联盟标准CSA016《LED照明应用接口要求：控制装置分离式、自带散热LED模组的路加隧道灯》解读

With the advantages of long lifetime, high lighting effect and non-pollution, LED lighting has taken a leading role in the lighting sector. LED street and tunnel lights have no unified product interface, so the products of different enterprises cannot interchange with each other, restraining the development of the whole industry due to the large-scale production problem. The alliance standard CSA 016-2013 has been approved as a national standard project, paving the way for the orderly development of LED industry. Interpreting the CSA 016 standard, the paper expounds on the technical requirements for interchangeable interface in the optical, mechanical, electrical and thermal aspects.     

MEMS光敏BCB硅—硅键合工艺研究

光敏BCB作为粘结介质进行键合工艺实验研究。实验中选用XUS35078负性光敏BCB,提出了优化的光刻工艺参数,得到了所需要的BCB图形层,然后将两硅片在特定的温度与压力条件下完成了BCB键合。测试表明:该光敏BCB具有较小的流动性和较低的塌陷率。键合后的BCB胶厚约为11.6μm,剪切强度为18MPa,He细检漏率小于5.0×10-8atm·cm3/s。此键合工艺可应用于制作需要低温工艺且不能承受高电压的MEMS器件。     

联盟标准CSA 016《LED照明应用接口要求:控制装置分离式、自带散热LED模组的路灯/隧道灯》解读（英文）

With the advantages of long lifetime, high lighting effect and non-pollution, LED lighting has taken a leading role in the lighting sector. LED street and tunnel lights have no unified product interface, so the products of different enterprises cannot interchange with each other, restraining the development of the whole industry due to the large-scale production problem. The alliance standard CSA 016-2013 has been approved as a national standard project, paving the way for the orderly development of LED industry. Interpreting the CSA 016 standard, the paper expounds on the technical requirements for interchangeable interface in the optical, mechanical, electrical and thermal aspects.     

初始层生长条件和Mg活性剂对MOVPE方法生长GaN薄膜质量的影响

The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high Ⅴ/Ⅲ ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode.