Phase Relations in the Pyrochlore-Rich Part of the Bi2O3−TiO2−Nd2O3 System

In this study we used solid-state synthesis to determine the phase relations in the pyrochlore-rich part of the Bi₂O₃−TiO₂−Nd₂O₃ system at 1100°C. The samples were analyzed using X-ray powder diffraction and scanning electron microscopy with energy- and wavelength-dispersive spectroscopy. A single-phase pyrochlore ceramic was obtained with the addition of 4.5 mol% of Nd₂O₃. We determined the solubility limits for the three solid solutions: (i) the pyrochlore solid solution Bi_{(1.6–1.08 x )}Nd _x Ti₂O_{(6.4+0.3 x )}, where 0.25< x <0.96; (ii) the solid solution Bi_{4− x} Nd _x Ti₃O₁₂, where 0< x <2.6; and (iii) the Nd_{2− x} Bi _x Ti₂O₇ solid solution, where 0< x <0.35. The determined phase relations in the pyrochlore-rich part are presented in a partial phase diagram of the Bi₂O₃−TiO₂−Nd₂O₃ system in air at 1100°C.     

Phase equilibrium relations in the binary system Bi2O3-ZnO

Phase equilibria in the binary system Bi₂O₃-ZnO were studied by quenching technique. Heat-treated compositions were subjected to X-ray diffraction for phase identification, and differential thermal analysis, optical and scanning electron microscopy were used to determine the solid-liquid equilibria occurring in this system. The data thus obtained revealed that incorporation of a small amount of ZnO to the high-temperature face-centered cubic lattice of Bi₂O₃ leads to the formation of a body-centered cubic solid solution (-Bi₂O₃), which extends up to a composition of 2.2 mol% ZnO at a temperature near 750°C. On cooling, the -Bi₂O₃ solid solution undergoes a eutectoid transformation at a temperature of 710°C to yield the low-temperature monoclinic polymorph of Bi₂O₃ (-Bi₂O₃) and Bi₃₈ZnO₅₈. The eutectoid occurs at a composition of 1.8 mol% ZnO. The compound Bi₃₈ZnO₅₈ has a crystal structure analogous to the body-centered cubic -Bi₂O₃ solid solution and melts incongruently at a temperature near 753 ± 2°C to yield -Bi₂O₃ and liquid. A binary eutectic occurs between Bi₃₈ZnO₅₈ and ZnO at a composition near 25 ± 1.0 mol% ZnO with a melting temperature of 738 ±2°C. Based on the data obtained in this study, a revised phase diagram of the binary system Bi₂O₃-ZnO is proposed.     

A Compact and Versatile Scanning Tunnelling Microscope with High Energy Resolution for Use in a 3He Cryostat

We present a simple design for a very-low temperature STM for the investigation of mesoscopic superconductors. The nonmagnetic microscope operates in a conventional ³He cryostat at T = 240 mK and in magnetic fields up to B = 1 T. Efficient filtering of all electrical lines at base temperature results in a voltage resolution ≈ 20μ V, which has been tested by measuring the differential conductance of superconducting aluminium. The successful operation in magnetic field is demonstrated by spectroscopy on superconducting aluminium as well as by demonstrating atomic resolution of HOPG.     

Dielectric Properties of Sol–Gel‐Derived Bi12SiO20 Thin Films

In this paper the dielectric properties of crack‐free, Bi₁₂SiO₂₀ thin films were investigated. The films were prepared on Pt/TiO₂/SiO₂/Si and corundum substrates using the sol–gel method. The formation of a pure Bi₁₂SiO₂₀ phase was observed at a temperature of 700°C. The Bi₁₂SiO₂₀ thin films, heat treated at 700°C for 1 h, had a dense microstructure with an average roughness (R_a) of 50 nm. The dielectric properties of the film were characterized by using both low‐ and microwave‐frequency measurement techniques. The low‐frequency measurements were conducted with a parallel capacitor configuration. The dielectric constant and dielectric losses were 44 and 7.5 × 10^?3, respectively. The thin‐film dielectric properties at the microwave frequency were measured using the split‐post, dielectric resonator method (15 GHz) and the planar capacitor configuration (1–5 GHz). The dielectric constant and the dielectric losses measured at 15 GHz were 40 and 17 × 10^?3, respectively, while the dielectric constant and the dielectric losses measured with the planar capacitor configuration were 39 and 65 × 10^?3, respectively.     

The Influence of the Precursor on the Formation of Bi2O3 Polymorphs in CSD‐Derived Thin Films

This work examines the synthesis and characterization of crack‐free, β‐Bi₂O₃ thin films prepared on Pt/TiO₂/SiO₂/Si or corundum substrates using the sol‐gel method. We observed that the Bi‐based precursor has a pronounced influence on the β‐Bi₂O₃ phase formation. Well‐crystallized, single β‐Bi₂O₃ thin films were obtained from Bi‐2ethylhexanoate at a temperature of 400°C. In contrast, thin films deposited from Bi‐nitrate and Bi‐acetate resulted in non‐single Bi₂O₃ phase formation. TEOS was used for the stabilization of the β‐Bi₂O₃ phase. The phase composition of the thin films was characterized by means of X‐ray diffraction (XRD), whereas the morphology and thickness of the thin films were studied using scanning electron microscopy (SEM). The β‐Bi₂O₃ films' dielectric properties were characterized utilizing microwave‐frequency measurement techniques: (1) the split‐post dielectric resonator method (15 GHz) and (2) the planar capacitor configuration (1–5 GHz). The dielectric constant and dielectric loss measured at 15 GHz were 257 and 7.5 × 10^?3, respectively.     

Dielectric Properties of the Bi(1.6−0.8x)YxTi2O(6.4+0.3x) (0.03<x<2) Pyrochlore Solid Solution

We have studied the dielectric properties of a new, cubic pyrochlore-type solid solution Bi_{(1.6−0.8 x )}Y _x Ti₂O_{(6.4+0.3 x )} (0.03< x <2). The single-phase nature of the pyrochlore solid solution was determined using X-ray diffraction and scanning electron microscopy. We found that at room temperature and 1 MHz the pyrochlore solid solution exhibited values of the dielectric constant ɛ between 127 and 64, and low dielectric losses, tan δ, of <6 × 10⁻³. The temperature coefficient of the dielectric constant τ_k is, however, strongly dependent on the composition. Below room temperature dielectric relaxation phenomena were observed for the compositions with low x values.     

The influence of temperature upon the natural static frequencies of saw blades

The purpose of this paper was to judge the influence of temperature of saw blades of a frame sawing machine on the natural static frequencies for axisymetrical saw blade loading of the frame sawing machine. There were four kinds of inside prestressing treatment of saw blades and four various temperature levels.