Mn0.43Ni0.9CuFe0.67O4 NTC热敏材料的Pechini法制备

为制备材料常数(B值)1900K左右宽温区NTC热敏电阻, 将Pechini方法制备的Mn_0.43Ni_0.9CuFe_0.67O₄ 粉体置于2.45GHz多模腔微波炉中,经不同温度下微波煅烧压制成型后,于1000℃下微波烧结.采用红外(FT-IR),X射线衍射（XRD）,扫描电镜（SEM）,粒度分析分别对样品的晶体结构、相组成、形貌和粒度分布进行了表征.结果表明,不同煅烧和烧结工艺对元件的电学性能有很大的影响;微波最佳煅烧温度为650℃,比常规煅烧所需温度低;微波烧结能够获得微观结构均匀致密的陶瓷体;微波烧结制得元件的B值和电阻率均匀性较好,其B值平均值为1930K,偏差为0.31%,电阻率ρ的平均值为135Ω·cm,偏差为4.55%;而常规烧结制得元件的B值平均值为1720K,偏差为1.47%,电阻率ρ的平均值为78Ω·cm,偏差为25.34%.复阻抗分析表明,微波烧结后样品的晶粒电阻R_b和晶界电阻R_gb分别为255和305Ω,而常规烧结样品的晶粒和晶界电阻分别为200和230Ω.     

Effects of growth temperature on high-quality In0.2Ga0.8N layers by plasma-assisted molecular beam epitaxy

High-quality In_0.2Ga_0.8N epilayers were grown on a GaN template at temperatures of 520 and 580℃ via plasma-assisted molecular beam epitaxy. The X-ray rocking curve full widths at half maximum (FWHM) of (10.2) reflections is 936 arcsec for the 50-nm-thick InGaN layers at the lower temperature. When the growth temperature increases to 580℃, the FWHM of (00.2) reflections for these samples is very narrow and keeps similar, while significant improvement of (10.2) reflections with an FWHM value of 612 arcsec has been observed. This improved quality in InGaN layers grown at 580℃ is also reflected by the much larger size of the crystalline column from the AFM results, stronger emission intensity as well as a decreased FWHM of room temperature PL from 136 to 93.9 meV.     

Co0.8Mn0.8Ni0.9Fe0.5O4 纳米粉体的制备及热敏特性研究

采用共沉淀法,以NH4HCO3为沉淀剂制备了Co0.8Mn0.8Ni0.9Fe0.5O4负温度系数(NTC)热敏电阻纳米粉体材料,研究了不同预烧温度对材料相结构的影响,探讨了不同烧结工艺对NTC热敏电阻材料微观结构和热敏性能的影响. 采用X射线衍射(XRD)、综合热分析(TG/DTA)、红外(FT-IR)、扫描电子显微技术(SEM)和激光粒度分析仪对制备的样品进行了表征. 结果表明,750℃预烧后的粉体为纯尖晶石相,晶粒粒度为32.1nm,颗粒粒径在50～100nm范围内. 通过对不同烧结程序的对比研究发现,当烧结程序为:840℃、1200℃各保温2h,升降温速率为1℃/min时,样品电学性能较好:ρ25℃=1183Ω*cm,B25/50=3034K. 分析表明,该烧结程序能有效改善热敏电阻材料的微观结构和热敏性能. 根据ln ρ-1/T曲线斜率计算了经不同工艺烧结后热敏电阻材料的激活能在0.26eV左右.     

Effects of growth temperature on high-quality In_(0.2)Ga_(0.8)N layers by plasma-assisted molecular beam epitaxy

正High-quality In_(0.2)Ga_(0.8)N epilayers were grown on a GaN template at temperatures of 520 and 580℃via plasma-assisted molecular beam epitaxy.The X-ray rocking curve full widths at half maximum(FWHM) of(10.2) reflections is 936 arcsec for the 50-nm-thick InGaN layers at the lower temperature.When the growth temperature increases to 580℃,the FWHM of(00.2) reflections for these samples is very narrow and keeps similar,while significant improvement of(10.2) reflections with an FWHM value of 612 arcsec has been observed.This improved quality in InGaN layers grown at 580℃is also reflected by the much larger size of the crystalline column from the AFM results,stronger emission intensity as well as a decreased FWHM of room temperature PL from 136 to 93.9 meV.     

MnNiCuFe系材料的聚合络合法制备及微波烧结

为了得到低B值(2100K)、高精度互换、均匀性好的NTC热敏电阻器,采用聚合络合法制备了Mn0.43Ni0.90CuFe0.67O4 NTC热敏材料的前驱体,在500℃进行热分解后获得氧化物,经不同温度微波煅烧,确定最佳温度后成型,分别进行微波烧结与常规烧结。采用TGA-DTA、FT-IR、XRD、粒度分析及SEM等手段,对材料进行表征。结果表明:微波煅烧最佳温度为650℃,陶瓷体由缺铜相和富铜相两相组成;微波烧结大大提高了元件的均匀性,成品率由常规烧结的30%提高至85%。     

Mn0.43Ni0.9CuFe0.67O4 NTC热敏材料的Pechini法制备及微波烧结特性研究

为制备材料常数(B值)1900K左右宽温区NTC热敏电阻,将Pechini方法制备的Mn0.43Ni0.9CuFe0.67O4粉体置于2.45GHz多模腔微波炉中,经不同温度下微波煅烧压制成型后,于1000℃下微波烧结.采用红外(FT-IR),X射线衍射(XRD),扫描电镜(SEM),粒度分析分别对样品的晶体结构、相组成、形貌和粒度分布进行了表征.结果表明,不同煅烧和烧结工艺对元件的电学性能有很大的影响;微波最佳煅烧温度为650℃,比常规煅烧所需温度低;微波烧结能够获得微观结构均匀致密的陶瓷体;微波烧结制得元件的B值和电阻率均匀性较好,其B值平均值为1930K,偏差为0.31%,电阻率ρ的平均值为135Ω*cm,偏差为4.55%;而常规烧结制得元件的B值平均值为1720K,偏差为1.47%,电阻率ρ的平均值为78Ω*cm,偏差为25.34%.复阻抗分析表明,微波烧结后样品的晶粒电阻Rb和晶界电阻Rgb分别为255和305Ω,而常规烧结样品的晶粒和晶界电阻分别为200和230Ω.