TNG66, TNG68, TYY1, RP and WP, were used as samples in this study of the effects of steaming and kneading with pre-steaming treatments on the antioxidant components and antioxidant properties of methanolic extracts. Steam treatment increased the total phenols contents of all genotypes (2–13 times), flavonoids content of RP (1.3 times) and anthocyanins contents of RP and WP (5–6 times). Steam treatment also increased the reducing power and scavenging DPPH radical effect of sweet potato flours. For the methanolic extracts of steamed and kneaded flours, reducing powers were 0.02–1.70 at 5.0 mg ml⁻¹ and the scavenging effects on DPPH radicals were 19–92% at 2.5 mg ml⁻¹. Both showed the order of RP > WP > TYY1 and TNG66 > TNG57 and TNG68. However, the chelating effect of the six genotypes at 1.0 mg ml⁻¹ ranged from 50% to 73%. Contents of total phenols, flavonoids, and anthocyanins of sweet potato flours were significantly positively correlated with the reducing power and scavenging DPPH radical effects. After steaming and kneading treatments, RP showed the highest increase in the contents of total phenols, flavonoids and anthocyanins among the six genotypes studied.     

A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

L－B膜修饰电极循环伏安行为模拟──（Ⅰ）电荷转移速度常数对循环伏安性能的影响

本文用计算机数字模拟方法研究了电活性分子多层Ｚ型Ｌ－Ｂ膜修饰电极的循环伏安行为。计算了电极与修饰Ｌ－Ｂ膜分子第一层之间的电荷转移速度常数Ｋ_ｏ，Ｌ－Ｂ膜分子层间的电荷转移速度常数ｋ_ｉ；对峰电位差△Ｅ_ｐ及阳极峰面积Ｑ的影响，以及在不同条件下各层分子的氧化态分数随扫描时间的变化。为研究和设计电活性分子修饰电极的实际体系提供了大量数据和信息。     

新型实用布线算法──L─M算法

本文提出新型布线算法，集李氏迷宫法与线搜索法的长处为一体，以饱和带法进行动态排序，以线搜索法确定借孔位置，然后用李氏法进行单层布线，获得最佳路径，从而达到线型好，布通率高的效果。     

Intravaginal Controlled Administration of Flurogestone Acetate: (III) Development of Rate-Control Vaginal Devices

A Rate-Control vaginal device was developed which overcomes the low bioavailability and unpredictable Q - t^1/2 type release and absorption rate profiles of flurogestone acetate delivered by the currently marketed Syncro-Mate pessary.

The in vitro release and vaginal absorption profiles from the Rate-Control vaginal device were run simultaneously, a linear Q - t relationship was obtained with a significant improvement in bioavailability. A mathematical model was developed to correlate the in vitro drug release and the vaginal absorption profiles of flurogestone acetate from the vaginal devices.

The design, development and the simultaneous release and absorption profiles of flurogestone acetate from this new vaginal device were outlined and discussed.     

Optical imaging of anatomical maps derived from magnetic resonanceimages using time-independent optical sources

Presents a model suitable for computing images of absorption cross sections of thick tissue structures illuminated at near infrared (NIR) wavelengths from tomographic projection data. Image reconstruction is accomplished by solving a system of linear equations derived from transport theory. Reconstruction results using different algebraic solvers are shown for anatomical maps of the breast, derived from magnetic resonance imaging data, containing two simulated pathologies, in which case qualitatively good reconstructions were obtained. Evaluation of magnetic resonance (MR) data to optimize NIR optical tomographic imaging methods and to assess the feasibility of a combined MR-optical measurement scheme is discussed     

β″－Al_2O_3陶瓷的强化和韧化

研究了稳定ＺｒＯ＿２和部份稳定ＺｒＯ＿２对β″－Ａｌ＿２Ｏ＿３陶瓷的强化和韧化作用，观察了不同种类、不同含量的ＺｒＯ＿２对β″－Ａｌ＿２Ｏ＿３陶瓷的显微结构、力学性能和电导率的影响，探讨了β″－Ａｌ＿２Ｏ＿３的韧化机理。     

Determination of the width of the transition layer between the crystalline and amorphous zones in nylon 1010 by SAXS

The width of the transition layer between the crystalline and amorphous zones in nylon 1010 was determined by SAXS with point collimation and long-slit collimation, respectively. The width of the transition layer, E, was found to be 1.7 nm. The results show that the width of the transition layer is independent of crystallinity.     

Lamp configuration design for rapid thermal processing systems

We have studied lamp configuration design for rapid thermal processing (RTP) systems. We considered a configuration consisting of four concentric circular lamp zones, three of them above the wafer and one circumventing the wafer. We propose a method to determine the geometric parameters, the width, height and radius, of the lamp zones so that the configuration designed has the capacity to achieve a uniform temperature on the wafer. The method is based on a necessary and sufficient condition for uniform temperature tracking and analytic expressions of the view factors. A design example is given in which a least square open-loop control law yields good temperature uniformity     

Novel technique for SiO2 formed by liquid-phasedeposition for low-temperature processed polysilicon TFT

A technique for SiO₂ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO₂ film with a lower P-etch rate shows a dense structure. LPD SiO₂ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO ₂ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)