厚度对溶胶-凝胶法制备锂掺杂ZnO薄膜性能的影响

采用溶胶-凝胶旋涂法在玻璃衬底上制备了不同厚度的ZnO:Li半导体薄膜.采用X射线衍射仪和扫描电子显微镜分析了薄膜的物相结构和形貌,用Hall效应测量仪常温下测量薄膜的电学性能.结果表明:该薄膜具有高度的c轴择优取向性,所有薄膜只有1个(002)衍射峰,并且衍射强度随着膜厚增加而加强.ZnO:Li薄膜晶粒呈柱状,晶粒直径不随膜厚改变,约为40 um.ZnO:Li薄膜为P型导电,薄膜越厚,其电学性能与晶体结晶越好,(002)方向择优取向生长越明显.电阻率随着膜厚增加而减小,最小的电阻率为1.32×102(Ω·cm).载流子-空穴浓度为3.546×1016/cm3,迁移率为1.34cm2/(V·s).ZnO:Li薄膜在可见光范围内的透过率达到90%,薄膜对紫外光的吸收与厚度有关.     

特制多孔硅的较低的反射率和较高的少数载流子寿命

Solar cell grade crystalline silicon with very low reflectivity has been obtained by electrochemically selective erosion.The porous silicon（PS） structure with a mixture of nano-and micro-crystals shows good antireflection properties on the surface layer, which has potential for application in commercial silicon photovoltaic devices after optimization.The morphology and reflectivity of the PS layers are easily modulated by controlling the electrochemical formation conditions（i.e., the current density and the anodization time）.It has been shown that much a lower reflectivity of approximately 1.42% in the range 380-1100 nm is realized by using optimized conditions.In addition, the minority carrier lifetime of the PS after removing the phosphorus silicon layer is measured to be ～3.19 μs.These values are very close to the reflectivity and the minority carrier lifetime of Si3N4 as a passivation layer on a bulk silicon-based solar cell（0.33% and 3.03 μs, respectively）.     

硅基纳米结构太阳电池研究新进展

由于原材料蕴藏量非常丰富以及对环境无毒友好的特点,硅基太阳电池不仅在当前,而且在今后都将是光伏太阳电池的主流。传统晶体硅电池光电转换原理决定了其转换效率不可能在短期内有较大提高。基于量子限制原理的纳米结构材料具有独特的性能,能够实现全新结构的超高效率的光伏太阳电池。文章介绍了硅基太阳电池研究方面的一些最新研究进展,并指出了未来一些可能的发展方向。     

新型SINP硅光电池C-V/I-V特性及光谱响应的研究

在p型绒面晶硅上,采用磷的热扩散形成同质pn结、低温热氧化生长超薄SiO_2层、射频磁控溅射沉积ITO减反射/收集电极膜成功制备了一种新型ITO/SiO_2/np晶硅SINP结构光电池.高质量ITO薄膜的物相结构、光学及电学特性通过X-光衍射(XRD)、紫外-可见光透射、吸收谱(UV-VIS)以及霍尔效应(Hall effect)测量系统表征.并对新型SINP光电池C-V/I-V特性及光谱响应进行详细地分析、计算.结果表明,该器件在可见光波段具有光电转换增强的响应,适合于发展成为新型结构的太阳电池及光电探测器.