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The degradation of MOSFETs under high field stress has been investigated for a long time. The degradation is due to the newly generated traps. As the gate thickness scaled down rapidly, a conventional method for detecting oxide traps, such as C-V or subthreshold swing, is no longer effective. Some new phenomena also appear, such as Stress Induced Leakage Current (SILC) and soft-breakdown. The oxide traps' behavior and their characteristics are the key problems in the study of degradation. By extracting the change of transition coefficients from the I-V curve and using the PDO (Proportional Differential Operator) method, various oxide traps can be distinguished and as would be helpful in the determination of trap behavior changes during the degradation process. 相似文献
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静态随机同步存储器(SRAM)灵敏放大器(SA)广泛用于深亚微米芯片存储系统的设计,用来提高存储系统的速度和降低存储系统功耗。提出一种由作者设计的新型灵敏放大器,能够在满足功耗、速度、面积的基础上降低失配。首先介绍失配对锁存型灵敏放大器性能的影响,然后介绍两种常用的改进方法,最后重点介绍由作者设计的时序改进型的SA,并对结构改进前后的仿真数据进行比较,且与以往的两种结构进行比较。 相似文献
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提出了一种考虑量子效应的短沟道沟道表面电势数值模型,并在此基础上分析了源漏偏压对表面势分布的影响.计算结果和二维量子力学数值模拟结果很好地吻合.结果表明:源漏偏压会造成线性区的沟道表面势减小,进而导致阈值电压下跌;而在饱和区,源漏偏压的影响更大,会造成表面势明显下降,阈值下跌将会更加严重. 相似文献
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