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1.
采用溶胶凝胶方法成功地制备了掺杂稀土铽离子的 Zn O和 Mg0 .1 5Zn0 .85薄膜。通过对 X射线衍射结果的分析表明 ,稀土离子替代了 Zn2 +的格位 ,进入了半导体基质的晶格中。从阴极射线发光结果可以发现 ,在Mg0 .1 5Zn0 .85O基质中 ,可以观察到来源于稀土铽离子各能级的发射 ,而 Zn O:Tb的薄膜只能观察到较强的铽离子 5D4 — 7F5能级的跃迁。这可能是由于 Mg0 .1 5Zn0 .85O基质的能隙 (3 .65 e V)比 Zn O更宽 (3 .3 e V) ,其对铽离子的能量传递更有效的缘故。 相似文献
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刘益春 《新安全 东方消防》2022,(4):9-10
<正>《中华人民共和国国民经济和社会发展第十四个五年规划和2035年远景目标纲要》提出了“创新驱动发展战略”和“建设高质量教育体系”战略任务。习近平总书记强调“发展是第一要务,人才是第一资源,创新是第一动力”。落实国家创新驱动发展战略,关键在于培养造就创新型人才,而创新型人才培养之根本在基础教育,关键在于培养造就数以百万计的骨干教师、数以十万计的卓越教师和数以万计的教育家型教师。 相似文献
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The characteristics of the electricity aad optics have been studied for the polyacenic semiconductor material prepared by pyrolysis of phenolfor-maldehyde resin in this paper. The experimental results indicate that the electrical conductivity of polyacenic material increasses with a rise in pyrolytic temperature(Tp). The sample prepared at 7p=600℃ demonstrated that behavior governed by three-dimension sional-range-hopping (3D-VRH) mechanism at a temperature range of 77-100K. Both 0.052eV and 0.074eV acceptor energy levels (or energy bands) exist in this sample. Raman spectrum demonstrates the increasing of graphitization structure aromatic rings with the rise in pyrolytic temperature, which would increase electrical conductivity. PL spectrum indicates that the pristine polyacenic material can not become a narrow-gap semiconductor even if the electrical conductivity of sample is larger than 101 S·cm-1. 相似文献
4.
Mg_xZn_(1-x)O单晶薄膜和MgZnO/ZnO异质结构的光学性质 总被引:1,自引:0,他引:1
报道了利用等离子辅助分子束外延技术,在蓝宝石c平面上外延生长的Mgx Zn1 - x O单晶薄膜以及Mg Zn O/Zn O异质结构的光学性质.室温下随着Mg浓度增加,合金薄膜样品的发光峰与吸收边均向高能侧移动.研究了样品紫外发光的起因,将Mgx Zn1 - x O合金薄膜的发光归结为束缚激子的复合.在Mg0 .0 8Zn0 .92 O/ Zn O样品中,观察到了分别来自于Zn O层和Mg Zn O盖层的发光和吸收,并将其归因于来自Zn O层的自由激子和Mg Zn O盖层的束缚激子发射 相似文献
5.
在经NH3等离子体氮化的Si(100)衬底上。用等离子体增强化学气相淀积(PECVD)的方法生长了ZnO缓冲层,经X射线衍射(XRD)测量,得到了单一取向的ZnO(0002)膜。在此ZnO缓冲层上利用低压金属有机化学气相淀积(LP-MOCVD)方法生长了较高质量的ZnCdSe/ZnSe量子阱。通过不同阱宽的ZnCdSe/ZnSe量子阱生长和测量,得到了多级共振拉曼峰。从发光谱中可见,在1520nm附近有很强的发光,而在未覆盖ZnO的Si衬底上直接生长的ZnCdSe/ZnSe量子阱结构,其光致发光(PL)谱未见发光。可见,在氮化的Si衬底上覆盖ZnO膜生长的ZnCdSe/ZnSe量子阱质量较好。是一种在Si衬底上生长Ⅱ-Ⅵ族化合物半导体材料的有效方法。 相似文献
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热氧化制备纳米氧化锌薄膜的光致发光和室温紫外激光发射 总被引:8,自引:2,他引:6
利用低压 -金属有机汽相外延 (L P- MOCVD)工艺首先在二氧化硅衬底上生长硫化锌 (Zn S)薄膜 ,然后 ,将硫化锌薄膜在氧气中于不同温度下进行热氧化 ,制备出高质量的纳米氧化锌 (Zn O )薄膜 .X射线衍射 (XRD)结果表明 ,氧化锌具有六角纤锌矿晶体结构 .90 0℃氧化样品的光致发光 (PL )谱中 ,在波长为 3.3e V处观察到一束强紫外光致发光和相当弱的深能级发射 .紫外发光强度与深能级发射强度之比是 80 ,表明纳米 Zn O薄膜的高质量结晶 .在受激发射实验中观察到紫外激光发射 . 相似文献
7.
Er-doped 12CaO·7Al2O3 (C12A7:Er) powders were prepared using the sol-gel method followed by annealing inorganic precursors. X-ray diffraction (XRD), Raman and absorption spectra revealed that Er ions existed and substituted Ca2 lattice site in C12A7. The photoluminescence of C12A7:Er at room temperature was observed in the visible and infrared region using 488 nm (2.54 eV) Ar line as excitation source, respectively. The sharp and intense green emission bands with multi-peaks around 520 nm and 550 nm correspond to the transitions from the excited states 2H11/2 and 4S3/2 to the ground state 4I15/2, respectively. Furthermore, red emission band around 650 nm was also observed. It was attributed to the electronic transition from excited states 4F9/2 to the ground state 4I15/2 inside 4f-shell of Er3 ions. The intensive infrared emission at 1.54μm was attributed to the transition from the first excited states of 4I13/2 to the ground state (4I15/2). The temperature dependent photoluminescence of infrared emission showed that the integrated intensity reached a maximum value at near room temperature. The forbidden transitions of intra-4f shell electrons in free Er3 ions were allowed in C12A7 owing to lack of the inversion symmetry in the Er3 position in C12A7 crystal field. Our results suggested that C12A7:Er was a candidate for applications in Er-doped laser materials, and full color display. 相似文献
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以Zn(C2 H5) 2 和CO2 为反应源 ,在低温下用等离子体增强化学气相沉积方法 ,在Si衬底上外延生长了高质量的ZnO薄膜。用X射线衍射谱和光致发光谱研究了衬底温度对ZnO薄膜质量的影响。X射线衍射结果表明 ,在生长温度为2 3 0℃时制备出了高质量 ( 0 0 0 2 )择优取向的ZnO薄膜 ,其半高宽为 0 2 6°。光致发光谱显示出强的紫外自由激子发射与微弱的与氧空位相关的深缺陷发光 ,表明获得了接近化学配比的ZnO薄膜 相似文献
10.
退火对富硅氮化硅薄膜的结构和发光的影响 总被引:7,自引:3,他引:4
采用等离子体增强化学气相沉积方法(PECVD),在低衬底温度下制备了富硅氮化硅薄膜。利用红外吸收谱(IR)、XPS光电子能谱和光致发光谱(PL),研究了不同的退火温度对薄膜结构和发光的影响。研究发现,薄膜经退火后,在发光谱中出现一强的发光峰。当经过900℃退火后,随着与硅悬键有关的发光峰的消失.该强的主发光峰发生了明显的蓝移,并且有所宽化。蓝移现象源于高温退火后,在薄膜中有小尺寸的Si团簇形成。通过实验结果分析,提出薄膜的发光起因于包埋在氮化硅中的Si团簇。 相似文献