排序方式: 共有32条查询结果,搜索用时 15 毫秒
1.
Lott J.A. Schneider R.P. Jr Vawter G.A. Zolper J.C. Malloy K.J. 《Electronics letters》1993,29(4):328-329
The demonstration of the first visible resonant cavity light-emitting diodes (RCLEDs) is reported. The devices consist of an InAlGaP strained quantum well active region surrounded by AlAs/AlGaAs distributed Bragg reflectors. Linewidths from 0.9 mm (2.6 meV) to 45 nm (12.8 meV) were obtained by varying the cavity factor (Q).<> 相似文献
2.
Zolper J.C. Shenvin M.E. Baca A.G. Shul R.J. Klem J.F. Hietala V.M. 《Electron Device Letters, IEEE》1994,15(12):493-495
C ion implantation has been employed, for the first time, to form the buried p-layer in GaAs, self-aligned, ion implanted JFETs. Comparable DC performance was seen for JFETs with C or Mg implants; however, C-backside JFETs showed superior high-frequency performance. High dose C-backside devices had a ft of 28.3 GHz and a fmax of 43.2 GHz for a 0.5 μm gate length that were 28% and 46% higher, respectively, than comparable Mg-implanted JFETs. This enhancement is a result of the lower Cgs in the C-backside device resulting from he inherently low activation of the implanted C below the channel while the C still effectively compensated the tail of the Si-channel implant. This approach relaxes the trade-off between optimizing the DC and the AC performance for the buried p-implant in GaAs JFETs and MESFET's 相似文献
3.
J. C. Zolper J. Han R. M. Biefeld S. B. van Deusen W. R. Wampler D. J. Reiger S. J. Pearton J. S. Williams H. H. Tan R. F. Karlicek Jr. R. A. Stall 《Journal of Electronic Materials》1998,27(4):179-184
Implant activation annealing of Si-implanted GaN is reported for temperatures from 1100 to 1400°C. Free electron concentrations
up to 3.5×1020 cm−3 are estimated at the peak of the implanted profile with Hall mobilities of ∼60 cm2/Vs for annealing at 1300°C for 30 s with an AIN encapsulant layer. This mobility is comparable to epitaxial GaN doped at
a similarly high level. For annealing at ≥1300°C, the sample must be encapsulated with AIN to prevent decomposition of the
GaN layer. Channeling Rutherford backscattering demonstrates the partial removal of the implant damage after a 1400°C anneal
with a minimum channeling yield of 12.6% compared to 38.6% for the as-implanted spectrum. Scanning electron microscope images
show evidence of decomposition of unencapsulated GaN after a 1300°C anneal and complete sublimation after 1400°C. The use
of AIN encapsulation and annealing at temperatures of ∼1300°C will allow the formation of selective areas of highly doped
GaN to reduce the contact and access resistance in GaN-based transistors and thyristors. 相似文献
4.
A monolithic optical/optoelectronic switch for a reconfigurable, parallel optical interconnect is described. By integrating a vertical-cavity surface-emitting laser with a three-terminal GaAs-AlGaAs heterojunction phototransistor, the functions of an optical transceiver and an optical space switch are combined. Switching experiments demonstrate optical/optoelectronic switching and data conversion at 200 Mbit/s 相似文献
5.
Lott J.A. Schneider R.P. Jr. Zolper J.C. Malloy K.J. 《Photonics Technology Letters, IEEE》1993,5(6):631-633
Visible (670-nm) resonant cavity light-emitting diodes (RCLEDs) composed entirely of AlGaInP alloys are discussed. The devices consist of a strained quantum well optical cavity active region surrounded by AlInP/(AlGa)InP distributed Bragg reflectors (DBRs). The bottom DBR is a 60.5 period high reflector while the top partial reflector, which determines the emission linewidth, is a five-period output coupling DBR with a reflectance of about 57%. The devices exhibit linewidths of 4.8 nm (13.3 meV) at 300 K and are promising for plastic fiber communication systems and monochromatic displays 相似文献
6.
Sherwin M.E. Zolper J.C. Baca A.G. Shul R.J. Howard A.J. Rieger D.J. Klem J.F. Hietala V.M. 《Electron Device Letters, IEEE》1994,15(7):242-244
An all implanted self-aligned n-channel JFET fabrication process is described where Zn implantation is used to form the p+ gate region. A refractory metal (W) gate contact is used to allow subsequent high temperature activation of the self-aligned Si source and drain implant. 0.7 μm JFET's have a maximum transconductance of 170 mS/mm with a saturation current of 100 mA/mm at a gate bias of 0.9 V. The p+/n homojunction gate has a turn on voltage of 0.95 V at a current of 1 mA/mm. The drain-source breakdown voltage is 6.5 V. Microwave measurements made at a gate bias of 1 V show an ft of 19 GHz with an fmax of 36 GHz. These devices show promise for incorporation in both DCFL and complementary logic circuits 相似文献
7.
Bo Lu Yin-Chen Lu A.C. Alduino G.G. Ortiz J. Cheng M.J. Hafich J. Klem R.P. Schneider J.C. Zolper 《Photonics Technology Letters, IEEE》1995,7(12):1427-1429
Optically cascadable and multifunctional binary optical switches consisting of AlGaAs-GaAs vertical cavity surface-emitting lasers (VCSELs), heterojunction bipolar transistors (HBTs), and p-i-n photodetectors (PINs) have been realized. Each switching element consists of a pair of PIN/HBT/VCSEL switches that can perform optical switching and routing at a data rate of 100 Mb/s, and optoelectronic signal conversion at a data rate of 100 Mb/s, while achieving a peak dc optical gain of 18 and an ac optical gain of 4. Optically-cascaded, multistage switching operation has been demonstrated using two linear arrays of HBT/PIN/VCSEL switches, with an overall cascaded dc optical gain of 50 and an ac gain of 8. 相似文献
8.
J. C. Zolper M. E. Sherwin A. G. Baca R. P. Schneider 《Journal of Electronic Materials》1995,24(1):21-24
Nitrogen ion implantation is shown to form high resistivity regions (ps ≥ 1 × 1010 Ω/) in C-doped GaAs and Al0.35Ga0.65As that remains compensated after a 900°C anneal. This is in contrast to oxygen or fluorine implantation in C-doped GaAs which
both recover the initial conductivity after a sufficiently high temperature anneal (800°C for F and 900°C for O). In C-doped
Al0.35Ga0.65As N- and O-implant isolation is thermally stable but F-implanted samples regain the initial conductivity after a 700°C anneal.
A dose dependence is observed for the formation of thermally stable N-implant compensation for both the GaAs and AIGaAs samples.
A C-N complex is suggested as the source of the compensating defect level for the N-implanted samples. Sheet resistance data
vs anneal temperature and estimates of the depth of the defect levels are reported. This result will have application to heterojunction
bipolar transistors and complementary heterostructure field effect transistor technologies that employ C-doped AIGaAs or GaAs
layers along with high temperature post-implant isolation processing. 相似文献
9.
10.
Lear K.L. Schneider R.P. Choquette K.D. Kilcoyne S.P. Figiel J.J. Zolper J.C. 《Photonics Technology Letters, IEEE》1994,6(9):1053-1055
Proton implanted, vertical cavity top-surface emitting lasers exhibit the highest single-mode and multi-mode output powers, highest power conversion efficiency, and lowest threshold voltage for such devices reported to date. These lasers use new mirror grading designs that are enabled by metalorganic vapor phase epitaxy's capabilities of alloy grading and carbon doping. The results validate this growth technology by exceeding the previous best results which were based on molecular beam epitaxy 相似文献