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电化学脉冲腐蚀法制备窄峰发射的多孔硅微腔 总被引:1,自引:0,他引:1
用电化学脉冲腐蚀方法制备了多孔硅微腔 ,讨论了脉冲电化学腐蚀的参数——周期、占空比对多孔硅多层膜制备的影响 ,并用了以 HF酸扩散为基础的多孔硅动态腐蚀机理对实验结果进行解释 ,认为在用电化学脉冲腐蚀法制备多孔硅微腔的过程中 ,不但要考虑到 HF酸对硅的纵向电流腐蚀 ,也要考虑到 HF酸对多孔硅硅柱的横向浸泡腐蚀 .可通过选取合适的周期、占空比 ,使二者对多孔硅的作用达到适中 ,以制备出高质量的多孔硅多层膜和微腔 .并用正交实验法优化了制备多孔硅微腔的参数 ,根据优化的实验参数 ,制备出了发光峰半峰宽为 6 nm的多孔硅微腔 相似文献
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温度:影响多孔硅光学特性的一个关键参数 总被引:1,自引:1,他引:0
The optical properties of porous silicon(PS) samples fabricated by pulse etching in a temperature range from-40 to 50-C have been investigated using reflectance spectroscopy,photoluminescence spectroscopy,and scanning electron microscopy(SEM).The dependence of the optical parameters,such as the refractive index n and the optical thickness(nd) of PS samples,on the etching temperature has been analyzed in detail.As the etching temperature decreases,n decreases,indicating a higher porosity,and the physical thickness of PS samples also decreases.Meanwhile,the reflectance spectra exhibit a more intense interference band and the interfaces are smoother.In addition,the intensity of the PL emission spectra is dramatically increased. 相似文献
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The surface states of Al0.7Ga0.3As(100) were studied by angle resolved ultraviolet photoelectron spectroscopy. It is first found that there exist two surface states on Al0.7Ga0.3As(100) surface, which can be removed by the adsorption of 1500L hydrogen. The evolution of these two surface states with thermal annealing was investigated. These two surface states were well developed by the annealing at 450℃. The ARUP spectra were measured to study their energy dispersions in k space. These results are discussed and compared with those of the GaAs(100)c(4×2) surface. 相似文献
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