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Characterization of (100)-orientated diamond film grown by HFCVD method with a positive DC bias voltage 总被引:1,自引:0,他引:1
The (100)-orientated diamond film was deposited by hot-filament chemical vapor deposition (HFCVD) technology with a positive DC bias voltage. The morphology, X-ray diffraction (XRD), RMAN spectrum and dark current versus applied voltage characteristics analysis show that the positive dc bias can increase the nucleation density and (100)-orientated growth, making the growth of the high quality diamond film easier and cheaper than using other methods. 相似文献
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Free-standing diamond films were prepared by hot filament chemical vapor deposition (HFCVD) method under different conditions. Inter-digital transducers (IDTs) were formed on the nucleation sides of free-standing diamond films by photolithography technique. Then piezoelectric ZnO films were deposited by radio-frequency(RF) reactive magnetron sputtering to obtain the ZnO/diamond film structures. Surface morphologies of the nucleation sides and the IDTs were characterized by means of scanning electron microscopy (SEM), atomic force microscope (AFM) and optical microscopy. The results indicate that the surfaces of nucleation sides are very smooth and the IDTs are of high quality without discontinuity and short circuit phenomenon. Raman spectra show the sharp diamond feature peak at about 1 334 cmI and the small amount of non-diamond carbon in the nucleation side. X-ray diffraction (XRD) patterns of the structure of ZnO/diamond films show a strong diffraction peak of ZnO (002), which indicates that as-sputtered ZnO films are highly c-axis oriented. 相似文献
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采用真空热蒸发法在50μm的聚酰亚胺薄膜上蒸镀5μm~8μm的铜层,并用激光掩模打孔法在其上制备了孔径80μm、孔间距285μm的GEM复合薄膜,成功组装了20mm×20mm的GEM探测器。对GEM探测器在55Fe X射线(5.9keV)辐照下进行了脉冲幅度分布谱测试,讨论了漂移区电场、ΔGEM电场、收集区电场对探测器记数的影响。结果表明,随着漂移区电场的增加,计数先增加后减小,在13kV/cm时达到最大值9.7×104。随着ΔGEM电场的增加,记数呈指数增长,最大可达1.2×104。随着收集区电场的增加,计数增大并趋向饱和,最大可达1.3×105。 相似文献
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用射频等离子体化学气相沉积法(RFCVD)和CH4、N2与Ar组成的混合气体制备掺氮类金刚石薄膜(a-C:H:N)。用原子力显微镜(AFM),俄歇电子能谱(AES),红外光谱(IR)以及显微拉曼谱(Micro-Raman)对a-C:H:N薄膜的表面形貌、组分和微观结构进行了表征。实验结果表明,薄膜中有纳米量级的颗粒存在,而且随反应气体中N2与CH4比值的增大,薄膜中氮元素的含量也随之增大,并主要以C-N键和N-H键形式存在,少量以C≡N键形式存在,还研究了热退火对a-C:H:N薄膜的电导率的影响。 相似文献
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纳米金刚石薄膜的光学性能研究 总被引:1,自引:2,他引:1
用热丝化学气相(HFCVD)法在硅衬底上制备了表面光滑、晶粒致密均匀的纳米金刚石薄膜,用扫描电镜(SEM)和原子力显微镜(AFM)观测薄膜的表面形貌和粗糙度,拉曼光谱表征膜层结构,紫外-可见光分光光度计测量其光透过率,并用椭圆偏振仪测试、建模、拟合获得了表征薄膜光学性质的n,k值.结果表明薄膜的晶粒尺寸在100nm以下,表面粗糙度仅为21nm;厚度为3.26(m薄膜在632.8nm波长处的透过率为25%,1100nm波长处达到50%.采用直接光跃迁机制估算得到纳米金刚石薄膜的光学能隙(Eg)为4.3 eV. 相似文献
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通过对四川软玉猫眼进行X射线粉晶衍射(XRD)、傅立叶变换红外光谱(FTIR)分析,结果表明四川软玉猫眼主要由透闪石矿物组成.利用XRD计算的晶胞参数为α0=0.984nm~0.985nm,ь0=1.780nm~1. 782 nm,с0=0.527nm~0.528 nm,β=106.13°~106.35°.傅立叶变换红外谱带中3670cm-1附近的吸收谱带归属透闪石结构中OH伸缩振动的A带.960cm-1~1100cm-1间的谱带归属(Si4O11)的伸缩振动.600cm-1~800cm-1范围内谱带归属uaSi-O-Si振动,400cm-1~600 cm-1范围内的谱带归属(Si4O11)的弯曲振动和Mg-O伸缩振动. 相似文献
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采用不同的沉积条件,通过HFCVD方法制备了四种不同质量、不同取向的CVD金刚石薄膜.讨论了薄膜退火前后的介电性能.研究了不同沉积条件和退火工艺与介电性能之间的联系.通过扫描电镜SEM、Raman光谱、XRD、I-V特性曲线以及阻抗分析仪表征CVD金刚石薄膜的特性.结果表明,退火工艺减少了薄膜吸附的氢杂质,改善了薄膜质量.获得的高质量CVD金刚石薄膜具有好的电学性能,在50V偏压条件下电阻率为1.2×1011Ω·cm,频率在2MHz条件下介电常数为5.73,介电损耗为0.02. 相似文献
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宽禁带半导体金刚石具有许多独特特性,基于此种材料的紫外光探测器能在高温、强腐蚀和强辐射等恶劣环境下工作,成为近年来紫外探测技术研究的重点课题之一。本文综述了CVD金刚石膜紫外光探测器的研究及应用进展。 相似文献
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采用电子辅助-热丝化学气相沉积法(EA-HFCVD)在硅片上沉积出晶粒尺寸为30nm的均匀金刚石膜。生长过程中,预先加6A偏流生长1h,然后在0.8kPa条件下,无偏流生长3h。光致发光谱中存在4个发光中心分别位于1.682eV,1,564eV,1,518eV和1.512eV的发光峰。1.682eV处发光峰源于衬底硅原子掺杂于膜中引起的缺陷;其他发光峰源于金刚石晶格振动声子。光致发光强度越大对应的缺陷密度越大,从而降低了场发射域值电场强度,其关键可能源于金刚石膜电导型晶界。 相似文献