Reduction of the current gain of the n-p-n transistor component ofa thyristor due to the doping concentration of the p-base

The reduction of the current amplification factor of a wide-base transistor, with growing doping concentration in the base region, is investigated. A method for the determination of the minority-carrier lifetime τ_n in the base region and the emitter Gummel number G_e is developed. The method is based on transistor structures differing only in the base width. It was found that the lifetime τ_n decreases according to the power law τ_n~N^-0.45_A. This result is analyzed for different recombination processes. Good agreement is obtained if shallow impurities acting as recombination centers are assumed. The injection-limited current gain β_γ decreases significantly with an increase in the total number of the doping concentration of the base, reaches a broad maximum, and then falls slowly. The maximum value of G_e is found to be 1.1×10¹⁴ cm^-4-s in good agreement with theoretical results. Finally, the contribution of the injection efficiency γ and the transport factor α_T to the current gain α are determined. It is found that α is limited mainly by the injection efficiency γ     

Capacitance and conductance of ZnxCd1-xS/ZnTeheterojunctions

Capacitance-voltage and conductance-voltage characteristics of RF-sputtered ZnCdS films on ZnTe single crystals are studied as a function of frequency up to 1 MHz. It is found that the measured capacitance decreases with frequency while the conductance increases. A physical circuit model of the junction is proposed to explain this dependence. A relationship relating the junction capacitance to the polycrystalline film properties and the built-in voltage of the junction is derived. It shows that the junction capacitance is related to the average carrier concentration rather than the doping concentration of the polycrystalline material. From a C^-2 versus V plot an average carrier concentration in the films which is in good agreement with that obtained by Hall measurement is obtained. The lower average electron concentration in the ZnCdS film near the substrate is due to either interdiffusion of Cd from the film into substrate or due to higher density of grain boundary states in the starting deposition portion of the film     

Approved algorithmic security enhancement of stream cipher for advanced mobile communications

ABSTRACT

Confidentiality and integrity processes are based on SNOW and ZUC algorithms. These standardized algorithms are designed by the 3rd Generation Partnership Project (3GPP) for advanced mobile communication systems. Each algorithm has two S-boxes in its nonlinear layer structure. This paper proposes three different approaches to enhance the security level of both algorithms. The first approach aims to select the best combination of two S-boxes in the nonlinear part of each algorithm. Results showed that the best randomness properties are achieved by combining the Feistel structure (S1-box) and Rijndael (S2-box) in the SNOW algorithm and New Rijndael (S1-box) and Rijndael (S2-box) in the ZUC algorithm. The second approach aims to increase the nonlinearity and complexity of these algorithms by selecting a strong S-box to cascade the best-existing two S-boxes for both algorithms. The third approach is an extension of the former, based on a dynamic reform of such S-boxes as a function of the “Authentication Token” to increase the computational complexity of the upgraded two algorithms. These proposed upgrades are simulated by C language and tested successfully for their statistical properties using the standard NIST SP 800-22 test suite.     

A Self-powered Wearable Wireless Sensor System Powered by a Hybrid Energy Harvester for Healthcare Applications

Wireless Personal Communications - In this paper, a wearable medical sensor system is designed for long-term healthcare applications. This system is used for monitoring temperature, heartbeat,...     

A fast CAD model of plasma spread in thyristors using aseminumerical time-domain approach

This paper presents a fast CAD model to calculate plasma-spreading velocity in large area thyristors. The model is based on the two-dimensional two-transistor circuit model of a thyristor. At first, a simplified numerical solution of the semiconductor equations is developed to obtain the current amplification factor and the base transit time of each transistor of the thyristor model as a function of the emitter current density. The turn-on recurrence relations governing the evolution of the anode current at different lateral points are then derived by the transit function method. The time constant of the anode current rise and the plasma spreading velocity are calculated as functions of the anode current density. The results of simulation are in close agreement with the corresponding measured values of plasma spreading velocity by the electrical probes method. This agreement confirms the validity of our model over a large scale of anode current densities     

An FPGA design and implementation of EPZS motion estimation algorithm for 3D H.264/MVC standard

Multimedia Tools and Applications - In the Three-Dimensional H.264 Multi-view Video Coding (3D H.264/MVC), the original 3D Video (3DV) sequence is a combination of variable video frames captured...     

The microthyristor could be a promising microelectronics device

In this paper, a new microthyristor structure suitable for microelectronics applications has been introduced. A suitable technology for its implementation has been chosen. The microthyristor has been designed and its performance has been simulated. The device showed superior performance concerning the switching times and the power dissipation in addition to controllability of its S-curve. During the development of this work, we introduced some new concepts such as doping-engineered devices, thyristor turn-off by shunting its cathode junction, and power consumption reduction by realizing high resistances. The basic requirements and some conditions are put together for successful launch of the microthyristor in microelectronics.