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通过改变氧分压,利用脉冲激光沉积方法在Si(100)衬底上制备了系列LaNiO3导电氧化物薄膜;经XRD测试研究发现,通过调控氧压,可获得具有高(100)取向薄膜,且氧压对薄膜结晶性有很大影响,在氧分压为7.5Pa时获得结晶性最好的薄膜。经XRF分析表明,La、Ni元素化学成分计量比随氧压增大而减小。经四探针法测试,薄膜电阻率最小为2.03×10-4Ω.cm,表现出了良好的金属导电性。经SEM和AFM分析表明,薄膜晶粒为柱状晶,排列均匀致密,薄膜表面均匀,粗糙度较小,表明LaNiO3薄膜可以用作一种良好的铁电薄膜底电极材料。 相似文献
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La2/3Sr1/3MnO3 films with(110) preferred orientation were deposited on Si(100) substrate without any buffer layer by pulsed laser deposition technique.Effect of oxygen pressure on orientation,surface morphology,and electrical transport properties were investigated.The film deposited at 10 Pa presented(110) preferred orientation with the best crystalline quality,the largest grain size,and the smallest roughness.The(110) oriented film presented higher metal-insulator transition temperature,and the lower resistivity than that of the samples without preferred orientation. 相似文献
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The Ba-, La- and Ag-doped polycrystalline Ca2.9M0.1Co4O9 (M=Ca, Ba, La, Ag) thermoelectric bulk samples were prepared via citrate acid sol-gel synthesis method followed by spark plasma sintering technique. The bulk samples were characterized and analyzed with regard to their phase compositions, grain orientations as well as microstructures. The high temperature thermoelectric transport properties of the bulk samples were studied in detail. All bulk samples were found to be single-phased with modified body texture. The electrical resistivity was modulated as a result of carrier concentration modification, however the carrier transport process was not influenced; the Seebeck coefficient was deteriorated simultaneously. The total thermal conductivity was remarkably reduced, on account of the decreasing of phonon thermal conductivity. The thermoelectric properties of the Ba-, La-, and Ag-doped bulk samples were optimized, and the Ba-doped Ca2.9Ba0.1Co4O9 system was found to have the highest dimensionless figure of merit ZT0.20 at 973K, which was remarkably higher than that of the un-doped sample. 相似文献
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用脉冲激光沉积法在Si(100)衬底上制备了(110)择优取向的La2/3Sr1/3MnO3薄膜,研究了环境氧压对薄膜结晶度、取向、表面形貌和微结构的影响。结果表明:10Pa氧压下沉积的薄膜具有高结晶度的(110)择优取向,晶粒分布均匀,晶粒分布均匀,表面均方根粗糙度Rrms为1.35 nm。与无明显择优取向的薄膜相比,(110)择优取向的La2/3Sr1/3MnO3薄膜具有较高的饱和磁化强度(Ms)、金属-绝缘体相变温度(TM-I)和较低的电阻率(ρ)。 相似文献
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使用脉冲激光沉积技术,在(001)取向的LaAlO3(LAO)单晶基片上外延生长了BaTiO3/La2/3Sr1/3MnO3(BTO/LSMO)双层复合薄膜.电学和磁学性能的研究显示复合薄膜具有较低的相对介电常数(εr=263),优良的铁电和铁磁性能以及高于室温的铁磁居里温度(Tc=317 K).复合薄膜的磁电电压系数(αE)为176 mV/A,高于同类结构磁电系统一个数量级,相应的界面耦合系数k值为0.68,表明铁磁层和铁电层界面之间存在较大程度的耦合. 相似文献
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