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由于一维纳米材料在发光等领域的巨大的应用潜力,近年来对纳米材料的研究也成为热点。ZnO作为一种宽带隙半导体材料,其纳米结构的研究受到了广泛关注。本文对自组装ZnO孪晶纳米结构进行了系统的透射电镜(TEM)研究。图1a为ZnO纳米结构的低倍TEM像,表明该纳米结构由三个成份A,B,C组成。  相似文献   
2.
以乙酸锌为锌源, Na2SeO3•5H2O或Se粉为硒源, 采用溶剂热法在乙醇胺(EA)溶剂中一步合成晶型和形貌可控的闪锌矿和纤锌矿结构的ZnSe纳米材料。利用X射线衍射(XRD)、能量色散X射线谱 (EDS)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)对产物的晶型、成分和形貌进行了表征。结果表明, Se源的选取直接决定了ZnSe纳米材料的晶型和形貌: 以Na2SeO3•5H2O为源, 产物为立方相闪锌矿结构的ZnSe纳米颗粒, 直径30 nm左右; 以Se粉为源, 产物为六方相纤锌矿结构的ZnSe纳米片, 厚度约50 nm。进一步的研究表明, 具有合适配位能力的乙醇胺溶剂和Se源对ZnSe纳米结构的合成起重要作用。通过紫外-可见光谱(UV-Vis)和室温光致发光光谱(PL)表征了产物的光学性质。  相似文献   
3.
Sn-doped CdTe polycrystalline films were successfully deposited on ITO glass substrates by close space sublimation. The effects of Sn-doping on the microstructure, surface morphology, and optical properties of polycrys- talline films were studied using X-ray diffraction, scanning electron microscopy, and ultraviolet-visible spectrophotometry, respectively. The results show that the lower molar ratio of Sn and CdTe conduces to a strongly preferential orientation of (111) in films and a larger grain size, which indicates that the crystallinity of films can be improved by appropriate Sn-doping. As the molar ratio of Sn and CdTe increases, the preferential orientation of (111) in films becomes weaker, the grain size becomes smaller, and the crystal boundary becomes indistinct, which indicates that the crystallization growth of films is incomplete. However, as the Sn content increases, optical absorption becomes stronger in the visible region. In summary, a strongly preferential orientation of (111) in films and a larger grain size can be obtained by appropriate Sn-doping (molar ratio of Sn : CdTe = 0.06 : 1), while the film retains a relatively high optical absorption in the visible region. However, Sn-doping has no obvious influence on the energy gap of CdTe films.  相似文献   
4.
以硫粉(S)、氧化镉(CdO)和六水氯化铬(CrCl3·6H2O)为原料,用溶剂热法成功地合成了增强铁磁性能铬掺杂CdS纳米棒.X射线衍射(XRD)测试表明Cr掺杂CdS纳米棒为纤锌矿结构.透射电镜(TEM)表征不同Cr掺杂CdS的形貌为纳米棒,纳米棒长为200~300nm,直径为50~70nm.电子能量散射谱(EDS)表明产物由Cr、Cd、S三种元素组成.振动样品磁强计(VSM)测试表明未掺杂的CdS为弱铁磁性,然而Cr掺杂CdS为强铁磁性,Cr掺杂量在x=0.0000到x=0.0727范围内,饱和磁化强度随掺杂量的增加而增加,Cd1-xCrxS(x=0.0727)纳米棒的饱和磁化强度为8.884(10emu/g).  相似文献   
5.
系统研究了Al和Ni/Al两种金属体系在重掺杂p型SiC晶片上的欧姆接触特性和电学性质。利用X射线衍射、扫描电子显微镜和综合物性测量系统对这两种电极表面的微观结构和样品的电学性质进行了表征。结果表明:在真空环境下经过800℃退火后Al电极可呈现出欧姆接触行为,其比接触电阻率为1.98×10-3Ω·cm2,退火处理后Al电极与SiC在接触界面形成化合物Al4C3,有助于提高接触界面稳定性。在Ni/Al复合体系中,当Ni金属层厚度为50 nm时,其比接触电阻率显著降低至4.013×10-4Ω·cm2。退火后Ni与SiC在接触界面生成的Ni2Si有利于欧姆接触的形成和降低比接触电阻率。研究结果可为开发液相法生长的p型SiC晶片电子器件提供参考。  相似文献   
6.
采用近距离升华法(Close-Spaced-Sublimation,CSS)引入Bi催化剂成功制备出了具有纳米线、近阵列排布的纳米棒等形貌的纳米晶CdTe薄膜.并利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外可见分光光度计等研究了薄膜的结构、表面形貌和光学性能.讨论了CdTe纳米结构可能的生长机制.
Abstract:
Bi-catalyzed nanocrystalline CdTe films were prepared by close spaced sublimation (CSS) technique successfully.These nanocrystalline CdTe films had surface appearance of nanowires or a similar array arrangement nanorod.The structure,the surface topograph and the optical properties of these films were studied using X-ray diffraction(XRD),scanning electron microscopy(SEM) and ultroviolet-visible (UV-VIS) spectrophotometer.And the possible growth mechanisms of these nanostructures were discussed.  相似文献   
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