La-Gd-Ca-Mn-O的磁性、电性和磁电阻效应

在La0 67Ca0 33 MnO3 中进行了掺Gd研究 ,结果发现 ,经 140 0℃烧结的样品 ,获得了最佳的磁电阻效应。随掺Gd量增加 ,材料的相变温度逐渐下降 ,对应的峰值电阻率大幅度增加 ,居里温度逐渐下降 ,磁电阻比明显提高。掺入 11%的Gd后 ,可以使磁电阻比提高一个数量级。这些变化可以用晶格效应来解释。     

Substituting Effect of Y in La0.5Ba0.5 CoO3

La0.5-xYxBa0.5CoO3 polycrystals were prepared by solid state reaction. The substituting effects of Y for La on the magnetic and transport properties of the materials were studied systematically. The results indicate that substitution of Y induces two effects. Firstly, the charge transfer from Y to 3d orbital of Co happens. This causes the molecular magnetic moment to decrease. Secondly, the antiferromagnetic exchange interaction of Co ions appears. When the content of Y is less than or equal to 30%, the non-colinear structure of spins in materials is observed. When the content of Y is greater than 30%, the materials transit from predominant ferromagnetic state to predominant antiferromagnetic one. The conductive mechanism for the materials with different content of Y belongs to the variable range hopping conduction of polarons.The resistivity of materials increases sharply with increasing Y content.     

La0.5-xCexBa0.5CoO3化合物的磁性和输运特性

在La0.5Ba0.5CoO3中,系统研究了Ce对La的替代效应.Ce的掺入首先产生了电荷转移效应.材料高温磁化率测量表明,每个Ce原子向Co的3d壳层转移2.86个电子,结果随Ce掺入量增加,材料磁矩成线性下降.另外,随Ce含量增加,材料居里温度单调下降,这是由于稀土离子的尺寸效应.在所研究的温度范围内,所有材料的导电机理都属于极化子的变程跳跃导电.由于电荷转移效应,使材料电阻率随Ce掺入量增加而迅速加大.当La全部被Ce替代后,室温下材料的电阻率提高了五个数量级以上.     

La-Gd-Ca-Mn-O的不可逆磁电阻效应

随掺Gd量的增加，La-Gd-Ca-Mn-O化合物的金属-绝缘体相变温度逐渐下降，对应的峰值电阻率大幅度增加，磁电阻比明显提高，掺入11%的Gd可以使材料的磁电阻比提高一个数量级。Gd的掺入还引起材料磁电阻出现明显的不可逆效应。随掺Gd量增加，不可逆效应明显增大。     

Lattice Effects in La-Sm-Ca-Mn-O

The doping effects of Sm in La0.67Ca0.33MnO3 oxide were studied. The results show that with increasing the doping amount of Sm the phase transition temperature of metal-insulator for the materials decreases monotonically, the cor-responding peak resistance increases rapidly, the Curie temperature decreases monotonically, and the magneto-resistance ratio increases quickly. The effects of Sm doping can be explained in terms of lattice effects.