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The frequency concepts of GSM and DECT systems in mobile handsets consist mainly of three voltage controlled oscillators. The goal of this work is the integration of these oscillators with a bipolar technology. In this paper the requirements for the oscillators are shown. The possibilities of integration are examined theoretically and by experiment. For the GSM system a partly integrated solution is demonstrated and for the DECT system a fully integrated VCO is presented.  相似文献   
2.
A fully integrated voltage-controlled oscillator at a frequency of 2 GHz with low phase noise has been implemented in a standard bipolar process with a ft of 25 GHz. The design is based on an LC-resonator with vertical-coupled inductors. Only two metal layers have been used. The supply voltage of the oscillator is 2.7 V. The phase noise is only -136 dB/Hz at 4.7 MHz frequency offset. A tuning range of 150 MHz is achieved with integrated tuning diodes  相似文献   
3.
A fully integrated radio transceiver chip for the 2.4- and 5-GHz WLAN standards 802.11a/b/g is presented in a 0.25-/spl mu/m 40-GHz BiCMOS technology. The chip integrates the low-noise amplifiers, mixers, channel filters, programmable gain control, synthesizers with voltage-controlled oscillators and reference oscillator, transmitters, antialiasing filters, and voltage regulators. The key performances of the presented transceiver are a receive sensitivity of -85 dBm and -74 dBm for 11-Mb/s complementary code keying (CCK) and 54 Mb/s orthogonal frequency division multiplexing (OFDM) modes, respectively, and an error vector magnitude of -35 dB measured at the transmitter with an output power of -4 dBm at 54-Mb/s 802.11a mode. The transceiver exceeds all IEEE requirements for the 802.11a/b/g CCK and OFDM standards and supports a frequency range of 4.9 to 6 GHz for the future extensions of the 802.11a standard in different countries.  相似文献   
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