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硅掺杂TiO2纳米管阵列的制备及光电催化活性的研究 总被引:1,自引:0,他引:1
通过电化学沉积,在阳极氧化法制备的高度有序TiO2纳米管阵列表面均匀地沉积Si元素.扫描电子显微照片显示Si掺杂的TiO2纳米管垂直于基底定向生长.X射线衍射分析表明,所引入的Si可能掺入到TiO2的晶格中,因而提高了TiO2的热稳定性,抑制了金红石相的生成及晶粒的长大.紫外-可见漫反射分析表明Si掺杂的TiO2纳米管吸收边带发生了明显的蓝移,并且在紫外区的吸收强度明显增强.与未掺杂的TiO2纳米管相比,Si掺杂TiO2纳米管电极的紫外光电化学响应显著提高,其光电流密度是未掺杂的1.48倍.硅掺杂TiO2纳米管阵列光电催化降解五氯酚的动力学常数(1.651h-1)是未掺杂TiO2纳米管电极(0.823h-1)的2.0倍. 相似文献
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Pulsed discharge plasma has exhibited active potential to prepare low molecular weight chitosan. In the present study, the viscosity of ehitosan solution was decreased noticeably after treated with pulsed corona discharge plasma. An experimental investigation on electrical characteristics of pulsed corona discharge plasma in chitosan solution was conducted with a view toward getting insight into discharge process. Factors affecting I-V curve, single pulse injec- tion energy and pulse width were studied. Experimental results showed positive effect of pulsed peak voltage on discharge plasma in chitosan solution. Pulse-forming capacitor greatly influenced the discharge form, and 4 nF was observed as a suitable value for efficiently generating stable discharge plasmas. As the electrode distance was larger than 10 ram, it had slight impact on dis- charge plasma due to the excellent conductive-property of chitosan solution. The injection energy significantly increased with air flow rate, while the pulse width hardly changed as the air flow rate increased from 0.5 m^3/h to 1.0 m^3/h. This study is expected to provide reference for promoting the application of pulsed corona discharge plasma to ehitosan solution treatment. 相似文献
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