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Si(001) surface is a more important surface for pratical application, but the study of metal-semiconductor interfaces on this surface is much less than on Si (111) surface. In this paper, the initial formation of the Ag/Si (001) interface is investigated by LEED, AES and UPS using He lamp. Results on room temperature adsorption of Ag on Si(001)(2×1) surface show a LEED pattern unchanged from the clean surface until gradual blurring. Being relative to the pure metal Ag, a shift and the shape of the 4d peak of Ag apprpted on Si (001) indicate that Ag/Si(001) is consistent with 2D island formation. With iacreasing coverage, the 4d peak shifts toward E while the second peak develops and thus intermixing Ag and Si atoms are formed. 相似文献
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在Si(100)2×1再构面上蒸发银,除了得到Ag(111)1×1结构外,还发现了Ag(111)3×1再构,LEED和UPS分析表明界面上可能存在银原子与硅衬底的相互作用。 相似文献
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